BPW85C

BPW85A, BPW85B, BPW85C Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1 • Dimensions (in mm): Ø 3 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation 20815 • Fast response times • Angle of half sensitivity: ϕ = ± 25° • Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with DESCRIPTION BPW85 is a silicon NPN phototransistor with high radiant sensitivity in clear, T-1 plastic package. It is sensitive to visible and near infrared radiation. APPLICATIONS • Detector in electronic control and drive circuits PRODUCT SUMMARY COMPONENT BPW85A BPW85B BPW85C Note Test condition see table “Basic Characteristics” Ica (mA) 0.8 to 2.5 1.5 to 4 3 to 8 ϕ (deg) ± 25 ± 25 ± 25 λ0.1 (nm) 450 to 1080 450 to 1080 450 to 1080 ORDERING INFORMATION ORDERING CODE BPW85A BPW85B BPW85C Note MOQ: minimum order quantity PACKAGING Bulk Bulk Bulk REMARKS MOQ: 5000 pcs, 5000 pcs/bulk MOQ: 5000 pcs, 5000 pcs/bulk MOQ: 5000 pcs, 5000 pcs/bulk PACKAGE FORM T-1 T-1 T-1 ABSOLUTE MAXIMUM RATINGS PARAMETER Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified t ≤ 3 s, 2 mm from case Connected with Cu wire Ø 0.14 mm2 tp/T = 0.5, tp ≤ 10 ms Tamb ≤ 55 °C TEST CONDITION SYMBOL VCEO VECO IC ICM PV Tj Tamb Tstg Tsd RthJA VALUE 70 5 50 100 100 100 - 40 to + 100 - 40 to + 100 260 450 UNIT V V mA mA mW °C °C °C °C K/W www.vishay.com 414 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81531 Rev. 1.8, 05-Sep-08 BPW85A, BPW85B, BPW85C Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors 125 PV - Power Dissipation (mW) 100 75 RthJA = 450 K/W 50 25 0 0 94 8308 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Collector emitter breakdown voltage Collector emitter dark current Collector emitter capacitance Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth Collector emitter saturation voltage Turn-on time Turn-off time Cut-off frequency Note Tamb = 25 °C, unless otherwise specified Ee = 1 mW/cm2, λ = 950 nm, IC = 0.1 mA VS = 5 V, IC = 5 mA, RL = 100 Ω VS = 5 V, IC = 5 mA, RL = 100 Ω VS = 5 V, IC = 5 mA, RL = 100 Ω TEST CONDITION IC = 1 mA VCE = 20 V, E = 0 VCE = 5 V, f = 1 MHz, E = 0 SYMBOL V(BR)CEO ICEO CCEO ϕ λp λ0.1 VCEsat ton toff fc 2.0 2.3 180 MIN. 70 1 3 ± 25 850 450 to 1080 0.3 200 TYP. MAX. UNIT V nA pF deg nm nm V µs µs kHz TYPE DEDICATED CHARACTERISTICS PARAMETER Collector light current TEST CONDITION Ee = 1 mW/cm2, λ = 950 nm, VCE = 5 V PART BPW85A BPW85B BPW85C SYMBOL Ica Ica Ica MIN. 0.8 1.5 3.0 TYP. MAX. 2.5 4.0 8.0 UNIT mA mA mA Document Number: 81531 Rev. 1.8, 05-Sep-08 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 415 BPW85A, BPW85B, BPW85C Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 104 ICEO - Collector Dark Current (nA) Ica - Collector Light Current (mA) 10 λ 1 BPW 85 A = 950 nm E e = 1 mW/cm2 103 VCE = 20 V 102 0.5 mW/cm2 0.2 mW/cm2 0.1 mW/cm2 0.1 0.05 mW/cm2 101 10 94 8304 20 40 60 80 100 0.01 0.1 94 8275 Tamb - Ambient Temperature (°C) 100 1 10 VCE - Collector Emitter Voltage (V) Fig. 2 - Collector Dark Current vs. Ambient Temperature Fig. 5 - Collector Light Current vs. Collector Emitter Voltage 2.0 10 Ica rel - Relative Collector Current 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 20 40 60 80 100 VCE = 5 V Ee = 1 mW/cm2 λ = 950 nm Ica - Collector Light Current (mA) BPW 85 B Ee = 1 mW/cm2 0.5 mW/cm2 1 0.2 mW/cm2 0.1 mW/cm2 0.05 mW/cm2 0.1 λ = 950 nm 0.01 0.1 1 10 VCE - Collector Emitter Voltage (V) 100 94 8239 Tamb - Ambient Temperature (°C) 94 8276 Fig. 3 - Relative Collector Current vs. Ambient Temperature Fig. 6 - Collector Light Current vs. Collector Emitter Voltage 10 Ica - Collector Light Current (mA) Ica - Collector Light Current (mA) 10 BPW85B 1 E e = 1 mW/cm2 0.5 mW/cm2 1 0.2 mW/cm2 0.1 mW/cm2 0.05 mW/cm2 0.1 BPW85C BPW85A 0.1 0.01 0.01 94 8271 VCE = 5 V λ = 950 nm 0.1 1 10 0.01 0.1 94 8277 BPW 85 C λ = 950 nm 100 1 10 VCE - Collector Emitter Voltage (V) Ee - Irradiance (mW/cm2) Fig. 4 - Collector Light Current vs. Irradiance Fig. 7 - Collector Light Current vs. Collector Emitter Voltage www.vishay.com 416 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81531 Rev. 1.8, 05-Sep-08 BPW85A, BPW85B, BPW85C Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors CCEO - Collector Emitter Capacitance (pF) 10 f = 1 MHz 8 Srel - Relative Radiant Sensitivity 0° 10° 20° 30° 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.6 0.4 0.2 0 6 4 2 0 0.1 1 10 100 94 8295 94 8294 VCE - Collector Emitter Voltage (V) Fig. 8 - Collector Emitter Capacitance vs. Collector Emitter Voltage Fig. 11 - Relative Radiant Sensitivity vs. Angular Displacement 8 ton/toff - Turn-on/Turn-off Time (µs) 6 VCE = 5 V RL = 100 Ω λ = 950 nm 4 toff 2 ton 0 0 2 4 6 8 10 12 14 94 8293 IC - Collector Current (mA) Fig. 9 - Turn-on/Turn-off Time vs. Collector Current S (λ)rel - Relative Spectral Sensitivity 1.0 0.8 0.6 0.4 0.2 0 400 600 800 1000 λ - Wavelength (nm) 94 8348 Fig. 10 - Relative Spectral Sensitivity vs. Wavelength Document Number: 81531 Rev. 1.8, 05-Sep-08 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 417 ϕ - Angular Displacement BPW85A, BPW85B, BPW85C Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant PACKAGE DIMENSIONS in millimeters 96 12190 www.vishay.com 418 For technical questions, contact: detectortechsupport@vishay.com Document Number: 81531 Rev. 1.8, 05-Sep-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1