BPW76A_08

BPW76A, BPW76B Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: TO-18 • Dimensions (in mm): Ø 4.7 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation 94 8401 • Fast response times • Angle of half sensitivity: ϕ = ± 40° • Base terminal connected • Hermetically sealed package • Flat glass window • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with DESCRIPTION BPW76 is a silicon NPN phototransistor with high radiant sensitivity in hermetically sealed TO-18 package with base terminal and flat glass window. It is sensitive to visible and near infrared radiation. APPLICATIONS • Detector in electronic control and drive circuits PRODUCT SUMMARY COMPONENT BPW76A BPW76B Note Test condition see table “Basic Characteristics” Ica (mA) 0.4 to 0.8 > 0.6 ϕ (deg) ± 40 ± 40 λ0.1 (nm) 450 to 1080 450 to 1080 ORDERING INFORMATION ORDERING CODE BPW76A BPW76B Note MOQ: minimum order quantity PACKAGING Bulk Bulk REMARKS MOQ: 1000 pcs, 1000 pcs/bulk MOQ: 1000 pcs, 1000 pcs/bulk PACKAGE FORM TO-18 TO-18 ABSOLUTE MAXIMUM RATINGS PARAMETER Collector base voltage Collector emitter voltage Emitter base voltage Collector current Collector peak current Total power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Thermal resistance junction/gase Note Tamb = 25 °C, unless otherwise specified t≤5s Connected with Cu wire, 0.14 mm2 tp/T = 0.5, tp ≤ 10 ms Tamb ≤ 25 °C TEST CONDITION SYMBOL VCBO VCEO VEBO IC ICM PV Tj Tamb Tstg Tsd RthJA RthJC VALUE 80 70 5 50 100 250 125 - 40 to + 125 - 40 to + 125 260 400 150 UNIT V V V mA mA mW °C °C °C °C K/W K/W www.vishay.com 398 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81526 Rev. 1.4, 08-Sep-08 BPW76A, BPW76B Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors 800 Ptot - Total Power Dissipation (mW) 600 RthJC 400 200 RthJA 0 0 25 50 75 100 125 150 94 8342 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Collector emitter breakdown voltage Collector emitter dark current Collector emitter capacitance Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth Collector emitter saturation voltage Turn-on time Turn-off time Cut-off frequency Note Tamb = 25 °C, unless otherwise specified Ee = 1 mW/cm2, λ = 950 nm, IC = 0.1 mA VS = 5 V, IC = 5 mA, RL = 100 Ω VS = 5 V, IC = 5 mA, RL = 100 Ω VS = 5 V, IC = 5 mA, RL = 100 Ω TEST CONDITION IC = 1 mA VCE = 20 V, E = 0 VCE = 5 V, f = 1 MHz, E = 0 SYMBOL V(BR)CEO ICEO CCEO ϕ λp λ0.1 VCEsat ton toff fc MIN. 70 1 6 ± 40 850 450 to 1080 0.15 6 5 110 0.3 100 TYP. MAX. UNIT V nA pF deg nm nm V µs µs kHz TYPE DEDICATED CHARACTERISTICS PARAMETER Collector light current TEST CONDITION Ee = 1 mW/cm2, λ = 950 nm, VCE = 5 V PART BPW76A BPW76B SYMBOL Ica Ica MIN. 0.4 0.6 TYP. MAX. 0.8 UNIT mA mA BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 10 6 I CEO - Collector Dark Current (nA) 2.50 I ca rel - Relative Collector Current 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0 0 10 5 10 4 10 3 10 2 10 1 10 0 20 50 100 150 V CE = 20 V E=0 VCE = 5V E e = 1 mW/cm2 λ = 950 nm 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 94 8343 Tamb - Ambient Temperature (°C) 94 8344 Fig. 2 - Collector Dark Current vs. Ambient Temperature Document Number: 81526 Rev. 1.4, 08-Sep-08 Fig. 3 - Relative Collector Current vs. Ambient Temperature www.vishay.com 399 For technical questions, contact: detectortechsupport@vishay.com BPW76A, BPW76B Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant 10 Ica - Collector Light Current (mA) ton/toff - Turn-on/Turn-off Time (µs) 12 10 8 6 ton 1 VCE = 5 V RL = 100 Ω λ = 950 nm 0.1 VCE = 5 V λ = 950 nm 4 2 0 toff 0.01 0.001 0.01 94 8345 0.1 Ee - Irradiance 1 (mW/cm2) 10 94 8253 0 4 8 12 16 IC - Collector Current (mA) Fig. 4 - Collector Light Current vs. Irradiance Fig. 7 - Turn-on/Turn-off Time vs. Collector Current 1 Ica - Collector Light Current (mA) S (λ)rel - Relative Spectral Sensitivity 100 BPW76A λ = 950 nm E e = 1 mW/cm2 0.5 mW/cm2 1.0 0.8 0.6 0.4 0.2 0 400 600 800 1000 λ - Wavelength (nm) 0.2 mW/cm2 0.1 0.1 mW/cm2 0.05 mW/cm2 0.01 0.1 1 10 94 8346 V CE - Collector Emitter Voltage (V) 94 8348 Fig. 5 - Collector Light Current vs. Collector Emitter Voltage Fig. 8 - Relative Spectral Sensitivity vs. Wavelength CCEO - Collector Ermitter Capacitance (pF) 20 Srel - Relative Sensitivity 16 f = 1 MHz 0° 10° 20° 30° 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 12 8 4 0 0.1 1 10 100 0.6 94 8347 0.4 0.2 0 0.2 0.4 0.6 94 8247 VCE - Collector Ermitter Voltage (V) Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage Fig. 9 - Relative Radiant Sensitivity vs. Angular Displacement www.vishay.com 400 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81526 Rev. 1.4, 08-Sep-08 BPW76A, BPW76B Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 2.54 nom. B E C Ø 4.7 + 0.05 - 0.1 ± 0.25 Chip position (2.5) 5.2 0.45 + 0.02 - 0.05 13.2 ± 0.7 5.5 ± 0.15 technical drawings according to DIN specifications Drawing-No.: 6.503-5004.01-4 Issue:1; 01.07.96 96 12175 3.9 ± 0.05 Lens Document Number: 81526 Rev. 1.4, 08-Sep-08 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 401 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1