BPV21F

BPV21F(L) Vishay Telefunken Silicon PIN Photodiode Description BPV21F(L) is a high speed and high sensitive PIN photodiode in a plasic package with a cylindrical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters (l p = 950 nm). Lens radius and chip position are perfectly matched to the chip size, giving high sensitivity without compromising the viewing angle. In comparison with flat packages the cylindrical lens package achieves a sensitivity improvement of 20 %. 94 8387 Features D D D D D D D Large radiant sensitive area (A = 5.7 mm2) Wide viewing angle ϕ = ± 65 ° Fast response times Low junction capacitance TO–92 plastic package with IR filter Filter designed for 950 nm transmission Option ”L”: long lead package optional available with suffix ”L”; e.g.: BPV23FL Applications Infrared remote control and free air transmission systems in combination with IR emitter diodes (TSU...– or TSI...–Series). Absolute Maximum Ratings Tamb = 25_C Parameter Reverse Voltage Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Tamb Symbol VR PV Tj Tamb Tstg Tsd RthJA Value 60 215 100 –55...+100 –55...+100 260 350 Unit V mW °C °C °C °C K/W x 25 °C t x5s Document Number 81507 Rev. 3, 16-Nov-99 www.vishay.de • FaxBack +1-408-970-5600 1 (7) BPV21F(L) Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Forward Voltage Breakdown Voltage Reverse Dark Current Diode Capacitance Serial Resistance Open Circuit Voltage Temp. Coefficient of Vo Short Circuit Current Reverse Light Current Temp. Coefficient of Ira Absolute Spectral Sensitivity y Test Conditions IF = 50 mA IR = 100 mA, E = 0 VR = 10 V, E = 0 VR = 0 V, f = 1 MHz, E = 0 VR = 12 V, f = 1 MHz Ee = 1 mW/cm2, l = 950 nm Ee = 1 mW/cm2, l = 950 nm Ee = 1 mW/cm2, l = 950 nm Ee = 1 mW/cm2, l = 950 nm, VR = 5 V Ee = 1 mW/cm2, l = 950 nm, VR = 10 V VR = 5 V, l = 870 nm VR = 5 V, l = 950 nm Symbol VF V(BR) Iro CD RS Vo TKVo Ik Ira TKIra s(l) s(l) ϕ Min 60 2 48 900 380 –2.6 35 38 0.1 0.35 0.6 ±65 950 870...1050 90 4x10–14 5x1012 70 70 4 1 30 Typ 1 Max 1.3 Unit V V nA pF W 27 mV mV/K mA mA %/K A/W A/W deg nm nm % W/√ Hz cm√Hz/ W ns ns MHz MHz Angle of Half Sensitivity Wavelength of Peak Sensitivity Range of Spectral Bandwidth Quantum Efficiency l = 950 nm Noise Equivalent Power VR = 10 V, l = 950 nm Detectivity VR = 10 V, l = 950 nm Rise Time Fall Time Cut–Off Frequency lp l0.5 h tr tf fc fc NEP D* l = 820 nm l = 820 nm l = 870 nm l = 950 nm VR = 10 V, RL = 1k W, VR = 10 V, RL = 1k W, VR = 12 V, RL = 1k W, VR = 12 V, RL = 1k W, www.vishay.de • FaxBack +1-408-970-5600 2 (7) Document Number 81507 Rev. 3, 16-Nov-99 BPV21F(L) Vishay Telefunken Typical Characteristics (Tamb = 25_C unless otherwise specified) 1000 Ira – Reverse Light Current ( m A ) I ro – Reverse Dark Current ( nA ) 100 l=950nm 1 mW/cm2 0.5 mW/cm2 10 0.2 mW/cm2 0.1 mW/cm2 0.05 mW/cm2 1 100 10 VR=10V 1 20 40 60 80 100 0.1 94 8422 1 10 100 94 8403 Tamb – Ambient Temperature ( °C ) VR – Reverse Voltage ( V ) Figure 1. Reverse Dark Current vs. Ambient Temperature I ra rel – Relative Reverse Light Current 1.4 Figure 4. Reverse Light Current vs. Reverse Voltage 80 CD – Diode Capacitance ( pF ) 1.2 VR=5V l=950nm 60 E=0 f=1MHz 1.0 40 0.8 20 0.6 0 94 8409 0 20 40 60 80 100 94 8423 0.1 1 10 100 Tamb – Ambient Temperature ( °C ) VR – Reverse Voltage ( V ) Figure 2. Relative Reverse Light Current vs. Ambient Temperature 1000 Ira – Reverse Light Current ( m A ) Figure 5. Diode Capacitance vs. Reverse Voltage S ( l ) rel – Relative Spectral Sensitivity 10 1.2 1.0 0.8 0.6 0.4 0.2 0 750 100 10 1 VR=5V l=950nm 0.1 0.01 94 8421 0.1 Ee – Irradiance ( 1 mW / cm2 ) 850 950 1050 1150 94 8408 l – Wavelength ( nm ) Figure 3. Reverse Light Current vs. Irradiance Figure 6. Relative Spectral Sensitivity vs. Wavelength Document Number 81507 Rev. 3, 16-Nov-99 www.vishay.de • FaxBack +1-408-970-5600 3 (7) BPV21F(L) Vishay Telefunken 0° 10 ° 20 ° 30° S rel – Relative Sensitivity 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.6 0.4 0.2 0 0.2 0.4 0.6 94 8406 Figure 7. Relative Radiant Sensitivity vs. Angular Displacement www.vishay.de • FaxBack +1-408-970-5600 4 (7) Document Number 81507 Rev. 3, 16-Nov-99 BPV21F(L) Vishay Telefunken Dimensions BPV21F in mm 9612202 Document Number 81507 Rev. 3, 16-Nov-99 www.vishay.de • FaxBack +1-408-970-5600 5 (7) BPV21F(L) Vishay Telefunken Dimensions BPV21FL in mm 9612207 www.vishay.de • FaxBack +1-408-970-5600 6 (7) Document Number 81507 Rev. 3, 16-Nov-99 BPV21F(L) Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 81507 Rev. 3, 16-Nov-99 www.vishay.de • FaxBack +1-408-970-5600 7 (7)