BPV10

BPV10 Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • Radiant sensitive area (in mm2): 0.78 • High photo sensitivity 94 8390 • High radiant sensitivity • Suitable for visible and near infrared radiation • High bandwidth: 250 MHz at VR = 12 V DESCRIPTION BPV10 is a PIN photodiode with high speed and high radiant sensitivity in clear, T-1¾ plastic package. It is sensitive to visible and near infrared radiation. • Fast response times • Angle of half sensitivity: ϕ = ± 20° • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with APPLICATIONS • High speed photo detector PRODUCT SUMMARY COMPONENT BPV10 Note Test condition see table “Basic Characteristics” Ira (mA) 70 ϕ (deg) ± 20 λ0.1 (nm) 380 to 1100 ORDERING INFORMATION ORDERING CODE BPV10 Note MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM T-1¾ ABSOLUTE MAXIMUM RATINGS PARAMETER Reverse voltage Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified t ≤ 5 s, 2 mm from body Connected with Cu wire, 0.14 mm2 Tamb ≤ 25 °C TEST CONDITION SYMBOL VR PV Tj Tamb Tstg Tsd RthJA VALUE 10 215 100 - 40 to + 100 - 40 to + 100 260 350 UNIT V mW °C °C °C °C K/W www.vishay.com 334 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81502 Rev. 1.6, 08-Sep-08 BPV10 Silicon PIN Photodiode, RoHS Compliant Vishay Semiconductors BASIC CHARACTERISTICS PARAMETER Forward voltage Breakdown voltage Reverse dark current Diode capacitance Open circuit voltage Short circuit current TEST CONDITION IF = 50 mA IR = 100 µA, E = 0 VR = 20 V, E = 0 VR = 0 V, f = 1 MHz, E = 0 VR = 5 V, f = 1 MHz, E = 0 EA = 1 klx Ee = 1 mW/cm2, λ = 950 nm EA = 1 klx Ee = 1 mW/cm2, λ = 950 nm EA = 1 klx, VR = 5 V Reverse light current Absolute spectral sensitivity Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth Quantum efficiency Noise equivalent power Detectivity Rise time Fall time Note Tamb = 25 °C, unless otherwise specified λ = 950 nm VR = 20 V, λ = 950 nm VR = 20 V, λ = 950 nm VR = 50 V, RL = 50 Ω, λ = 820 nm VR = 50 V, RL = 50 Ω, λ = 820 nm Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V VR = 5 V, λ = 950 nm SYMBOL VF V(BR) Iro CD CD VO VO IK IK Ira Ira s(λ) ϕ λp λ0.1 η NEP D tr tf 38 60 1 11 3.8 480 450 80 65 85 70 0.55 ± 20 920 380 to 1100 72 3 x 10-14 3 x 1012 2.5 2.5 5 MIN. TYP. 1.0 MAX. 1.3 UNIT V V nA pF pF mV mV µA µA µA µA A/W deg nm nm % W/√Hz cm√Hz/W ns ns BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified Ira, rel - Relative Reverse Light Current 1000 Iro - Reverse Dark Current (nA) 1.4 1.2 100 VR = 5 V λ = 950 nm 1.0 10 0.8 VR = 20 V 1 20 40 60 80 100 0.6 0 20 40 60 80 100 94 8436 Tamb - Ambient Temperature (°C) 94 8416 Tamb - Ambient Temperature (°C) Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Document Number: 81502 Rev. 1.6, 08-Sep-08 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 335 BPV10 Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant S ( λ)rel - Relative Spectral Sensitivity 1000 Ira - Reverse Light Current (µA) 1.0 0.8 0.6 0.4 0.2 0 350 100 10 1 VR = 5 V λ = 950 nm 0.1 0.01 94 8437 0.1 1 10 94 8440 550 750 950 1150 E e - Irradiance (mW/cm 2) λ - Wavelength (nm) Fig. 3 - Reverse Light Current vs. Irradiance Fig. 6 - Relative Spectral Sensitivity vs. Wavelength 100 0° 10° 20° 30° ϕ - Angular Displacement Ira - Reverse Light Current (µA) 1 mW/cm2 0.5 mW/cm2 Srel - Relative Sensitivity 0.2 mW/cm2 10 λ = 950 nm 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.1 mW/cm2 0.05 mW/cm2 0.02 mW/cm2 1 0.1 94 8438 1 10 100 94 8624 0.6 0.4 0.2 0 VR - Reverse Voltage (V) Fig. 4 - Reverse Light Current vs. Reverse Voltage Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement 12 CD - Diode Capacitance (pF) 10 8 6 4 2 0 0.1 1 10 100 E=0 f = 1 MHz 94 8439 VR - Reverse Voltage (V) Fig. 5 - Diode Capacitance vs. Reverse Voltage www.vishay.com 336 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81502 Rev. 1.6, 08-Sep-08 BPV10 Silicon PIN Photodiode, RoHS Compliant Vishay Semiconductors PACKAGE DIMENSIONS in millimeters C A Ø5 ± 0.15 5.75 Chip position (4.3) ± 0.15 R 2.45 (sphere) ± 0.3 ± 0.3 ± 0.5 11.8 8.6 7.6 ± 0.15 < 0.7 34.8 Area not plane 1 + 0.2 - 0.1 0.8 + 0.2 - 0.1 ± 0.25 0.63 + 0.2 - 0.1 0.5 + 0.15 1.5 2.54 nom. Drawing-No.: 6.544-5185.02-4 Issue:1; 01.07.96 96 12199 technical drawings according to DIN specifications Document Number: 81502 Rev. 1.6, 08-Sep-08 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 337 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1