BPW24R_11

BPW24R www.vishay.com Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant FEATURES • Package type: leaded • Package form: TO-18 • Dimensions (in mm): Ø 4.7 • Radiant sensitive area (in mm2): 0.78 • High photo sensitivity • High radiant sensitivity 948642 • Suitable for visible and near infrared radiation • Fast response times • Angle of half sensitivity:  = ± 12° • Hermetically sealed package DESCRIPTION BPW24R is a high sensitive silicon planar photodiode in a standard TO-18 hermetically sealed metal case with a glass lens. A precise alignment of the chip gives a good coincidence of mechanical and optical axes. The device features a low capacitance and high speed even at low supply voltages. • Cathode connected to package • Central chip alignment • Compliant to RoHS Directive 2002/95/EC and in accordance with WEEE 2002/96/EC APPLICATIONS • High speed photo detector PRODUCT SUMMARY COMPONENT BPW24R Note • Test condition see table “Basic Characteristics” Ira ( A) 60  (deg) ± 12 0.1 (nm) 400 to 1100 ORDERING INFORMATION ORDERING CODE BPW24R Note • MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 1000 pcs, 1000 pcs/bulk PACKAGE FORM TO-18 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Reverse voltage Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient t5s Connected with Cu wire, 0.14 mm2 Tamb  25 °C TEST CONDITION SYMBOL VR PV Tj Tamb Tstg Tsd RthJA VALUE 60 210 125 - 40 to + 125 - 40 to + 125 260 350 UNIT V mW °C °C °C °C K/W Rev. 1.6, 11-Aug-11 1 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81520 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPW24R www.vishay.com Vishay Semiconductors TEST CONDITION IR = 100 μA, E = 0 VR = 50 V, E = 0 VR = 0 V, f = 1 MHz, E = 0 VR = 5 V, f = 1 MHz, E = 0 VR = 20 V, f = 1 MHz, E = 0 Ee = 1 mW/cm2,  = 950 nm Ee = 1 mW/cm2,  = 950 nm Ee = 1 mW/cm2,  = 950 nm EA = 1 klx Ee = 1 mW/cm2,  = 950 nm, VR = 20 V VR = 5 V,  = 870 nm VR = 5 V,  = 900 nm SYMBOL V(BR) Iro CD CD CD Vo TKVo Ik TKIk Ira s() s()  p 0.1 VR = 20 V, RL = 50 ,  = 820 nm VR = 20 V, RL = 50 ,  = 820 nm tr tf 400 7 7 45 MIN. 60 TYP. 200 2 11 3.8 2.5 450 -2 55 0.1 60 0.60 0.55 ± 12 900 1100 10 MAX. UNIT V nA pF pF pF mV mV/K μA %/K μA A/W A/W deg nm nm ns ns BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Breakdown voltage Reverse dark current Diode capacitance Open circuit voltage Temperature coefficient of Vo Short circuit current Temperature coefficient of Ik Reverse light current Absolute Spectral Sensitivity Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth Rise time Fall time BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 10 4 Iro - Reverse Dark Current (nA) V R = 50 V 1.4 I ra rel - Relative Reverse Light Current 10 3 1.2 VR = 5 V λ = 950 nm 10 2 1.0 10 1 0.8 10 0 20 94 8454 0.6 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) 40 60 80 100 120 94 8409 Tamb - Ambient Temperature (°C) Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Rev. 1.6, 11-Aug-11 2 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81520 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BPW24R www.vishay.com Vishay Semiconductors 1000 S (λ)rel - Relative Spectral Sensitivity 10 Ira - Reverse Light Current (µA) 1.0 0.8 0.6 0.4 0.2 0 350 100 10 V R = 10 V λ = 950 nm 1 0.1 0.01 94 8455 0.1 1 550 750 950 1150 Ee - Irradiance (mW/cm2) 94 8458 λ - Wavelength (nm) Fig. 3 - Reverse Light Current vs. Irradiance Fig. 6 - Relative Spectral Sensitivity vs. Wavelength 100 Ira - Reverse Light Current (µA) 0° 10° 20° 30° 1 mW/cm2 0.5 mW/cm2 0.2 mW/cm2 λ = 950 nm Srel - Relative Sensitivity 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 10 0.1 mW/cm2 0.05 mW/cm2 0.02 mW/cm2 1 0.1 94 8456 1 10 100 94 8459 0.6 0.4 0.2 0 VR - Reverse Voltage (V) Fig. 4 - Reverse Light Current vs. Reverse Voltage Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement 12 CD - Diode Capacitance (pF) 10 8 6 4 2 0 0.1 94 8439 E=0 f = 1 MHz 1 10 100 VR - Reverse Voltage (V) Fig. 5 - Diode Capacitance vs. Reverse Voltage Rev. 1.6, 11-Aug-11 3 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81520 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 ϕ - Angular Displacement BPW24R www.vishay.com PACKAGE DIMENSIONS in millimeters Vishay Semiconductors A C Chip position (2.5) 6.15 ± 0.25 Ø 4.69 + 0.02 - 0.07 Ø 0.45 +0.02 -0.05 13.2 ± 0.7 5.5 2.54 nom. ± 0.15 technical drawings according to DIN specifications Lens Drawing-No.: 6.503-5022.02-4 Issue: 1; 24.08.98 14487 Rev. 1.6, 11-Aug-11 4 ± 0.05 4 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81520 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1