BFR91AGELB

Not for new design, this product will be obsoleted soon BFR91A Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • • High power gain Low noise figure e3 High transition frequency Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 2 E 2 1 3 B 1 C 19039 Applications • RF amplifier up to GHz range specially for wide band antenna amplifier Electrostatic sensitive device. Observe precautions for handling. Mechanical Data Case: TO-50 plastic case Weight: approx. 111 mg Pinning: 1 = collector, 2 = emitter, 3 = base Parts Table Part BFR91A Ordering code BFR91AGELB Marking BFR91A Remarks Packed in Bulk Package TO-50(3) Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Collector base voltage Collector emitter voltage Emitter base voltage Collector current Total power dissipation Junction temperature Storage temperature range Tamb ≤ 60 °C Test condition Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 20 12 2 50 300 150 - 65 to + 150 Unit V V V mA mW °C °C Maximum Thermal Resistance Parameter Junction ambient 1) Test condition Symbol RthJA Value 300 Unit K/W Note: 1) on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35 μm Cu Document Number 85031 Rev. 1.6, 08-Sep-08 For technical support, please contact: RF-Transistor@vishay.com www.vishay.com 1 BFR91A Vishay Semiconductors Electrical DC Characteristics Tamb = 25 °C, unless otherwise specified Parameter Collector emitter cut-off current Collector base cut-off current Emitter base cut-off current Collector emitter breakdown voltage Collector emitter saturation voltage Test condition VCE = 20 V, VBE = 0 VCB = 20 V, IE = 0 VEB = 2 V, IC = 0 IC = 1 mA, IB = 0 IC = 50 mA, IB = 5 mA Symbol ICES ICBO IEBO V(BR)CEO VCEsat hFE 40 12 0.1 90 0.4 150 Min Typ. Max 100 100 10 Unit μA nA μA V V DC forward current transfer ratio VCE = 5 V, IC = 30 mA Electrical AC Characteristics Tamb = 25 °C, unless otherwise specified Parameter Transition frequency Collector base capacitance Collector emitter capacitance Emitter base capacitance Test condition VCE = 5 V, IC = 30 mA, f = 500 MHz VCB = 10 V, f = 1 MHz VCB = 5 V, f = 1 MHz VEB = 0.5 V, f = 1 MHz VCE = 8 V, ZS = 50 Ω, f = 800 MHz, IC = 5 mA VCE = 8 V, ZS = 50 Ω, f = 800 MHz, IC = 30 mA VCE = 8 V, IC = 30 mA, ZS = 50 Ω, ZL = ZLopt, f = 800 MHz VCE = 8 V, IC = 30 mA, dIM = 60 dB, f1 = 806 MHz, f2 = 810 MH, ZS = ZL = 50 Ω VCE = 8 V, IC = 30 mA, f = 800 MHz Symbol fT Ccb Cce Ceb F F Min Typ. 6 0.4 0.3 1.5 1.6 2.3 Max Unit GHz pF pF pF dB dB Noise figure Power gain Gpe 14 dB Linear output voltage - two tone intermodulation test Third order intercept point V1 = V2 280 mV IP3 32 dBm Common Emitter S-Parameters Z0 = 50 Ω, Tamb = 25 °C, unless otherwise specified VCE/V IC/mA f/MHz LIN MAG 8 2 100 300 500 800 1000 1200 1500 1800 2000 8 5 100 0.92 0.78 0.64 0.51 0.45 0.41 0.37 0.34 0.32 0.79 S11 ANG deg - 22.1 - 61.3 - 92.7 - 128.0 - 146.3 - 161.4 177.9 159.7 149.7 - 31.8 6.38 5.42 4.38 3.19 2.65 2.27 1.85 1.58 1.44 13.51 LIN MAG S21 ANG deg 162.8 134.7 114.3 92.9 82.3 73.8 63.0 53.4 48.5 153.5 0.02 0.05 0.07 0.09 0.10 0.11 0.12 0.14 0.16 0.02 LIN MAG S12 ANG deg 78.4 61.5 52.8 49.3 50.4 53.1 57.8 61.8 63.8 75.1 0.9 0.88 0.79 0.73 0.71 0.70 0.71 0.73 0.74 0.92 LIN MAG S22 ANG deg - 8.1 - 20.8 - 28.2 - 35.9 - 40.6 - 45.1 - 52.3 - 60.0 - 64.9 - 13.4 www.vishay.com 2 For technical support, please contact: RF-Transistor@vishay.com Document Number 85031 Rev. 1.6, 08-Sep-08 BFR91A Vishay Semiconductors VCE/V IC/mA f/MHz LIN MAG 300 500 800 1000 1200 1500 1800 2000 8 10 100 300 500 800 1000 1200 1500 1800 2000 8 20 100 300 500 800 1000 1200 1500 1800 2000 8 30 100 300 500 800 1000 1200 1500 1800 2000 0.54 0.40 0.30 0.27 0.25 0.22 0.21 0.20 0.63 0.35 0.25 0.20 0.18 0.17 0.16 0.15 0.15 0.44 0.22 0.16 0.14 0.13 0.12 0.12 0.12 0.11 0.34 0.17 0.14 0.13 0.12 0.12 0.12 0.11 0.11 S11 ANG deg - 78.6 - 107.8 - 138.4 - 153.8 - 167.2 175.1 157.8 149.4 - 43.0 - 91.7 - 117.7 - 145.2 - 160.0 - 171.7 173.5 153.9 148.4 - 55.8 - 103.9 - 127.5 - 153.3 - 165.9 - 177.3 170.1 152.3 147.1 - 64.0 - 112.9 - 136.2 - 159.4 - 171.4 178.6 165.7 147.8 143.7 9.24 6.44 4.30 3.50 2.98 2.41 2.06 1.88 21.15 11.55 7.47 4.85 3.93 3.32 2.70 2.30 2.09 28.24 12.79 8.00 5.13 4.15 3.51 2.84 2.42 2.21 31.01 13.08 8.10 5.17 4.18 3.53 2.87 2.44 2.23 LIN MAG S21 ANG deg 119.9 101.9 85.7 77.8 71.1 62.4 54.2 49.7 143.4 109.2 95.1 82.1 75.5 69.8 62.0 54.6 50.3 132.6 102.0 90.7 79.8 73.9 68.7 61.5 54.4 50.6 127.3 99.1 88.9 78.7 73.0 68.0 61.1 54.2 50.3 0.04 0.06 0.09 0.10 0.12 0.14 0.18 0.19 0.02 0.04 0.06 0.09 0.11 0.13 0.16 0.19 0.21 0.02 0.04 0.06 0.09 0.11 0.13 0.17 0.20 0.22 0.02 0.04 0.06 0.09 0.11 0.13 0.17 0.20 0.22 LIN MAG S12 ANG deg 61.9 61.0 63.7 65.0 65.7 66.0 65.3 64.5 72.5 67.2 69.5 71.1 71.1 70.4 68.7 66.4 64.8 72.8 74.1 75.8 75.4 74.2 72.9 70.0 67.1 65.0 73.3 77.2 77.8 76.8 75.3 73.6 70.5 67.4 65.4 0.73 0.64 0.59 0.58 0.58 0.59 0.61 0.62 0.85 0.62 0.55 0.53 0.52 0.52 0.53 0.54 0.55 0.76 0.54 0.50 0.49 0.48 0.49 0.50 0.51 0.52 0.71 0.52 0.49 0.48 0.48 0.48 0.49 0.50 0.51 LIN MAG S22 ANG deg - 26.4 - 31.1 - 36.3 - 41.3 - 45.8 - 53.2 - 60.6 - 65.5 - 18.5 - 28.0 - 30.6 - 36.4 - 41.3 - 45.9 - 53.7 - 61.4 - 66.5 - 22.3 - 26.5 - 28.6 - 35.2 - 40.4 - 45.5 - 53.6 - 61.6 - 66.7 - 23.3 - 24.9 - 27.3 - 34.3 - 39.6 - 45.0 - 53.3 - 61.3 - 66.6 Document Number 85031 Rev. 1.6, 08-Sep-08 For technical support, please contact: RF-Transistor@vishay.com www.vishay.com 3 BFR91A Vishay Semiconductors Typical Characteristics Tamb = 25 °C unless otherwise specified 3.5 (mW) F - Noise Figure (dB) 3.0 2.5 2.0 1.5 1.0 0.5 0 0 5 10 15 20 25 30 V CE = 8 V f = 800 MHz ZS = 50 (°C) 12897 I C - Collector Current (mA) Figure 1. Total Power Dissipation vs. Ambient Temperature Figure 4. Noise Figure vs. Collector Current 7000 f T - Transition Frequency (MHz) 6000 5000 4000 3000 2000 1000 0 0 12895 V CE = 5 V f = 500 MHz 10 20 30 40 50 I C - Collector Current (mA) Figure 2. Transition Frequency vs. Collector Current 1.0 Ccb - Collector Base Capacitance (pF) 0.8 0.6 0.4 0.2 f = 1 MHz 0 0 12896 4 8 12 16 20 V CB - Collector Base Voltage (V) Figure 3. Collector Base Capacitance vs. Collector Base Voltage www.vishay.com 4 For technical support, please contact: RF-Transistor@vishay.com Document Number 85031 Rev. 1.6, 08-Sep-08 BFR91A Vishay Semiconductors VCE = 10 V, IC = 10 mA, Z0 = 50 Ω S11 j j0.5 j2 S12 90 ° 1.5 1.0 0.5 120 ° 2.0 GHz 60 ° 150 ° j0.2 2.0 GHz 1.0 1 0.3 30 ° j5 0 0.2 2 5 ∞ -j5 180 ° 0.1 0.08 0.16 0° -j0.2 0.1 -150 ° -j0.5 -j -j2 13 519 -30 ° 13 518 -120 ° -90 ° -60 ° Figure 5. Input Reflection Coefficient Figure 7. Reverse Transmission Coefficient S21 90 ° 120° 0.1 0.3 S22 j 60 ° j0.5 30 ° j2 150° j0.2 j5 180° 2.0 GHz 20 40 0° 0 0.2 0.5 1 2 0.3 1.0 5 0.1 ∞ -j0.2 -150 ° -30 ° -j0.5 13 521 2.0 GHz -j5 -j2 -j 13 520 -120 ° -60 ° -90 ° Figure 6. Forward Transmission Coefficient Figure 8. Output Reflection Coefficient Document Number 85031 Rev. 1.6, 08-Sep-08 For technical support, please contact: RF-Transistor@vishay.com www.vishay.com 5 BFR91A Vishay Semiconductors Package Dimensions in millimeters: TO-50 96 12244 www.vishay.com 6 For technical support, please contact: RF-Transistor@vishay.com Document Number 85031 Rev. 1.6, 08-Sep-08 BFR91A Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 85031 Rev. 1.6, 08-Sep-08 For technical support, please contact: RF-Transistor@vishay.com www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1