BPV23F_08

BPV23F, BPV23FL Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant FEATURES • Package type: leaded • Package form: side view • Dimensions (in mm): 4.5 x 5 x 6 • Radiant sensitive area (in mm2): 4.4 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters 94 8633 • Fast response times • Angle of half sensitivity: ϕ = ± 60° • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with DESCRIPTION BPV23F is a PIN photodiode with high speed and high radiant sensitivity in a black, plastic package with side view lens and daylight blocking filter. Filter bandwidth is matched with 900 nm to 950 nm IR emitters. The lens achieves 80 % of sensitivity improvement in comparison with flat package. BPV23FL has long leads, other specifications like BPV23F. APPLICATIONS • High speed detector for infrared radiation • Infrared remote control and free air data transmission systems, e.g. in combination with TSALxxxx series IR emitters PRODUCT SUMMARY COMPONENT BPV23F BPV23FL Note Test condition see table “Basic Characteristics” Ira (µA) 63 63 ϕ (deg) ± 60 ± 60 λ0.5 (nm) 870 to 1050 870 to 1050 ORDERING INFORMATION ORDERING CODE BPV23F BPV23FL Note MOQ: minimum order quantity PACKAGING Bulk Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM Side view Side view, long leads ABSOLUTE MAXIMUM RATINGS PARAMETER Reverse voltage Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified t≤5s Connected with Cu wire, 0.14 mm2 Tamb ≤ 25 °C TEST CONDITION SYMBOL VR PV Tj Tamb Tstg Tsd RthJA VALUE 60 215 100 - 40 to + 100 - 40 to + 100 260 350 UNIT V mW °C °C °C °C K/W www.vishay.com 358 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81510 Rev. 1.7, 08-Sep-08 BPV23F, BPV23FL Silicon PIN Photodiode, RoHS Compliant Vishay Semiconductors BASIC CHARACTERISTICS PARAMETER Forward voltage Breakdown voltage Reverse dark current Diode capacitance Serial resistance Open circuit voltage Temperature coefficient of Vo Short circuit current Reverse light current Temperature coefficient of Ira Absolute spectral sensitivity Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth Quantum efficiency Noise equivalent power Detectivity Rise time Fall time Cut-off frequency Note Tamb = 25 °C, unless otherwise specified λ = 950 nm VR = 10 V, λ = 950 nm VR = 10 V, λ = 950 nm VR = 10 V, RL = 1 kΩ, λ = 820 nm VR = 10 V, RL = 1 kΩ, λ = 820 nm VR = 12 V, RL = 1 kΩ, λ = 870 nm VR = 12 V, RL = 1 kΩ, λ = 950 nm TEST CONDITION IF = 50 mA IR = 100 µA, E = 0 VR = 10 V, E = 0 VR = 0 V, f = 1 MHz, E = 0 VR= 12 V, f = 1 MHz Ee = 1 mW/cm2, λ = 950 nm Ee = 1 mW/cm2, λ = 950 nm Ee = 1 mW/cm2, λ = 950 nm Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V Ee = 1 mW/cm2, λ = 950 nm, VR = 10 V VR = 5 V, λ = 870 nm VR = 5 V, λ = 950 nm SYMBOL VF V(BR) Iro CD RS Vo TKVo Ik Ira TKIra s(λ) s(λ) 45 60 2 48 900 390 - 2.6 60 63 0.2 0.35 0.6 ± 60 950 870 to 1050 90 4 x 10-14 5 x 1012 70 70 4 1 30 MIN. TYP. 1 MAX. 1.3 UNIT V V nA pF Ω mV mV/K µA µA %/K A/W A/W deg nm nm % W/√ Hz cm√Hz/W ns ns MHz MHz ϕ λp λ0.5 η NEP D* tr tf fc fc BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified I ra rel - Relative Reverse Light Current 1000 Iro - Reverse Dark Current (nA) 1.4 1.2 100 VR = 5 V λ = 950 nm 1.0 10 0.8 VR = 10 V 1 20 40 60 80 100 0.6 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) 94 8403 Tamb - Ambient Temperature (°C) 94 8409 Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Document Number: 81510 Rev. 1.7, 08-Sep-08 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 359 BPV23F, BPV23FL Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant 1000 S ( ) rel - Relative Spectral Sensitivity 10 Ira - Reverse Light Current (µA) 1.2 1.0 0.8 0.6 0.4 0.2 0 750 100 10 1 VR = 5 V λ = 950 nm 0.1 0.01 94 8424 0.1 1 850 950 1050 1150 Ee - Irradiance (mW/cm2) 94 8408 - Wavelength (nm) Fig. 3 - Reverse Light Current vs. Irradiance Fig. 6 - Relative Spectral Sensitivity vs. Wavelength 100 Ira - Reverse Light Current (µA) 0° 1 mW/cm2 0.5 mW/cm2 λ = 950 nm 0.2 mW/cm2 0.1 mW/cm2 0.05 mW/cm2 10 ° 20 ° 30 ° ϕ - Angular Displacement Srel - Relative Sensitivity 40 ° 1.0 0.9 0.8 0.7 50 ° 60 ° 70 ° 80 ° 0.6 0.4 0.2 0 10 0.02 mW/cm2 1 0.1 1 10 VR - Reverse Voltage (V) 100 94 8413 94 8425 Fig. 4 - Reverse Light Current vs. Reverse Voltage Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement 80 CD - Diode Capacitance (pF) 60 E=0 f = 1 MHz 40 20 0 0.1 94 8423 1 10 100 VR - Reverse Voltage (V) Fig. 5 - Diode Capacitance vs. Reverse Voltage www.vishay.com 360 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81510 Rev. 1.7, 08-Sep-08 BPV23F, BPV23FL Silicon PIN Photodiode, RoHS Compliant Vishay Semiconductors PACKAGE DIMENSIONS in millimeters: BPV23F 5 + 0.1 - 0.3 3.2 ± 0.15 ± 0.2 4.5 ± 0.2 (2.4) 2.5 < 0.7 ± 0.3 6 ± 0.3 18.8 ± 0.5 8.6 R 2.25 (sphere) 0.65 + 0.1 - 0.2 0.1 3.4 + 0.3 - Area not plane A C 0.45 + 0.2 - 0.1 0.4 + 0.15 2.54 nom. 1.1 ± 0.2 technical drawings according to DIN specifications Drawing-No.: 6.544-5199.01-4 Issue: 2; 19.06.01 95 11475 PACKAGE DIMENSIONS in millimeters: BPV23FL 5 + 0.1 - 0.3 3.2 ± 0.15 ± 0.2 4.5 ± 0.2 (2.4) 2.5 < 0.7 ± 0.3 ± 0.3 6 R 2.2 5 (sp here ) 32.5 ± 0.5 10.8 0.75 - 0.12 0.1 3.4 +0.3 - Area not plane A C 0.63 ± 0.1 0.4 ± 0.1 2.54 nom. 1.1 ± 0.2 technical drawings according to DIN specifications Drawing-No.: 6.544-5236.01-4 Issue: 2; 07.07.97 96 12205 Document Number: 81510 Rev. 1.7, 08-Sep-08 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 361 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1