BPW34S

BPW34, BPW34S Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant FEATURES • Package type: leaded • Package form: top view • Dimensions (L x W x H in mm): 5.4 x 4.3 x 3.2 • Radiant sensitive area (in mm2): 7.5 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times 94 8583 • Angle of half sensitivity: ϕ = ± 65° • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with DESCRIPTION BPW34 is a PIN photodiode with high speed and high radiant sensitivity in miniature, flat, top view, clear plastic package. It is sensitive to visible and near infrared radiation. BPW34S is packed in tubes, specifications like BPW34. APPLICATIONS • High speed photo detector PRODUCT SUMMARY COMPONENT BPW34 BPW34S Note Test condition see table “Basic Characteristics” Ira (µA) 50 50 ϕ (deg) ± 65 ± 65 λ0.1 (nm) 430 to 1100 430 to 1100 ORDERING INFORMATION ORDERING CODE BPW34 BPW34S Note MOQ: minimum order quantity PACKAGING Bulk Tube REMARKS MOQ: 3000 pcs, 3000 pcs/bulk MOQ: 1800 pcs, 45 pcs/tube PACKAGE FORM Top view Top view ABSOLUTE MAXIMUM RATINGS PARAMETER Reverse voltage Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified t≤3s Connected with Cu wire, 0.14 mm2 Tamb ≤ 25 °C TEST CONDITION SYMBOL VR PV Tj Tamb Tstg Tsd RthJA VALUE 60 215 100 - 40 to + 100 - 40 to + 100 260 350 UNIT V mW °C °C °C °C K/W www.vishay.com 386 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81521 Rev. 2.0, 08-Sep-08 BPW34, BPW34S Silicon PIN Photodiode, RoHS Compliant Vishay Semiconductors BASIC CHARACTERISTICS PARAMETER Breakdown voltage Reverse dark current Diode capacitance Open circuit voltage Temperature coefficient of Vo Short circuit current Temperature coefficient of Ik Reverse light current Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth Noise equivalent power Rise time Fall time Note Tamb = 25 °C, unless otherwise specified VR = 10 V, λ = 950 nm VR = 10 V, RL = 1 kΩ, λ = 820 nm VR = 10 V, RL = 1 kΩ, λ = 820 nm TEST CONDITION IR = 100 µA, E = 0 VR = 10 V, E = 0 VR = 0 V, f = 1 MHz, E = 0 VR = 3 V, f = 1 MHz, E = 0 Ee = 1 mW/cm2, λ = 950 nm Ee = 1 mW/cm2, λ = 950 nm EA = 1 klx Ee = 1 mW/cm2, λ = 950 nm Ee = 1 mW/cm2, λ = 950 nm EA = 1 klx, VR = 5 V Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V SYMBOL V(BR) Iro CD CD Vo TKVo Ik Ik TKIk Ira Ira 40 MIN. 60 2 70 25 350 - 2.6 70 47 0.1 75 50 ± 65 900 430 to 1100 4 x 10-14 100 100 40 30 TYP. MAX. UNIT V nA pF pF mV mV/K µA µA %/K µA µA deg nm nm W/√Hz ns ns ϕ λp λ0.1 NEP tr tf BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 1000 Iro - Reverse Dark Current (nA) Ira, rel - Relative Reverse Light Current 1.4 1.2 100 VR = 5 V λ = 950 nm 1.0 10 0.8 VR = 10 V 1 20 40 60 80 100 0.6 0 20 40 60 80 100 94 8403 Tamb - Ambient Temperature (°C) 94 8416 Tamb - Ambient Temperature (°C) Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Document Number: 81521 Rev. 2.0, 08-Sep-08 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 387 BPW34, BPW34S Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant 1000 Ira - Reverse Light Current (µA) CD - Diode Capacitance (pF) 80 100 60 E=0 f = 1 MHz 10 40 1 VR = 5 V λ = 950 nm 20 0.1 0.01 94 8417 0.1 1 10 0 0.1 94 8407 1 10 100 Ee - Irradiance (mW/cm2) VR - Reverse Voltage (V) Fig. 3 - Reverse Light Current vs. Irradiance Fig. 6 - Diode Capacitance vs. Reverse Voltage 1000 S ( λ)rel - Relative Spectral Sensitivity 104 Ira - Reverse Light Current (µA) 1.0 0.8 0.6 0.4 0.2 0 350 550 750 950 1150 λ - Wavelength (nm) 100 10 VR = 5 V 1 0.1 101 94 8418 102 103 EA - Illuminance (lx) 94 8420 Fig. 4 - Reverse Light Current vs. Illuminance Fig. 7 - Relative Spectral Sensitivity vs. Wavelength 100 Srel - Relative Radiant Sensitivity Ira - Reverse Light Current (µA) 0° 10° 20° 30° 1 mW/cm2 0.5 mW/cm2 40° 1.0 0.9 0.8 50° 60° 70° 80° 0.6 0.4 0.2 0 0.2 mW/cm2 10 0.1 mW/cm2 0.05 mW/cm2 λ = 950 nm 0.1 1 10 100 0.7 1 94 8419 VR - Reverse Voltage (V) 94 8406 Fig. 5 - Reverse Light Current vs. Reverse Voltage Fig. 8 - Relative Radiant Sensitivity vs. Angular Displacement www.vishay.com 388 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81521 Rev. 2.0, 08-Sep-08 ϕ - Angular Displacement BPW34, BPW34S Silicon PIN Photodiode, RoHS Compliant Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 96 12186 TUBE PACKAGING DIMENSIONS in millimeters 10.7 Quantity per tube: 45 pcs Quantity per box: 1800 pcs 9.5 214.5 Stopper 18800 Fig. 9 - Drawing Proportions not scaled Document Number: 81521 Rev. 2.0, 08-Sep-08 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 389 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1