BPW46
Vishay Semiconductors
Silicon PIN Photodiode, RoHS Compliant
FEATURES
• Package type: leaded • Package form: side view • Dimensions (L x W x H in mm): 5 x 3 x 6.4 • Radiant sensitive area (in mm2): 7.5 • High photo sensitivity • High radiant sensitivity
94 8632
• Suitable for visible and near infrared radiation • Fast response times • Angle of half sensitivity: ϕ = ± 65° • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with
DESCRIPTION
BPW46 is a PIN photodiode with high speed and high radiant sensitivity in a clear, side view plastic package. It is sensitive to visible and near infrared radiation.
APPLICATIONS
• High speed photo detector
PRODUCT SUMMARY
COMPONENT BPW46 Note Test condition see table “Basic Characteristics” Ira (mA) 50 ϕ (deg) ± 65 λ0.1 (nm) 430 to 1100
ORDERING INFORMATION
ORDERING CODE BPW46 Note MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM Side view
ABSOLUTE MAXIMUM RATINGS
PARAMETER Reverse voltage Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified t≤5s Connected with Cu wire, 0.14 mm2 Tamb ≤ 25 °C TEST CONDITION SYMBOL VR PV Tj Tamb Tstg Tsd RthJA VALUE 60 215 100 - 40 to + 100 - 40 to + 100 260 350 UNIT V mW °C °C °C °C K/W
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For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81524 Rev. 1.5, 08-Sep-08
BPW46
Silicon PIN Photodiode, RoHS Compliant
Vishay Semiconductors
BASIC CHARACTERISTICS
PARAMETER Breakdown voltage Reverse dark current Diode capacitance Open circuit voltage Temperature coefficient of Vo Short circuit current Temperature coefficient of Vk Reverse light current Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth Noise equivalent power Rise time Fall time Note Tamb = 25 °C, unless otherwise specified VR = 10 V, λ = 950 nm VR = 10 V, RL = 1 kΩ, λ = 820 nm VR = 10 V, RL = 1 kΩ, λ = 820 nm TEST CONDITION IR = 100 µA, E = 0 VR = 10 V, E = 0 VR = 0 V, f = 1 MHz, E = 0 VR = 3 V, f = 1 MHz, E = 0 Ee = 1 mW/cm2, λ = 950 nm Ee = 1 mW/cm2, λ = 950 nm EA = 1 klx Ee = 1 mW/cm2, λ = 950 nm Ee = 1 mW/cm2, λ = 950 nm EA = 1 klx, VR = 5 V Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V SYMBOL V(BR) Iro CD CD Vo TKVo Ik Ik TKVk Ira Ira ϕ λp λ0.1 NEP tr tf 40 MIN. 60 2 70 25 350 - 2.6 70 47 0.1 75 50 ± 65 900 430 to 1100 4 x 10-14 100 100 40 30 TYP. MAX. UNIT V nA pF pF mV mV/K µA µA %/K µA µA deg nm nm W/√Hz ns ns
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
Ira, rel - Relative Reverse Light Current
1000
Iro - Reverse Dark Current (nA)
1.4
1.2
100
VR = 5 V λ = 950 nm
1.0
10
0.8
VR = 10 V 1 20 40 60 80 100
0.6 0 20 40 60 80 100
94 8403
Tamb - Ambient Temperature (°C)
94 8416
Tamb - Ambient Temperature (°C)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Document Number: 81524 Rev. 1.5, 08-Sep-08
For technical questions, contact: detectortechsupport@vishay.com
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BPW46
Vishay Semiconductors
Silicon PIN Photodiode, RoHS Compliant
1000 Ira - Reverse Light Current (µA) CD - Diode Capacitance (pF)
80
100
60
E=0 f = 1 MHz
10
40
1
VR = 5 V λ = 950 nm
20
0.1 0.01
94 8417
0.1
1
10
0 0.1
94 8407
1
10
100
Ee - Irradiance (mW/cm2)
VR - Reverse Voltage (V)
Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 6 - Diode Capacitance vs. Reverse Voltage
1000
S ( λ)rel - Relative Spectral Sensitivity
104
Ira - Reverse Light Current (µA)
1.0 0.8 0.6 0.4 0.2 0 350 550 750 950 1150 λ - Wavelength (nm)
100
10 VR = 5 V 1
0.1 101
94 8418
102
103
EA - Illuminance (lx)
94 8420
Fig. 4 - Reverse Light Current vs. Illuminance
Fig. 7 - Relative Spectral Sensitivity vs. Wavelength
100
Srel - Relative Radiant Sensitivity Ira - Reverse Light Current (µA)
0°
10°
20° 30°
1 mW/cm2 0.5 mW/cm2
40° 1.0 0.9 0.8 50° 60° 70° 80° 0.6 0.4 0.2 0
0.2 mW/cm2 10 0.1 mW/cm2 0.05 mW/cm2 λ = 950 nm 0.1 1 10 100
0.7
1
94 8419
VR - Reverse Voltage (V)
94 8406
Fig. 5 - Reverse Light Current vs. Reverse Voltage
Fig. 8 - Relative Radiant Sensitivity vs. Angular Displacement
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For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81524 Rev. 1.5, 08-Sep-08
ϕ - Angular Displacement
BPW46
Silicon PIN Photodiode, RoHS Compliant
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
A
C
technical drawings according to DIN specifications
5
- 0.2
± 0.3
3 - 0.2
Sensitive area (3.2)
(0.7)
± 0.2
- 0.8
9.3
7.2
± 0.2
6.4
20.2
< 0.65 1.5
< 0.7
Area not plane
0.45
± 0.05
0.95 ± 0.2
2.54 nom.
0.4
± 0.05
Drawing-No.: 6.544-5109.01-4 Issue:1; 01.07.96
96 12196
Document Number: 81524 Rev. 1.5, 08-Sep-08
For technical questions, contact: detectortechsupport@vishay.com
www.vishay.com 397
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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