BFR93AF

VISHAY BFR93AF Vishay Semiconductors Silicon NPN Planar RF Transistor Description The main purpose of this bipolar transistor is broadband amplification up to 1 GHz. In the space-saving 3-pin surface-mount SOT490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous packages. In addition to space savings, the SOT490 provides a higher level of reliability than other 3-pin packages, such as more resistance to moisture. Due to the short length of its leads the SOT490 is also reducing package inductances resulting in some better electrical performance. All of these aspects make this device an ideal choice for demanding RF applications. 1 2 3 16867 Electrostatic sensitive device. Observe precautions for handling. Features • High power gain • High transition frequency • Low noise figure Mechanical Data Typ: BFR93AF Case: Plastic case (SOT 490) Weight: 2.5 mg Pinning: 1 = Collector, 2 = Base, 3 = Emitter Applications Wide band amplifier up to GHz range. Parts Table Part BFR93AF R2 Marking SOT490 Package Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Tamb ≤ 60 °C Test condition Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 20 12 2 50 200 150 - 65 to + 150 Unit V V V mA mW °C °C Maximum Thermal Resistance Parameter Junction ambient 1) 1/ Test condition Symbol RthJA Value 450 Unit K/W on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 µm Cu Electrical DC Characteristics Tamb = 25 °C, unless otherwise specified Parameter Collector cut-off current Collector-base cut-off current Test condition VCE = 20 V, VBE = 0 VCB = 10 V, IE = 0 Symbol ICES ICBO Min Typ. Max 100 100 Unit µA nA Document Number 85099 Rev. 2, 23-Sep-02 www.vishay.com 1 BFR93AF Vishay Semiconductors Parameter Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltage DC forward current transfer ratio Test condition VEB = 2 V, IC = 0 IC = 1 mA, IB = 0 IC = 50 mA, IB = 5 mA VCE = 5 V, IC = 30 mA Symbol IEBO V(BR)CEO VCEsat hFE 40 12 0.1 90 0.4 150 Min Typ. Max 10 VISHAY Unit µA V V Electrical AC Characteristics Tamb = 25 °C, unless otherwise specified Parameter Transition frequency Collector-base capacitance Collector-emitter capacitance Emitter-base capacitance Noise figure Test condition VCE = 5 V, IC = 30 mA, f = 500 MHz VCB = 10 V, f = 1 MHz VCE = 5 V, f = 1 MHz VEB = 0.5 V, f = 1 MHz VCE = 8 V, IC = 5 mA, ZS = 50 Ω, f = 800 MHz VCE = 8 V, IC = 25 mA, ZS = 50 Ω, f = 800 MHz Power gain Transducer gain Linear output voltage - two tone intermodulation test Third order intercept point VCE = 8 V, ZS = 50 Ω, ZL = ZLopt, IC = 25 mA, f = 800 MHz VCE = 8 V, IC = 25 mA, f = 800 MHz, ZO = 50 Ω VCE = 8 V, IC = 25 mA, dIM = 60 dB, f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 Ω VCE = 8 V, IC = 25 mA, f = 800 MHz Symbol fT Ccb Cce Ceb F F Gpe |S21e|2 V1 = V2 Min Typ. 6 0.45 0.2 1.5 1.6 2.1 15 14 260 Max Unit GHz pF pF pF dB dB dB dB mV IP3 31 dBm Document Number 85099 Rev. 2, 23-Sep-02 www.vishay.com 2 VISHAY Package Dimensions in mm or Inches (mm) BFR93AF Vishay Semiconductors ISO Method E 16866 Document Number 85099 Rev. 2, 23-Sep-02 www.vishay.com 3 BFR93AF Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. VISHAY 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Seminconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 85099 Rev. 2, 23-Sep-02 www.vishay.com 4