BU1006A-E351

New Product BU1006A thru BU1010A Vishay General Semiconductor Enhanced Power Bridge Rectifiers PowerBridge TM FEATURES • UL recognition file number E309391 (QQQX2) UL 1557 (see *) • Thin single in-line package + ~ ~ ~ ~ + • Available for BU-5S lead forming option (part number with “5S” suffix, e.g. BU1006A5S) • Superior thermal conductivity • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Case Style BU + ~ ~ TYPICAL APPLICATIONS General purpose use in ac-to-dc bridge full wave rectification for switching power supply, home appliances and white-goods applications. MECHANICAL DATA Case: BU Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked on body Mounting Torque: 10 cm-kg (8.8 inches-lbs) max. Recommended Torque: 5.7 cm-kg (5 inches-lbs) * Tested to UL standard for safety electrically isolated semiconductor devices. UL 1557 4th edition. Dielectric tested to maximum case, storage and junction temperature to 150 °C to withstand 1500 V. Epoxy meets UL 94V-0 flammability rating. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM IR VF at IF = 5 A TJ max. 10 A 600 V, 800 V, 1000 V 90 A 5 µA 0.94 V 150 °C MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Average rectified forward current (Fig. 1, 2) Non-repetitive peak forward surge current 8.3 ms single sine-wave, TJ = 25 °C Rating for fusing (t < 8.3 ms) TJ = 25 °C Operating junction and storage temperature range Notes: (1) With 60 W air cooled heatsink (2) Without heatsink, free air TC = 90 °C TA = 25 °C (2) (1) SYMBOL VRRM IO IFSM I 2t TJ, TSTG BU1006A 600 BU1008A 800 10 3.0 90 33 - 55 to + 150 BU1010A 1000 UNIT V A A A 2s °C Document Number: 84800 Revision: 11-Mar-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 New Product BU1006A thru BU1010A Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage per diode (1) Maximum reverse current per diode Typical junction capacitance per diode Note: (1) Pulse test: 300 µs pulse width, 1 % duty cycle TEST CONDITIONS IF = 5.0 A rated VR 4.0 V, 1 MHz TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C SYMBOL VF IR CJ TYP. 1.02 0.94 45 30 MAX. 1.10 1.00 5.0 250 UNIT V µA pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance Notes: (1) With 60 W air cooled heatsink (2) Without heatsink, free air SYMBOL RθJC RθJA (2) (1) BU1006A BU1008A 3.0 20 BU1010A UNIT °C/W ORDERING INFORMATION (Example) PREFERRED P/N BU1006A-E3/45 BU1006A-E3/51 BU1006A5S-E3/45 UNIT WEIGHT (g) 4.48 4.48 4.48 PREFERRED PACKAGE CODE 45 51 45 BASE QUANTITY 20 250 20 DELIVERY MODE Tube Paper tray Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 12 4 10 With Heatsink Sine-Wave, R-Load TC Measured at Device Bottom TC 4 TC Average Forward Rectified Current (A) Average Forward Output Current (A) 3 8 6 2 1 2 Without Heatsink Sine-Wave, R-Load Free Air, TA 0 0 20 40 60 80 100 120 140 160 0 0 25 50 75 100 125 150 Case Temperature (°C) Ambient Temperature (°C) Figure 1. Derating Curve Output Rectified Current Figure 2. Forward Current Derating Curve www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 84800 Revision: 11-Mar-08 New Product BU1006A thru BU1010A Vishay General Semiconductor 24 1000 Instantaneous Reverse Current (µA) 20 TJ = 150 °C 100 TJ = 125 °C Average Power Loss (W) 16 10 12 1 8 4 0.1 TJ = 25 °C 0 0 1 2 3 4 5 6 7 8 9 10 11 0.01 10 20 30 40 50 60 70 80 90 100 Average Forward Current (A) Percent of Rated Peak Reverse Voltage (%) Figure 3. Average Rectified Forward Current Figure 5. Typical Reverse Characteristics Per Diode 100 100 TJ = 150 °C Instantaneous Forward Current (A) 10 1 TJ = 125 °C 0.1 TJ = 25 °C Junction Capacitance (pF) 10 1.2 1.4 0.01 0.2 0.4 0.6 0.8 1.0 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 4. Typical Forward Characteristics Per Diode Figure 6. Typical Junction Capacitance Per Diode Document Number: 84800 Revision: 11-Mar-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 New Product BU1006A thru BU1010A Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Case Type BU 0.880 (22.3) 0.860 (21.8) 0.020R (Typ.) 0.125 (3.2) x 45° Chamfer 0.160 (4.1) 0.140 (3.5) 0.310 (7.9) 0.290 (7.4) 9° Typ. 0.161 (4.10) 0.142 (3.60) View A 0.080 (2.03) 0.060 (1.52) 0.075 (1.9) R 0.740 (18.8) 0.720 (18.3) + ~ ~ - 0.085 (2.16) 0.065 (1.65) 5° Typ. 0.710 (18.0) 0.690 (17.5) 0.050 (1.27) 0.040 (1.02) 0.100 (2.54) 0.085 (2.16) 0.048 (1.23) 0.039 (1.00) 0.190 (4.83) 0.210 (5.33) 0.080 (2.03) 0.065 (1.65) 0.024 (0.62) 0.020 (0.52) Polarity shown on front side of case, positive lead beveled corner 0.055 (1.385) Ref. 0.094 (2.39) x 45° Ref. R 0.11 (2.78) Ref. 0.64 (16.28) Ref. 0.62 (15.78) Ref. R 0.10 (2.60) Ref. 0.055 (1.385) Ref. www.vishay.com 4 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 84800 Revision: 11-Mar-08 New Product BU1006A thru BU1010A Vishay General Semiconductor FORMING SPECIFICATION: BU-5S in inches (millimeters) 0.161 (4.10) 0.142 (3.60) 0.880 (22.3) 0.860 (21.8) 0.125 (3.2) x 45° Chamfer 0.020R (Typ.) 0.310 (7.9) 0.290 (7.4) 0.740 (18.8) 0.720 (18.3) 9° Typ. 0.160 (4.1) 0.140 (3.5) 0.075 (1.9)R 0.080 (2.03) 0.060 (1.52) + ~~ - 0.085 (2.16) 0.065 (1.65) 0.100 (2.54) 0.085 (2.16) 0.219 (5.55) Max. 5° Typ. 0.050 (1.27) 0.040 (1.02) 0.213 (5.40) 0.173 (4.40) 0.417 (10.60) 0.370 (9.40) 0.134 (3.40) 0.087 (2.20) 0.319 (8.10) 0.272 (6.90) 0.319 (8.10) 0.272 (6.90) 0.315 (8.0) 0.276 (7.0) 0.024 (0.62) 0.020 (0.52) 0.080 (2.03) 0.065 (1.65) APPLICATION NOTE (1) Device UL approved for safety use dielectric strength of 1500 V. (2) If device is mounted in Floating Ground (F. G.) application, insulator is recommended to use to meet safety requirement. (3) Heat sink shape recommendation: (3) Heat Sink 2.5 mm Min. 2.5 mm Min. By Safety Requirements Document Number: 84800 Revision: 11-Mar-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1