BPV11_08

BPV11 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation 12785 • Fast response times • Angle of half sensitivity: ϕ = ± 15° • Base terminal connected DESCRIPTION BPV11 is a silicon NPN phototransistor with high radiant sensitivity in clear, T-1¾ plastic package with base terminal. It is sensitive to visible and near infrared radiation. • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with APPLICATIONS • Detector for industrial electronic circuitry, measurement and control PRODUCT SUMMARY COMPONENT BPV11 Note Test condition see table “Basic Characteristics” Ica (mA) 10 ϕ (deg) ± 15 λ0.1 (nm) 450 to 1080 ORDERING INFORMATION ORDERING CODE BPV11 Note MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 3000 pcs, 3000 pcs/bulk PACKAGE FORM T-1¾ ABSOLUTE MAXIMUM RATINGS PARAMETER Collector base voltage Collector emitter voltage Emitter base voltage Collector current Collector peak current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified t ≤ 5 s, 2 mm from body Connected with Cu wire, 0.14 mm2 tp/T = 0.5, tp ≤ 10 ms Tamb ≤ 47 °C TEST CONDITION SYMBOL VCBO VCEO VEBO IC ICM PV Tj Tamb Tstg Tsd RthJA VALUE 80 70 5 50 100 150 100 - 40 to + 100 - 40 to + 100 260 350 UNIT V V V mA mA mW °C °C °C °C K/W www.vishay.com 342 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81504 Rev. 1.6, 05-Sep-08 BPV11 Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors 200 PV - Power Dissipation (mW) 160 120 RthJA 80 40 0 0 94 8300 20 40 60 80 Tamb - Ambient Temperature (°C) 100 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Collector emitter breakdown voltage Collector emitter dark current DC current gain Collector emitter capacitance Collector base capacitance Collector light current Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth Collector emitter saturation voltage Turn-on time Turn-off time Cut-off frequency Note Tamb = 25 °C, unless otherwise specified Ee = 1 mW/cm2, λ = 950 nm, IC = 1 m A VS = 5 V, IC = 5 mA, RL = 100 Ω VS = 5 V, IC = 5 mA, RL = 100 Ω VS = 5 V, IC = 5 mA, RL = 100 Ω TEST CONDITION IC = 1 mA VCE = 10 V, E = 0 VCE = 5 V, IC = 5 mA, E = 0 VCE = 0 V, f = 1 MHz, E = 0 VBE = 0 V, f = 1 MHz, E = 0 Ee = 1 mW/cm2, λ = 950 nm, VCE = 5 V SYMBOL V(BR)CEO ICEO hFE CCEO CCBO Ica ϕ λp λ0.1 VCEsat ton toff fc 3 MIN. 70 1 450 15 19 10 ± 15 850 450 to 1080 130 6 5 110 300 pF pF mA deg nm nm mV µs µs kHz 50 TYP. MAX. UNIT V nA BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 104 ICEO - Collector Dark Current (nA) 2.0 Ica rel - Relative Collector Current 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 20 40 60 80 100 VCE = 5 V Ee = 1 mW/cm2 λ = 950 nm 10 3 VCE = 10 V 102 101 10 20 94 8249 40 60 80 100 Tamb - Ambient Temperature (°C) 94 8239 Tamb - Ambient Temperature (°C) Fig. 2 - Collector Dark Current vs. Ambient Temperature Fig. 3 - Relative Collector Current vs. Ambient Temperature Document Number: 81504 Rev. 1.6, 05-Sep-08 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 343 BPV11 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant CCBO - Collector Base Capacitance (pF) 100 Ica - Collector Light Current (mA) 20 16 f = 1 MHz 10 12 1 VCE = 5 V λ = 950 nm 8 0.1 4 0 0.1 1 10 100 VCB - Collector Base Voltage (V) 0.01 0.01 94 8244 0.1 1 10 94 8246 Ee - Irradiance (mW/cm²) Fig. 4 - Collector Light Current vs. Irradiance Fig. 7 - Collector Base Capacitance vs. Collector Base Voltage 100 Ica - Collector Light Current (mA) CCEO - Collector Ermitter Capacitance (pF) 20 16 f = 1 MHz λ = 950 nm Ee = 1 mW/cm2 10 0.5 mW/cm2 0.2 mW/cm2 0.1 mW/cm2 1 0.05 mW/cm2 0.02 mW/cm2 0.1 0.1 12 8 4 0 0.1 1 10 100 VCE - Collector Ermitter Voltage (V) 1 10 100 94 8272 VCE - Collector Emitter Voltage (V) 94 8247 Fig. 5 - Collector Light Current vs. Collector Emitter Voltage Fig. 8 - Collector Emitter Capacitance vs. Collector Emitter Voltage 800 ton/toff - Turn-on/Turn-off Time (µs) 12 600 B - Amplification VCE = 5 V 10 8 6 VCE = 5 V RL = 100 Ω λ = 950 nm 400 ton 4 2 0 toff 200 0 0.01 94 8250 0.1 1 10 100 94 8253 0 4 8 12 16 IC - Collector Current (mA) IC - Collector Current (mA) Fig. 6 - Amplification vs. Collector Current Fig. 9 - Turn-on/Turn-off Time vs. Collector Current www.vishay.com 344 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81504 Rev. 1.6, 05-Sep-08 BPV11 Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors 0° S (λ)rel - Relative Spectral Sensitivity 10° 20° 30° ϕ - Angular Displacement 1.0 0.8 0.6 0.4 0.2 0 400 600 800 1000 94 8248 Srel - Relative Sensitivity 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.6 0.4 0.2 0 94 8348 λ - Wavelength (nm) Fig. 10 - Relative Spectral Sensitivity vs. Wavelength Fig. 11 - Relative Radiant Sensitivity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters ± 0.15 C E B 0.8 + 0.2 - 0.1 5.75 Chip position 5 ± 0.15 (4.55) R 2. 45 (s ph er e) ± 0.3 8.6 ± 0.5 12.3 7.6 ± 0.15 ± 0.3 < 0.7 35 Area not plane 0.8 0.8 + 0.2 - 0.1 + 0.2 - 0.1 ± 0.25 0.5 + 0.2 - 0.1 0.5 + 0.15 1.5 2.54 nom. 1.27 nom. technical drawings according to DIN specifications Drawing-No.: 6.544-5188.01-4 Issue:1; 01.07.96 96 12200 Document Number: 81504 Rev. 1.6, 05-Sep-08 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 345 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1