BS250KL

TP0610KL/BS250KL New Product Vishay Siliconix P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS(min) (V) −60 rDS(on) (W) 6 @ VGS = −10 V 10 @ VGS = −4.5 V VGS(th) (V) −1 to −3 0 3.0 ID (A) −0.27 −0.21 D TrenchFETr Power MOSFET D ESD Protected: 2000 V APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Power Supply, Converter Circuits D Motor Control TO-226AA (TO-92) S G 1 Device Marking Front View 2 “S” TP 0610KL xxyy “S” = Siliconix Logo xxyy = Date Code TO-92-18RM (TO-18 Lead Form) D G 1 Device Marking Front View 2 “S” BS 250KL xxyy “S” = Siliconix Logo xxyy = Date Code G 100 W D D 3 Top View S 3 Top View Ordering Information: TP0610KL-TR1 Ordering Information: BS250KL-TR1 S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulse Drain Currenta TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM PD Limit −60 "20 −0.27 −0.22 −1.0 0.8 0.51 156 −55 to 150 Unit V A Power Dissipation Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. Document Number: 72712 S-40244—Rev. A, 16-Feb-04 W _C/W _C RthJA TJ, Tstg www.vishay.com 1 TP0610KL/BS250KL Vishay Siliconix New Product SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage V(BR)DSS VGS(th) VGS = 0 V, ID = −10 µA VDS = VGS, ID = −250 µA VDS = 0 V, VGS = "20 V Gate-Body Gate Body Leakage IGSS VDS = 0 V, VGS = "10 V VDS = 0 V, VGS = "10 V, TJ = 85_C VDS = 0 V, VGS = "5 V Zero Gate Voltage Drain Current On-State On State Drain Currenta IDSS ID( ) D(on) VDS = −60 V, VGS = 0 V VDS = −60 V, VGS = 0 V, TJ = 55_C VDS = −10 V, VGS = −4.5 V VDS = −10 V, VGS = −10 V VGS = −4.5 V, ID = −25 mA Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltagea rDS(on) gfs VSD VGS = −10 V, ID = −500 mA VGS = −10 V, ID = −500 mA, TJ = 125_C VDS = −10 V, ID = −100 mA IS = −200 mA, VGS = 0 V −50 −600 5.5 3.1 4.7 180 −0.9 −1.4 10 6 9 mS V W −60 −1 −2.1 −3.0 "10 "200 "500 "100 −1 −10 mA mA nA V mA Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Turn On Time Turn-Off Turn Off Time Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = −25 V, RL = 150 W ID ^ −150 mA VGEN = −10 V mA, Rg = 10 W VDS = −30 V, VGS = −15 V, ID ^ −500 mA 1.7 0.26 0.46 285 2.4 15.5 21 12.5 5 25 35 20 ns W 3 nC Notes a. Pulse test: PW v300 ms duty cycle v2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values. 1.0 Output Characteristics VGS = 10 V 1200 Transfer Characteristics TJ = −55_C 0.8 I D − Drain Current (A) 8V 7V I D − Drain Current (mA) 900 25_C 600 125_C 0.6 6V 0.4 5V 0.2 4V 0.0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V) 300 0 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) Document Number: 72712 S-40244—Rev. A, 16-Feb-04 www.vishay.com 2 TP0610KL/BS250KL New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values. Vishay Siliconix 20 On-Resistance vs. Drain Current 40 VGS = 0 V Capacitance r DS(on) − On-Resistance ( W ) 16 VGS = 4.5 V C − Capacitance (pF) 32 Ciss 24 12 VGS = 5 V 8 VGS = 10 V 16 Coss 8 Crss 4 0 0 200 400 600 800 1000 ID − Drain Current (mA) 0 0 5 10 15 20 25 VDS − Drain-to-Source Voltage (V) 15 V GS − Gate-to-Source Voltage (V) ID = 500 mA 12 Gate Charge 1.8 1.5 VDS = 30 V VDS = 48 V rDS(on) − On-Resiistance (Normalized) 1.2 0.9 0.6 0.3 0.0 −50 On-Resistance vs. Junction Temperature VGS = 10 V @ 500 mA 9 VGS = 4.5 V @ 25 mA 6 3 0 0.0 0.3 0.6 0.9 1.2 1.5 1.8 −25 0 25 50 75 100 125 150 Qg − Total Gate Charge (nC) TJ − Junction Temperature (_C) 10 Source-Drain Diode Forward Voltage 1000 VGS = 0 V r DS(on) − On-Resistance ( W ) On-Resistance vs. Gate-Source Voltage 8 ID = 500 mA I S − Source Current (A) 100 TJ = 125_C 6 4 10 TJ = 25_C TJ = −55_C ID = 200 mA 2 1 0.00 0.3 0.6 0.9 1.2 1.5 VSD − Source-to-Drain Voltage (V) Document Number: 72712 S-40244—Rev. A, 16-Feb-04 0 0 2 4 6 8 10 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 TP0610KL/BS250KL Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values. Threshold Voltage Variance Over Temperature 0.5 0.4 V GS(th) Variance (V) 0.3 Power (W) 0.2 0.1 −0.0 −0.1 −0.2 −0.3 −50 0 −25 0 25 50 75 100 125 150 0.01 12 ID = 250 mA 20 Single Pulse Power, Junction-to-Ambient 16 8 4 0.1 1 Time (sec) 10 100 600 TJ − Junction Temperature (_C) 10 Safe Operating Area IDM Limited rDS(on) Limited 1 I D − Drain Current (A) 1 ms 10 ms 0.1 ID(on) Limited 0.01 TA = 25_C Single Pulse BVDSS Limited 0.001 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) 100 ms 1s 10 s dc 2 Normalized Effective Transient Thermal Impedance 1 Normalized Thermal Transient Impedance, Junction-to-Ambient Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 156_C/W Single Pulse 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 72712 S-40244—Rev. A, 16-Feb-04