BFS17W

BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 94 9280 9510527 13 581 2 3 3 2 BFS17 Marking: E1 Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter BFS17R Marking: E4 Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter 1 13 652 13 570 2 3 BFS17W Marking: WE1 Plastic case (SOT 323) 1 = Collector, 2 = Base, 3 = Emitter Document Number 85038 Rev. 4, 20-Jan-99 www.vishay.de • FaxBack +1-408-970-5600 1 (10) BFS17/BFS17R/BFS17W Vishay Telefunken Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 25 15 2.5 25 200 150 –55 to +150 Unit V V V mA mW °C °C Tamb ≤ 60 °C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthJA Value 450 Unit K/W www.vishay.de • FaxBack +1-408-970-5600 2 (10) Document Number 85038 Rev. 4, 20-Jan-99 BFS17/BFS17R/BFS17W Vishay Telefunken Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Collector cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltage DC forward current transfer ratio Test Conditions VCE = 25 V, VBE = 0 VCB = 10 V, IE = 0 VEB = 2.5 V, IC = 0 IC = 1 mA, IB = 0 IC = 10 mA, IB = 1 mA VCE = 1 V, IC = 2 mA VCE = 1 V, IC = 25 mA Symbol Min Typ Max Unit ICES 100 mA ICBO 100 nA IEBO 10 mA V(BR)CEO 15 V VCEsat 0.75 V hFE 20 100 150 hFE 20 Electrical AC Characteristics Tamb = 25_C, unless otherwise specified Parameter Transition frequency q y Test Conditions VCE = 5 V, IC = 2 mA, f = 300 MHz VCE = 5 V, IC = 14 mA, f = 300 MHz VCE = 5 V, IC = 25 mA, f = 300 MHz Collector-base capacitance VCB = 5 V, f = 1 MHz Collector-emitter capacitance VCE = 5 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure VCE = 5 V, IC = 2 mA, ZS = 50 W, f = 800 MHz Power gain VCE = 5 V, IC = 14 mA, ZS = 50 W, f = 200 MHz VCE = 5 V, IC = 14 mA, ZS = 50 W, f = 800 MHz Linear output voltage – two VCE = 5 V, IC = 14 mA, dIM = 60 dB, tone intermodulation test f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 W Third order intercept point VCE = 5 V, IC = 14 mA, f = 800 MHz Symbol fT fT fT Ccb Cce Ceb F Gpe Gpe V1 = V2 IP3 Min Typ 1.5 2.4 2.1 0.45 0.2 0.8 3.5 23 11 100 Max Unit GHz GHz GHz pF pF pF dB dB dB mV 23 dBm Document Number 85038 Rev. 4, 20-Jan-99 www.vishay.de • FaxBack +1-408-970-5600 3 (10) BFS17/BFS17R/BFS17W Vishay Telefunken Common Emitter S–Parameters Z0 = 50 W, Tamb = 25_C, unless otherwise specified S11 VCE/V IC/mA f/MHz 100 300 500 800 1000 1200 1500 1800 2000 100 300 500 800 1000 1200 1500 1800 2000 100 300 500 800 1000 1200 1500 1800 2000 LIN MAG 0.89 0.67 0.52 0.42 0.40 0.40 0.41 0.43 0.44 0.75 0.48 0.39 0.36 0.35 0.37 0.40 0.42 0.43 0.58 0.39 0.36 0.36 0.36 0.38 0.41 0.44 0.46 ANG deg –30.1 –77.7 –110.1 –141.1 –155.6 –167.6 176.3 162.8 153.6 –49.0 –106.9 –137.3 –162.5 –173.1 178.1 165.0 153.7 146.0 –70.1 –129.4 –154.4 –174.1 176.8 169.3 159.0 148.4 140.9 LIN MAG 5.92 4.35 3.12 2.13 1.77 1.51 1.27 1.09 0.98 11.55 6.36 4.09 2.65 2.16 1.84 1.51 1.28 1.16 16.31 7.28 4.52 2.88 2.33 1.97 1.61 1.36 1.23 S21 ANG deg 155.7 121.5 100.8 82.4 73.5 66.1 56.0 48.6 45.8 142.9 106.6 90.5 76.0 68.6 62.2 53.2 46.4 44.2 130.8 98.3 85.2 72.6 65.9 59.8 51.7 45.4 43.0 LIN MAG 0.03 0.06 0.08 0.09 0.10 0.11 0.13 0.15 0.18 0.02 0.05 0.06 0.08 0.10 0.11 0.14 0.16 0.19 0.02 0.04 0.05 0.08 0.10 0.11 0.14 0.17 0.20 S12 ANG deg 73.7 53.5 47.4 48.7 51.3 54.3 59.6 65.5 71.6 66.8 55.0 56.9 61.2 63.2 65.2 68.1 71.8 76.1 62.7 61.2 64.9 67.6 68.7 70.2 72.7 75.6 79.6 LIN MAG 0.95 0.80 0.71 0.67 0.67 0.67 0.66 0.66 0.68 0.88 0.67 0.61 0.60 0.61 0.61 0.61 0.61 0.64 0.79 0.59 0.56 0.57 0.58 0.59 0.59 0.60 0.62 S22 ANG deg –9.2 –18.5 –20.3 –21.6 –23.9 –27.1 –32.4 –37.3 –41.0 –14.3 –18.9 –17.4 –17.6 –20.1 –23.4 –28.9 –33.7 –37.5 –17.5 –16.5 –14.2 –14.8 –17.5 –21.3 –26.7 –31.8 –35.7 2 5 5 10 www.vishay.de • FaxBack +1-408-970-5600 4 (10) Document Number 85038 Rev. 4, 20-Jan-99 BFS17/BFS17R/BFS17W Vishay Telefunken S11 VCE/V IC/mA f/MHz 100 300 500 800 1000 1200 1500 1800 2000 100 300 500 800 1000 1200 1500 1800 2000 LIN MAG 0.49 0.37 0.36 0.37 0.38 0.40 0.44 0.46 0.48 0.44 0.36 0.38 0.39 0.40 0.42 0.46 0.49 0.49 ANG deg –84.8 –140.9 –162.3 –179.6 173.1 166.1 155.8 145.8 137.7 –96.6 –148.7 –167.0 177.5 169.8 163.8 153.8 143.7 136.1 LIN MAG 18.25 7.49 4.59 2.91 2.34 1.98 1.61 1.36 1.23 19.07 7.46 4.55 2.87 2.31 1.95 1.58 1.34 1.21 S21 ANG deg 124.3 94.8 82.8 71.0 64.5 58.8 50.7 44.6 42.4 120.0 92.6 81.4 69.9 63.5 57.9 50.1 43.9 41.9 LIN MAG 0.01 0.03 0.05 0.08 0.09 0.11 0.14 0.17 0.20 0.01 0.03 0.05 0.07 0.09 0.11 0.13 0.17 0.20 S12 ANG deg 62.8 65.1 68.3 70.4 71.4 72.8 75.2 78.2 81.9 62.0 67.9 70.5 72.3 73.3 74.9 77.5 80.4 83.7 LIN MAG 0.73 0.57 0.55 0.56 0.58 0.58 0.59 0.60 0.62 0.70 0.57 0.55 0.57 0.58 0.59 0.59 0.60 0.62 S22 ANG deg –18.0 –14.7 –12.7 –13.5 –16.5 –20.4 –26.2 –31.4 –35.2 –17.6 –13.3 –11.6 –13.2 –16.3 –20.3 –26.2 –31.4 –35.4 15 5 20 Document Number 85038 Rev. 4, 20-Jan-99 www.vishay.de • FaxBack +1-408-970-5600 5 (10) BFS17/BFS17R/BFS17W Vishay Telefunken Typical Characteristics (Tamb = 25_C unless otherwise specified) C cb – Collector Base Capacitance ( pF ) 300 P tot – Total Power Dissipation ( mW ) 250 200 150 100 50 0 0 96 12159 1.0 0.8 0.6 0.4 0.2 f=1MHz 0 0 4 8 12 16 20 VCB – Collector Base Voltage ( V ) 20 40 60 80 100 120 140 160 13604 Tamb – Ambient Temperature ( °C ) Figure 1. Total Power Dissipation vs. Ambient Temperature 3000 f T – Transition Frequency ( MHz ) 2500 2000 1500 1000 500 0 0 13603 Figure 3. Collector Base Capacitance vs. Collector Base Voltage VCE=5V f=300MHz 5 10 15 20 25 30 IC – Collector Current ( mA ) Figure 2. Transition Frequency vs. Collector Current www.vishay.de • FaxBack +1-408-970-5600 6 (10) Document Number 85038 Rev. 4, 20-Jan-99 BFS17/BFS17R/BFS17W Vishay Telefunken VCE = 5 V, IC = 10 mA , Z0 = 50 W S11 j 120° j0.5 j2 150° j0.2 2.0 GHz j5 1.5 1.0 0.5 0 0.2 1.0 1 2 5 30° S12 90° 2.0 GHz 60° 1 –j5 –j0.2 13 546 S21 120° 0.1 150° 0.3 0.5 180° 8 16 0° 30° 90° 60° 2.0 GHz 0 –j0.2 –150° –30° –120° 13548 –90° –60° 13 549 Figure 5. Forward transmission coefficient Document Number 85038 Rev. 4, 20-Jan-99 ÁÁÁÁÁÁÁÁÁÁ ÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁ ÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁ ÁÁÁ 0.5 0.3 0.1 –j0.5 –j –j2 180° 0.1 0.08 0.16 0° –150° –30° –120° 13 547 –90° –60° Figure 4. Input reflection coefficient Figure 6. Reverse transmission coefficient S22 j j0.5 j2 j0.2 j5 0.2 0.5 1 2 0.5 5 1 –j5 0.1 2.0 GHz –j0.5 –j –j2 Figure 7. Output reflection coefficient www.vishay.de • FaxBack +1-408-970-5600 7 (10) BFS17/BFS17R/BFS17W Vishay Telefunken Dimensions of BFS17 in mm 95 11346 Dimensions of BFS17R in mm 95 11347 www.vishay.de • FaxBack +1-408-970-5600 8 (10) Document Number 85038 Rev. 4, 20-Jan-99 BFS17/BFS17R/BFS17W Vishay Telefunken Dimensions of BFS17W in mm 96 12236 Document Number 85038 Rev. 4, 20-Jan-99 www.vishay.de • FaxBack +1-408-970-5600 9 (10) BFS17/BFS17R/BFS17W Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.de • FaxBack +1-408-970-5600 10 (10) Document Number 85038 Rev. 4, 20-Jan-99