BS250

TP0610L/T, VP0610L/T, BS250 Vishay Siliconix P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number TP0610L TP0610T VP0610L VP0610T BS250 V(BR)DSS Min (V) −60 −60 −60 −60 −45 rDS(on) Max (W) 10 @ VGS = −10 V 10 @ VGS = −10 V 10 @ VGS = −10 V 10 @ VGS = −10 V 14 @ VGS = −10 V VGS(th) (V) −1 to −2.4 −1 to −2.4 −1 to −3.5 −1 to −3.5 −1 to −3.5 ID (A) −0.18 −0.12 −0.18 −0.12 −0.18 FEATURES D D D D D High-Side Switching Low On-Resistance: 8 W Low Threshold: −1.9 V Fast Switching Speed: 16 ns Low Input Capacitance: 15 pF BENEFITS D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Switching Easily Driven Without Buffer APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Power Supply, Converter Circuits D Motor Control TO-226AA (TO-92) S G 1 Device Marking Front View TP0610L “S” TP 0610L xxll TO-92-18RM (TO-18 Lead Form) D G 1 Device Marking Front View BS250 2 “S” BS 250 xxll “S” = Siliconix Logo xxll = Date Code G 1 3 S 2 D TO-236 (SOT-23) Marking Code: TP0610T: TOwll VP0610T: VOwll w = Week Code lL = Lot Traceability Top View TP0610T VP0610T 2 D 3 Top View TP0610L VP0610L VP0610L “S” VP 0610L xxll S 3 Top View BS250 “S” = Siliconix Logo xxll = Date Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. For applications information see AN804. Document Number: 70209 S-41260—Rev. H, 05-Jul-04 www.vishay.com TA= 25_C TA= 100_C TA= 25_C TA= 100_C Symbol VDS VGS ID IDM PD RthJA TJ, Tstg TP0610L −60 "30 −0.18 −0.11 −0.8 0.8 0.32 156 TP0610T −60 "30 −0.12 −0.07 −0.4 0.36 0.14 350 VP0610L −60 "30 −0.18 −0.11 −0.8 0.8 0.32 156 −55 to 150 VP0610T −60 "30 −0.12 −0.07 −0.4 0.36 0.14 350 BS250 −45 "25 −0.18 Unit V A 0.83 150 W _C/W _C 1 TP0610L/T, VP0610L/T, BS250 Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits TP0610L/T VP0610L/T BS250 Parameter Static Drain Source Drain-Source Breakdown Voltage Gate-Threshold Voltage Symbol Test Conditions Typa Min Max Min Max Min Max Unit V(BR)DSS VGS(th) VGS = 0 V, ID = −10 mA VGS = 0 V, ID = −100 mA VDS = VGS, ID = −1 mA VDS = 0 V, VGS = "20 V −70 −60 −60 −45 V −3.5 −1.9 −1 −2.4 "10 "50 −1 −3.5 "10 −1 Gate-Body Leakage y g IGSS VDS = 0 V, VGS = "20 V, TJ = 125_C VDS = 0 V, VGS = "15 V VDS = −48 V, VGS = 0 V nA "20 −1 −200 −0.5 mA −1 −200 Zero G Gate Voltage Drain Current IDSS VDS = −48 V, VGS = 0 V, TJ = 125_C VDS = −25 V, VGS = 0 V VDS = −10 V, VGS = −4.5 V −180 L Suffix T Suffix 11 L Suffix L Suffix T Suffix L Suffix T Suffix 8 15 6.5 20 90 −1.1 80 60 −750 −50 On-State Drain OS Currentb ID(on) VDS = −10 V VGS = −10 V 10 V, 10 VGS = −4.5 V, ID = −25 mA −600 −220 25 10 20 10 10 20 10 14 mA Drain-Source On-Resistanceb rDS( ) DS(on) VGS = −10 V, ID = −0.5 A VGS = −10 V, ID = −0.5 A, TJ = 125_C VGS = −10 V, ID = −0.2 A VDS = −10 V, ID = −0.5 A VDS = −10 V, ID = −0.1 A IS = −0.5 A, VGS = 0 V W Forward Transconductanceb Diode Forward Voltage gf fs VSD 70 mS V Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VDS = −25 V, VGS = 0 V f = 1 MHz 15 10 3 60 25 5 60 25 5 pF Switchingc Turn-On Time Turn-Off Time tON tOFF VDD = −25 V, RL = 133 W 25 V, ID ^ −0.18 A, VGEN = −10 V, Rg = 25 W 8 8 10 10 ns Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature. VPDS06 www.vishay.com 2 Document Number: 70209 S-41260—Rev. H, 05-Jul-04 TP0610L/T, VP0610L/T, BS250 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 1.0 VGS = 10 V 7V 0.8 I D − Drain Current (A) I D − Drain Current (mA) 8V 900 25_C 600 125_C 1200 TJ = −55_C Transfer Characteristics 0.6 6V 0.4 5V 0.2 4V 0.0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V) 300 0 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) 40 VGS = 0 V On-Resistance vs. Drain Current 20 Capacitance r DS(on) − On-Resistance ( W ) 16 VGS = 4.5 V C − Capacitance (pF) 32 Ciss 24 12 VGS = 5 V 8 VGS = 10 V 16 Coss 8 Crss 4 0 0 200 400 600 800 1000 ID − Drain Current (mA) 0 0 5 10 15 20 25 VDS − Drain-to-Source Voltage (V) 15 V GS − Gate-to-Source Voltage (V) ID = 500 mA 12 Gate Charge 1.8 1.5 VDS = 30 V rDS(on) − On-Resiistance (Normalized) VDS = 48 V 1.2 0.9 0.6 0.3 0.0 −50 On-Resistance vs. Junction Temperature VGS = 10 V @ 500 mA 9 VGS = 4.5 V @ 25 mA 6 3 0 0.0 0.3 0.6 0.9 1.2 1.5 1.8 −25 0 25 50 75 100 125 150 Qg − Total Gate Charge (nC) TJ − Junction Temperature (_C) Document Number: 70209 S-41260—Rev. H, 05-Jul-04 www.vishay.com 3 TP0610L/T, VP0610L/T, BS250 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 1000 VGS = 0 V r DS(on) − On-Resistance ( W ) 8 ID = 500 mA 10 On-Resistance vs. Gate-Source Voltage I S − Source Current (A) 100 TJ = 125_C 6 4 10 TJ = 25_C TJ = −55_C ID = 200 mA 2 1 0.00 0.3 0.6 0.9 1.2 1.5 VSD − Source-to-Drain Voltage (V) 0 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) Threshold Voltage Variance Over Temperature 0.5 0.4 V GS(th) Variance (V) 0.3 Power (W) 0.2 0.1 −0.0 −0.1 −0.2 −0.3 −50 0.5 0 −25 0 25 50 75 100 125 150 0.01 2 1.5 ID = 250 mA 3 2.5 Single Pulse Power, Junction-to-Ambient 1 TA = 25_C 0.1 1 Time (sec) 10 100 600 TJ − Junction Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 350_C/W t1 t2 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 70209 S-41260—Rev. H, 05-Jul-04