BFP193TRW

Not for new design, this product will be obsoleted soon BFP193T / BFP193TW / BFP193TRW Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 SOT-143 Features • • • • • Low noise figure High transition frequency fT = 8 GHz e3 Excellent large signal behaviour Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 2 4 1 SOT-343 Applications For low noise and high gain applications such as power amplifiers up to 2 GHz and for linear broadband amplifiers. 3 1 4 2 SOT-343R Mechanical Data Typ: BFP193T Case: SOT-143 Plastic case Weight: approx. 8.0 mg Marking: 193 Pinning: 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter Typ: BFP193TW Case: SOT-343 Plastic case Weight: approx. 6.0 mg Marking: W19 4 3 18383 Electrostatic sensitive device. Observe precautions for handling. Pinning: 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter Typ: BFP193TRW Case: SOT-343R Plastic case Weight: approx. 6.0 mg Marking: W91 Pinning: 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Tamb ≤ 45 °C Test condition Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 20 12 2 80 420 150 - 65 to + 150 Unit V V V mA mW °C °C Document Number 85015 Rev. 1.3, 05-Sep-08 www.vishay.com 1 BFP193T / BFP193TW / BFP193TRW Vishay Semiconductors Maximum Thermal Resistance Parameter Junction ambient 1) 1) Test condition Symbol RthJA Value 250 Unit K/W on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 μm Cu Electrical DC Characteristics Tamb = 25 °C, unless otherwise specified Parameter Collector-emitter cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltage Test condition VCE = 20 V, VBE = 0 VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 IC = 1 mA, IB = 0 IC = 50 mA, IB = 5 mA Symbol ICES ICBO IEBO V(BR)CEO VCEsat hFE 50 12 0.1 100 0.5 150 Min Typ. Max 100 100 1 Unit μA nA μA V V DC forward current transfer ratio VCE = 8 V, IC = 30 mA www.vishay.com 2 Document Number 85015 Rev. 1.3, 05-Sep-08 BFP193T / BFP193TW / BFP193TRW Vishay Semiconductors Electrical AC Characteristics Tamb = 25 °C, unless otherwise specified Parameter Transition frequency Collector-base capacitance Collector-emitter capacitance Emitter-base capacitance Noise figure Test condition VCE = 8 V, IC = 50 mA, f = 1 GHz VCB = 10 V, f = 1 MHz VCE = 10 V, f = 1 MHz VEB = 0.5 V, f = 1 MHz VCE = 8 V, IC = 10 mA, ZS = ZSopt, ZL = 50 Ω, f = 900 MHz VCE = 8 V, IC = 10 mA, ZS = ZSopt, ZL = 50 Ω, f = 2 GHz Power gain VCE = 8 V, IC = 30 mA, ZS = ZSopt, ZL = 50 Ω, f = 900 MHz VCE = 8 V, IC = 30 mA, ZS = ZSopt, ZL = 50 Ω, f = 2 GHz Transducer gain VCE = 8 V, IC = 30 mA, Z0 = 50 Ω, f = 900 MHz VCE = 8 V, IC = 30 mA, Z0 = 50 Ω, f = 2 GHz Third order intercept point at output VCE = 8 V, IC = 50 mA, f = 900 MHz Symbol fT Ccb Cce Ceb F Min 6 Typ. 8 0.5 0.25 1.6 1.2 0.9 Max Unit GHz pF pF pF dB F 2.1 dB Gpe 18 dB Gpe 12 dB |S21e|2 |S21e|2 IP3 15 9 33 dB dB dBm Package Dimensions in mm 0.1 [0.004] max. 1.1 [0.043] 2.6 [0.102] 2.35 [0.093] 1.8 [0.071] 1.6 [0.063] 0.5 [0.020] 0.35 [0.014] 0.9 [0.035] 0.75 [0.030] foot print recommendation: 3 [0.118] 2.8 [0.110] 0.5 [0.020] 0.35 [0.014] 0.5 [0.020] 0.35 [0.014] 0.15 [0.006] 0.08 [0.003] 1.7 [0.067] 0.9 [0.035] 0.9 [0.035] 0.8 [0.031] 1.2 [0.047] 1.4 [0.055] 1.2 [0.047] 0.9 [0.035] 0.8 [0.031] 2 [0.079] 2 [0.079] 1.8 [0.071] 0.8 [0.031] 1.9 [0.075] 96 12240 Document Number 85015 Rev. 1.3, 05-Sep-08 www.vishay.com 3 BFP193T / BFP193TW / BFP193TRW Vishay Semiconductors Package Dimensions in mm 0.1 [0.004] max. 0.2 [0.008] 0.1 [0.004] 2.2 [0.087] 1.8 [0.071] 0.4 [0.016] 0.25 [0.010] 0.4 [0.016] 0.25 [0.010] 0.15 [0.006] min. 2.2 [0.087] 2 [0.079] 1.25 [0.049] 1.05 [0.041] 0.4 [0.016] 0.25 [0.010] 0.7 [0.028] 0.55 [0.022] foot print recommendation: 1.15 [0.045] 0.09 [0.035] 0.6 [0.024] 1.35 [0.053] 1.15 [0.045] 1.6 [0.063] 1.4 [0.055] 1.2 [0.047] 96 12237 1.3 [0.051] Package Dimensions in mm 96 12238 www.vishay.com 4 0.8 [0.031] 1 [0.039] 0.8 [0.031] Document Number 85015 Rev. 1.3, 05-Sep-08 BFP193T / BFP193TW / BFP193TRW Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 85015 Rev. 1.3, 05-Sep-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1