BPW20RF

BPW20RF Vishay Semiconductors Silicon Photodiode, RoHS Compliant FEATURES • Package type: leaded • Package form: TO-5 • Dimensions (in mm): Ø 8.13 • Radiant sensitive area (in mm2): 7.5 • High photo sensitivity • High radiant sensitivity 94 8482 • Suitable for visible and near infrared radiation • Angle of half sensitivity: ϕ = ± 50° • Hermetically sealed package DESCRIPTION BPW20RF is a planar Silicon PN photodiode in a hermetically sealed short TO-5 case, especially designed for high precision linear applications. Due to its extremely high dark resistance, the short circuit photocurrent is linear over seven decades of illumination level. On the other hand, there is a strictly logarithmic correlation between open circuit voltage and illumination over the same range. Equipped with a clear, flat glass window, the spectral responsitivity reaches from blue to near infrared. • Cathode connected to package • Flat glass window • UV enhanced • Low dark current • High shunt resistance • High linearity • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with APPLICATIONS • Sensor for light measuring techniques in cameras, photometers, color analyzers, exposure meters (e.g. solariums) and other medical and industrial measuring and control applications. PRODUCT SUMMARY COMPONENT BPW20RF Note Test condition see table “Basic Characteristics” Ira (µA) 60 ϕ (deg) ± 50 λ0.5 (nm) 550 to 1040 ORDERING INFORMATION ORDERING CODE BPW20RF Note MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 500 pcs, 500 pcs/bulk PACKAGE FORM TO-5 ABSOLUTE MAXIMUM RATINGS PARAMETER Reverse voltage Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified t≤5s Connected with Cu wire, 0.14 mm2 Tamb ≤ 50 °C TEST CONDITION SYMBOL VR PV Tj Tamb Tstg Tsd RthJA VALUE 10 300 125 - 40 to + 125 - 40 to + 125 260 250 UNIT V mW °C °C °C °C K/W www.vishay.com 374 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81570 Rev. 1.6, 08-Sep-08 BPW20RF Silicon Photodiode, RoHS Compliant Vishay Semiconductors BASIC CHARACTERISTICS PARAMETER Forward voltage Breakdown voltage Reverse dark current Diode capacitance Dark resistance Open circuit voltage Temperature coefficient of Vo Short circuit current Temperature coefficient of Ik Reverse light current Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth Rise time Fall time Note Tamb = 25 °C, unless otherwise specified VR = 0 V, RL = 1 kΩ, λ = 820 nm VR = 0 V, RL = 1 kΩ, λ = 820 nm TEST CONDITION IF = 50 mA IR = 20 µA, E = 0 V R = 5 V, E = 0 VR = 0 V, f = 1 MHz, E = 0 VR = 5 V, f = 1 MHz, E = 0 VR = 10 mV EA = 1 klx EA = 1 klx EA = 1 klx EA = 1 klx EA = 1 klx, VR = 5 V Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V SYMBOL VF V(BR) Iro CD CD RD Vo TKVo Ik TKIk Ira Ira ϕ λp λ0.5 tr tf 20 20 330 10 2 1.2 400 38 500 -2 60 0.1 60 42 ± 50 920 550 to 1040 3.4 3.7 30 MIN. TYP. 1.0 MAX. 1.3 UNIT V V nA nF pF GΩ mV mV/K µA %/K µA µA deg nm nm µs µs BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified I ra rel - Relative Reverse Light Current 10 4 1.3 I ro - Reverse Dark Current (nA) 10 3 1.2 VR = 5 V λ = 950 nm 1.1 10 2 VR = 5 V 10 1 1.0 0.9 10 20 94 8468 0.8 40 60 80 100 120 94 8469 0 20 40 60 80 100 120 Tamb - Ambient Temperature (°C) Tamb - Ambient Temperature (°C) Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Document Number: 81570 Rev. 1.6, 08-Sep-08 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 375 BPW20RF Vishay Semiconductors Silicon Photodiode, RoHS Compliant 10 Ik - Short Circuit Current (µA) 3 1400 C D - Diode Capacitance (pF) 10 2 10 1 10 0 10 -1 10 -2 10 -3 10 -4 10 -2 10 -1 10 0 10 1 10 2 10 3 10 4 10 5 1200 1000 800 600 400 200 0 0.1 1 10 100 E=0 f = 1 MHz 18959 E A - Illuminance (lx) 94 8473 V R - Reverse Voltage (V) Fig. 3 - Short Circuit Current vs. Illuminance Fig. 6 - Diode Capacitance vs. Reverse Voltage 100 S (λ)rel - Relative Spectral Sensitivity 10 94 8474 Ira - Reverse Light Current (µA) 1.0 0.8 0.6 0.4 0.2 0 350 10 1 VR = 5 V λ = 950 nm 0.1 0.01 94 8471 0.1 1 550 750 950 1150 E e - Irradiance (mW/cm2) λ - Wavelength (nm) Fig. 4 - Reverse Light Current vs. Irradiance Fig. 7 - Relative Spectral Sensitivity vs. Wavelength 100 Ira - Reverse Light Current (µA) 1 mW/cm 2 0° 10° 20° 30° 0.5 mW/cm2 10 0.2 mW/cm2 0.1 mW/cm2 40° 1.0 0.9 0.8 50° 60° 70° 80° 0.05 mW/cm 2 1 0.1 λ = 950 nm 1 10 100 0.7 0.6 94 8475 0.4 0.2 0 94 8472 V R - Reverse Voltage (V) Fig. 5 - Reverse Light Current vs. Reverse Voltage Fig. 8 - Relative Radiant Sensitivity vs. Angular Displacement www.vishay.com 376 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81570 Rev. 1.6, 08-Sep-08 ϕ - Angular Displacement Srel - Relative Sensitivity BPW20RF Silicon Photodiode, RoHS Compliant Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 9.1 ± 0.1 + 5.08 nom. Ø 8.13 ± 0.1 ± 0.2 Ø 5.9 ± 0.1 Chip position 3.1 14 -1 (1.65) technical drawings according to DIN specifications Ø 0.45 + 0.02 - 0.05 Drawing-No.: 6.511-5002.01-4 Issue:1; 01.07.96 96 12181 Document Number: 81570 Rev. 1.6, 08-Sep-08 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 377 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1