BF995

BF995 Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially for FM- and VHF TV-tuners up to 300 MHz. Features D Integrated gate protection diodes D High cross modulation performance D Low noise figure 2 1 D High AGC-range D Low feedback capacitance G2 G1 D 94 9279 13 579 3 4 12623 BF995 Marking: MB Plastic case (SOT 143) 1=Source, 2=Drain, 3=Gate 2, 4=Gate 1 S Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Total power dissipation Channel temperature Storage temperature range Test Conditions Type Symbol Value VDS 20 ID 30 ±IG1/G2SM 10 Ptot 200 TCh 150 Tstg –55 to +150 Unit V mA mA mW °C °C Tamb ≤ 60 °C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthChA Value 450 Unit K/W Document Number 85009 Rev. 3, 20-Jan-99 www.vishay.de • FaxBack +1-408-970-5600 1 (7) BF995 Vishay Telefunken Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Drain - source breakdown voltage Gate 1 - source breakdown voltage Gate 2 - source breakdown voltage Gate 1 - source leakage current Gate 2 - source leakage current Drain current Test Conditions ID = 10 mA, –VG1S = –VG2S = 4 V ±IG1S = 10 mA, VG2S = VDS = 0 ±IG2S = 10 mA, VG1S = VDS = 0 ±VG1S = 5 V, VG2S = VDS = 0 ±VG2S = 5 V, VG1S = VDS = 0 VDS = 15 V, VG1S = 0, VG2S = 4 V BF995 BF995A BF995B Type Symbol V(BR)DS ±V(BR)G1SS ±V(BR)G2SS ±IG1SS ±IG2SS IDSS IDSS IDSS –VG1S(OFF) –VG2S(OFF) 4 4 9.5 Min 20 8 8 Typ Max Unit V V V nA nA mA mA mA V V 14 14 100 100 18 10.5 18 3.5 3.5 Gate 1 - source cut-off voltage Gate 2 - source cut-off voltage VDS = 15 V, VG2S = 4 V, ID = 20 mA VDS = 15 V, VG1S = 0, ID = 20 mA Electrical AC Characteristics VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz , Tamb = 25_C, unless otherwise specified Parameter Forward transadmittance Gate 1 input capacitance Gate 2 input capacitance Feedback capacitance Output capacitance Power gain AGC range Noise figure Test Conditions Symbol y21s Cissg1 Cissg2 Crss Coss Gps DGps F Min 12 Typ 15 3.7 1.6 25 1.6 20 50 1.8 Max Unit mS pF pF fF pF dB dB dB VG1S = 0, VG2S = 4 V GS = 2 mS, GL = 0.5 mS, f = 200 MHz VG2S = 4 to –2 V, f = 200 MHz GS = 2 mS, GL = 0.5 mS, f = 200 MHz 2.5 www.vishay.de • FaxBack +1-408-970-5600 2 (7) Document Number 85009 Rev. 3, 20-Jan-99 BF995 Vishay Telefunken Typical Characteristics (Tamb = 25_C unless otherwise specified) Y21S – Forward Transadmittance ( mS ) 300 P tot – Total Power Dissipation ( mW ) 250 200 150 100 50 0 0 96 12159 22 20 18 16 14 12 10 8 6 4 2 0V 4V 3V 2V 1V VDS=15V f=1MHz VG2S=5V 20 40 60 80 100 120 140 160 96 12162 0 –2.0–1.5–1.0–0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VG1S – Gate 1 Source Voltage ( V ) Tamb – Ambient Temperature ( °C ) Figure 1. Total Power Dissipation vs. Ambient Temperature 22 20 18 ID – Drain Current ( mA ) 16 14 12 10 8 6 4 2 0 0 96 12160 Figure 4. Forward Transadmittance vs. Gate 1 Source Voltage 4.0 C issg1 – Gate 1 Input Capacitance ( pF ) VG1S= 0.6V 0.4V 0.2V 0 –0.2V –0.4V –0.6V –0.8V 2 4 6 8 10 12 14 16 18 20 22 24 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 –2.0 –1.5 –1.0 –0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VG1S – Gate 1 Source Voltage ( V ) VDS=15V VG2S=4V f=1MHz VDS – Drain Source Voltage ( V ) 96 12163 Figure 2. Drain Current vs. Drain Source Voltage 24 22 20 18 16 14 12 10 8 6 4 2 0 –2 96 12161 Figure 5. Gate 1 Input Capacitance vs. Gate 1 Source Voltage 4.0 C issg2 – Gate 2 Input Capacitance ( pF ) Y21S – Forward Transadmittance ( mS ) VDS=15V IDS=10mA 3.6 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 –2 –1 0 1 2 3 VG1S=0.5V 0V VDS=15V VG1S=0 f=1MHz –0.5V –1 0 1 2 3 4 5 6 96 12164 4 5 6 7 VG2S – Gate 2 Source Voltage ( V ) VG2S – Gate 2 Source Voltage ( V ) Figure 3. Forward Transadmittance vs. Gate 2 Source Voltage Figure 6. Gate 2 Input Capacitance vs. Gate 2 Source Voltage Document Number 85009 Rev. 3, 20-Jan-99 www.vishay.de • FaxBack +1-408-970-5600 3 (7) BF995 Vishay Telefunken 3.0 C oss – Output Capacitance ( pF ) 2.5 2.0 1.5 1.0 0.5 0 0 96 12165 10 VG2S=4V f=1MHz 5 0 Im ( y ) ( mS ) 21 –5 –10 –15 –20 –25 700MHz –30 2 4 6 8 10 12 14 16 18 20 22 96 12167 VDS=15V VG2S=4V f=50...700MHz ID=5mA 10mA 20mA f=50MHz 100MHz 200MHz 300MHz 400MHz 500MHz 600MHz 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 Re (y21) ( mS ) VDS – Drain Source Voltage ( V ) Figure 7. Output Capacitance vs. Drain Source Voltage 18 16 14 Im ( y ) ( mS ) 11 12 10 8 6 4 2 0 0 96 12166 Figure 9. Short Circuit Forward Transfer Admittance 7.0 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 96 12168 f=700MHz 600MHz 500MHz 400MHz 300MHz 200MHz 100MHz 0.2 0.4 0.6 ID=20mA VDS=15V VG2S=4V ID=5...20mA f=50...700MHz 0.8 1.0 1.2 1.4 f=700MHz 600MHz 500MHz 400MHz 300MHz 200MHz 100MHz 1 2 3 4 5 VDS=15V VG2S=4V ID=5...20mA f=50...700MHz 6 7 8 9 10 Im ( y ) ( mS ) 22 ID=5mA Re (y11) ( mS ) Re (y22) ( mS ) Figure 8. Short Circuit Input Admittance Figure 10. Short Circuit Output Admittance www.vishay.de • FaxBack +1-408-970-5600 4 (7) Document Number 85009 Rev. 3, 20-Jan-99 BF995 Vishay Telefunken VDS = 15 V, ID = 5 to 20 mA, VG2S = 4 V , Z0 = 50 W S11 j 120° j0.5 j2 150° j0.2 j5 300 30° S12 90° 60° 0 0.2 0.5 1 2 5 100 50 1 600 180° 700MHz 0.04 0.08 0° –j0.2 12 920 S21 120° 90° 60° –150° ID= 20mA 10mA –30° 5mA –30° –j0.2 –120° 12 922 –90° –60° 12 923 Figure 12. Forward transmission coefficient Document Number 85009 Rev. 3, 20-Jan-99 ÁÁÁÁÁÁÁÁÁÁ ÁÁ 180° ÁÁÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁÁÁ Á 700 MHz 500 300 –j0.5 –j –j2 –j5 –150° –30° –120° 12 921 –90° –60° Figure 11. Input reflection coefficient Figure 13. Reverse transmission coefficient S22 j j0.5 30° j0.2 700MHz 0.8 1.6 0° 0 0.2 0.5 1 2 5 100 j5 j2 400 200 50 1 300 500 –j5 700 MHz –j0.5 –j –j2 Figure 14. Output reflection coefficient www.vishay.de • FaxBack +1-408-970-5600 5 (7) BF995 Vishay Telefunken Dimensions in mm 96 12240 www.vishay.de • FaxBack +1-408-970-5600 6 (7) Document Number 85009 Rev. 3, 20-Jan-99 BF995 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 85009 Rev. 3, 20-Jan-99 www.vishay.de • FaxBack +1-408-970-5600 7 (7)