BPW20R

BPW20R Vishay Telefunken Silicon PN Photodiode Description BPW20R is a planar Silicon PN photodiode in a hermetically sealed short TO–5 case, especially designed for high precision linear applications. Due to its extremely high dark resistance, the short circuit photocurrent is linear over seven decades of illumination level. On the other hand, there is a strictly logarithmic correlation between open circuit voltage and illumination over the same range. Equipped with a clear, flat glass window, the spectral responsitivity reaches from blue to near infrared. 94 8482 Features D D D D D D Hermetically sealed TO–5 case Flat glass window Cathode connected to case Wide viewing angle ϕ = ± 50 ° Large radiant sensitive area (A=7.5 mm2) Suitable for visible and near infrared radiation D D D D D D High sensitivity UV enhanced Low dark current High shunt resistance Excellent linearity For photodiode and photovoltaic cell operation Applications Sensor for light measuring techniques in cameras, photometers, color analyzers, exposure meters (e.g. solariums) and other medical and industrial measuring and control applications. Absolute Maximum Ratings Tamb = 25_C Parameter Reverse Voltage Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Tamb Symbol VR PV Tj Tamb Tstg Tsd RthJA Value 10 300 125 –55...+125 –55...+125 260 250 Unit V mW °C °C °C °C K/W x 50 °C t x5s Document Number 81517 Rev. 2, 20-May-99 www.vishay.de • FaxBack +1-408-970-5600 1 (5) BPW20R Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Forward Voltage Breakdown Voltage Reverse Dark Current Diode Capacitance Dark Resistance Open Circuit Voltage Temp. Coefficient of Vo Short Circuit Current Temp. Coefficient of Ik Reverse Light Current g Test Conditions IF = 50 mA IR = 20 mA, E = 0 VR = 5 V, E = 0 VR = 0 V, f = 1 MHz, E = 0 VR = 5 V, f = 1 MHz, E = 0 VR = 10 mV EA = 1 klx EA = 1 klx EA = 1 klx EA = 1 klx EA = 1 klx, VR = 5 V Ee = 1 mW/cm2, l = 950 nm, VR = 5 V Symbol VF V(BR) Iro CD CD RD Vo TKVo Ik TKIk Ira Ira Min 10 2 1.2 400 38 500 –2 60 0.1 60 42 ±50 920 550...1040 3.4 3.7 30 Typ 1.0 Max 1.3 Unit V V nA nF pF GW mV mV/K mA %/K mA mA deg nm nm ms 330 20 20 Angle of Half Sensitivity Wavelength of Peak Sensitivity Range of Spectral Bandwidth Rise Time VR = 0 V, RL = 1k W, l = 820 nm Fall Time VR = 0 V, RL = 1k W, l = 820 nm lp l0.5 tr tf ϕ ms Typical Characteristics (Tamb = 25_C unless otherwise specified) 104 I ra rel – Relative Reverse Light Current I ro – Reverse Dark Current ( nA ) 1.3 1.2 103 1.1 l=950nm VR=5V 102 VR=5V 101 1.0 0.9 0.8 100 20 94 8468 40 60 80 100 120 94 8469 0 20 40 60 80 100 120 Tamb – Ambient Temperature ( °C ) Tamb – Ambient Temperature ( °C ) Figure 1. Reverse Dark Current vs. Ambient Temperature Figure 2. Relative Reverse Light Current vs. Ambient Temperature www.vishay.de • FaxBack +1-408-970-5600 2 (5) Document Number 81517 Rev. 2, 20-May-99 BPW20R Vishay Telefunken 102 Ik – Short Circuit Current ( m A ) 101 100 10–1 10–2 10–3 10–4 10–2 94 8470 1400 CD – Diode Capacitance ( pF ) 1200 1000 800 600 400 200 0 10–1 100 101 102 103 104 94 8473 E=0 f=1MHz 0.1 1 10 100 EA – Illuminance ( lx ) VR – Reverse Voltage ( V ) Figure 3. Short Circuit Current vs. Illuminance 100 Ira – Reverse Light Current ( m A ) Figure 6. Diode Capacitance vs. Reverse Voltage S ( l ) rel – Relative Spectral Sensitivity 1.0 0.8 0.6 0.4 0.2 0 350 10 VR=5V l=950nm 1 0.1 0.01 94 8471 0.1 1 10 94 8474 550 750 950 1150 Ee – Irradiance ( mW / cm2 ) l – Wavelength ( nm ) Figure 4. Reverse Light Current vs. Irradiance 100 Ira – Reverse Light Current ( m A ) Figure 7. Relative Spectral Sensitivity vs. Wavelength 0° 10 ° 20 ° 30° 0.5 mW/cm2 10 0.2 mW/cm2 0.1 mW/cm2 0.05 mW/cm2 1 0.1 l=950nm S rel – Relative Sensitivity 1 mW/cm2 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.6 0.4 0.2 0 0.2 0.4 0.6 1 10 100 94 8475 94 8472 VR – Reverse Voltage ( V ) Figure 5. Reverse Light Current vs. Reverse Voltage Figure 8. Relative Radiant Sensitivity vs. Angular Displacement Document Number 81517 Rev. 2, 20-May-99 www.vishay.de • FaxBack +1-408-970-5600 3 (5) BPW20R Vishay Telefunken Dimensions in mm 96 12181 www.vishay.de • FaxBack +1-408-970-5600 4 (5) Document Number 81517 Rev. 2, 20-May-99 BPW20R Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 81517 Rev. 2, 20-May-99 www.vishay.de • FaxBack +1-408-970-5600 5 (5)