BPW24R_08

BPW24R Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant FEATURES • Package type: leaded • Package form: TO-18 • Dimensions (in mm): Ø 4.7 • Radiant sensitive area (in mm2): 0.78 • High photo sensitivity • High radiant sensitivity 948642 • Suitable for visible and near infrared radiation • Fast response times • Angle of half sensitivity: ϕ = ± 12° • Hermetically sealed package • Cathode connected to package • Central chip alignment • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with DESCRIPTION BPW24R is a high sensitive silicon planar photodiode in a standard TO-18 hermetically sealed metal case with a glass lens. A precise alignment of the chip gives a good coincidence of mechanical and optical axes. The device features a low capacitance and high speed even at low supply voltages. APPLICATIONS • High speed photo detector PRODUCT SUMMARY COMPONENT BPW24R Note Test condition see table “Basic Characteristics” Ira (µA) 60 ϕ (deg) ± 12 λ0.5 (nm) 600 to 1050 ORDERING INFORMATION ORDERING CODE BPW24R Note MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 1000 pcs, 1000 pcs/bulk PACKAGE FORM TO-18 ABSOLUTE MAXIMUM RATINGS PARAMETER Reverse voltage Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified t≤5s Connected with Cu wire, 0.14 mm2 Tamb ≤ 25 °C TEST CONDITION SYMBOL VR PV Tj Tamb Tstg Tsd RthJA VALUE 60 210 125 - 40 to + 125 - 40 to + 125 260 350 UNIT V mW °C °C °C °C K/W www.vishay.com 382 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81520 Rev. 1.5, 11-Aug-08 BPW24R Silicon PIN Photodiode, RoHS Compliant Vishay Semiconductors BASIC CHARACTERISTICS PARAMETER Breakdown voltage Reverse dark current Diode capacitance Open circuit voltage Temperature coefficient of Vo Short circuit current Temperature coefficient of Ik Reverse light current Absolute Spectral Sensitivity Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth Rise time Fall time Note Tamb = 25 °C, unless otherwise specified VR = 20 V, RL = 50 Ω, λ = 820 nm VR = 20 V, RL = 50 Ω, λ = 820 nm TEST CONDITION IR = 100 µA, E = 0 VR = 50 V, E = 0 VR = 0 V, f = 1 MHz, E = 0 VR = 5 V, f = 1 MHz, E = 0 VR = 20 V, f = 1 MHz, E = 0 Ee = 1 mW/cm2, λ = 950 nm Ee = 1 mW/cm2, λ = 950 nm Ee = 1 mW/cm2, λ = 950 nm EA = 1 klx Ee = 1 mW/cm2, λ = 950 nm, VR = 20 V VR = 5 V, λ = 870 nm VR = 5 V, λ = 900 nm SYMBOL V(BR) Iro CD CD CD Vo TKVo Ik TKIk Ira s(λ) s(λ) ϕ λp λ0.5 tr tf 45 MIN. 60 TYP. 200 2 11 3.8 2.5 450 -2 55 0.1 60 0.60 0.55 ± 12 900 600 to 1050 7 7 10 MAX. UNIT V nA pF pF pF mV mV/K µA %/K µA A/W A/W deg nm nm ns ns BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 10 3 V R = 50 V I ra rel - Relative Reverse Light Current 10 4 Iro - Reverse Dark Current (nA) 1.4 1.2 VR = 5 V λ = 950 nm 10 2 1.0 10 1 0.8 10 0 20 94 8454 0.6 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) 40 60 80 100 120 94 8409 Tamb - Ambient Temperature (°C) Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Document Number: 81520 Rev. 1.5, 11-Aug-08 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 383 BPW24R Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant 1000 S (λ)rel - Relative Spectral Sensitivity 10 Ira - Reverse Light Current (µA) 1.0 0.8 0.6 0.4 0.2 0 350 100 10 V R = 10 V λ = 950 nm 1 0.1 0.01 94 8455 0.1 1 550 750 950 1150 Ee - Irradiance (mW/cm2) 94 8458 λ - Wavelength (nm) Fig. 3 - Reverse Light Current vs. Irradiance Fig. 6 - Relative Spectral Sensitivity vs. Wavelength 100 Ira - Reverse Light Current (µA) 0° 10° 20° 30° 1 mW/cm2 0.5 mW/cm2 0.2 mW/cm2 λ = 950 nm Srel - Relative Sensitivity 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 10 0.1 mW/cm2 0.05 mW/cm2 0.02 mW/cm2 1 0.1 94 8456 1 10 100 94 8459 0.6 0.4 0.2 0 VR - Reverse Voltage (V) Fig. 4 - Reverse Light Current vs. Reverse Voltage Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement 12 CD - Diode Capacitance (pF) 10 8 6 4 2 0 0.1 94 8439 E=0 f = 1 MHz 1 10 100 VR - Reverse Voltage (V) Fig. 5 - Diode Capacitance vs. Reverse Voltage www.vishay.com 384 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81520 Rev. 1.5, 11-Aug-08 ϕ - Angular Displacement BPW24R Silicon PIN Photodiode, RoHS Compliant Vishay Semiconductors PACKAGE DIMENSIONS in millimeters A C Chip position (2.5) 6.15 ± 0.25 Ø 4.69 + 0.02 - 0.07 Ø 0.45 +0.02 -0.05 13.2 ± 0.7 5.5 2.54 nom. ± 0.15 technical drawings according to DIN specifications Lens Drawing-No.: 6.503-5022.02-4 Issue: 1; 24.08.98 14487 4 ± 0.05 Document Number: 81520 Rev. 1.5, 11-Aug-08 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 385 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1