BU2008

New Product BU2006 thru BU2010 Vishay General Semiconductor Enhanced PowerBridge® Rectifiers PowerBridge® + Case Style BU ~ ~ ~ ~ + FEATURES • UL recognition file number E309391 (QQQX2) UL 1557 (see *) • Thin single in-line package • Available for BU-5S lead forming option (part number with “5S” suffix, e.g. BU20065S) • Superior thermal conductivity • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition TYPICAL APPLICATIONS General purpose use in AC/DC bridge full wave rectification for switching power supply, home appliances and white-goods applications. MECHANICAL DATA Case: BU Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: As marked on body Mounting Torque: 10 cm-kg (8.8 inches-lbs) max. Recommended Torque: 5.7 cm-kg (5 inches-lbs) + ~ ~ - * Tested to UL standard for safety electrically isolated semiconductor devices. UL 1557 4th edition. Dielectric tested to maximum case, storage and junction temperature to 150 °C to withstand 1500 V. Epoxy meets UL 94 V-0 flammability rating. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM IR VF at IF = 10 A TJ max. 20 A 600 V, 800 V, 1000 V 240 A 5 µA 0.85 V 150 °C MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Average rectified forward current (Fig. 1, 2) Non-repetitive peak forward surge current 8.3 ms single sine-wave, TJ = 25 °C Rating for fusing (t < 8.3 ms) TJ = 25 °C Operating junction and storage temperature range Notes (1) (2) (1) SYMBOL VRRM TC = 61 °C TA = 25 °C (2) IO IFSM I2 t TJ, TSTG BU2006 600 BU2008 800 20 3.5 240 239 - 55 to + 150 BU2010 1000 UNIT V A A A 2s °C With 60 W air cooled heatsink Without heatsink, free air Document Number: 89298 Revision: 15-Mar-11 www.vishay.com For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product BU2006 thru BU2010 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage per diode (1) Maximum reverse current per diode Typical junction capacitance per diode Note (1) TEST CONDITIONS IF = 1 0 A rated VR 4.0 V, 1 MHz TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C SYMBOL VF IR CJ TYP. 0.95 0.85 110 95 MAX. 1.05 0.95 5.0 350 - UNIT V µA pF Pulse test: 300 µs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance Notes (1) (2) SYMBOL RJC RJA (2) (1) BU2006 BU2008 2.4 20 BU2010 UNIT °C/W With 60 W air cooled heatsink Without heatsink, free air ORDERING INFORMATION (Example) PREFERRED P/N BU2006-M3/45 BU2006-M3/51 BU20065S-M3/45 UNIT WEIGHT (g) 4.76 4.76 4.76 PREFERRED PACKAGE CODE 45 51 45 BASE QUANTITY 20 250 20 DELIVERY MODE Tube Paper tray Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 24 5 20 Average Forward Rectified Current (A) Average Forward Output Current (A) 4 16 12 With Heatsink Sine-Wave, R-Load TC Measured at Device Bottom TC TC 3 2 Without Heatsink Sine-Wave, R-Load Free Air, TA 8 4 1 0 0 25 50 75 100 125 150 0 0 25 50 75 100 125 150 Case Temperature (°C) Ambient Temperature (°C) Figure 1. Derating Curve Output Rectified Current Figure 2. Forward Current Derating Curve www.vishay.com 2 Document Number: 89298 For technical questions within your region, please contact one of the following: Revision: 15-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product BU2006 thru BU2010 Vishay General Semiconductor 50 1000 Instantaneous Reverse Current (µA) Forward Power Dissipation (W) TJ = 150 °C 100 TJ = 125 °C 10 40 30 20 1 TJ = 25 °C 10 0 0 4 8 12 16 20 24 0.1 10 20 30 40 50 60 70 80 90 100 Average Forward Current (A) Percent of Rated Peak Reverse Voltage (%) Figure 3. Forward Power Dissipation Figure 5. Typical Reverse Characteristics Per Diode 100 1000 TJ = 150 °C Instantaneous Forward Current (A) 10 TJ = 125 °C 1 Junction Capacitance (pF) 1.0 1.1 100 0.1 TJ = 25 °C 0.01 0.3 10 0.4 0.5 0.6 0.7 0.8 0.9 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 4. Typical Forward Characteristics Per Diode Figure 6. Typical Junction Capacitance Per Diode Document Number: 89298 Revision: 15-Mar-11 www.vishay.com For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product BU2006 thru BU2010 Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Case Type BU 0.880 (22.3) 0.860 (21.8) 0.020R (TYP.) 0.125 (3.2) x 45° Chamfer 0.160 (4.1) 0.140 (3.5) 0.310 (7.9) 0.290 (7.4) 0.740 (18.8) 0.720 (18.3) 0.085 (2.16) 0.065 (1.65) 5° TYP. 0.048 (1.23) 0.039 (1.00) 0.710 (18.0) 0.690 (17.5) 0.050 (1.27) 0.040 (1.02) 0.100 (2.54) 0.085 (2.16) 9° TYP. 0.161 (4.10) 0.142 (3.60) View A 0.080 (2.03) 0.060 (1.52) 0.075 (1.9) R + ~ ~ - 0.190 (4.83) 0.210 (5.33) 0.080 (2.03) 0.065 (1.65) 0.028 (0.72) 0.020 (0.52) Polarity shown on front side of case, positive lead beveled corner 0.055 (1.385) REF. 0.094 (2.39) x 45° REF. R 0.11 (2.78) REF. 0.64 (16.28) REF. 0.62 (15.78) REF. R 0.10 (2.60) REF. 0.055 (1.385) REF. www.vishay.com 4 Document Number: 89298 For technical questions within your region, please contact one of the following: Revision: 15-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product BU2006 thru BU2010 Vishay General Semiconductor FORMING SPECIFICATION: BU-5S in inches (millimeters) 0.161 (4.10) 0.142 (3.60) 0.880 (22.3) 0.860 (21.8) 0.125 (3.2) x 45° Chamfer 0.020R (TYP.) 0.310 (7.9) 0.290 (7.4) 0.740 (18.8) 0.720 (18.3) 9° TYP. 0.160 (4.1) 0.140 (3.5) 0.075 (1.9) R 0.080 (2.03) 0.060 (1.52) + ~~ - 0.085 (2.16) 0.065 (1.65) 0.100 (2.54) 0.085 (2.16) 0.219 (5.55) MAX. 5° TYP. 0.050 (1.27) 0.040 (1.02) 0.213 (5.40) 0.173 (4.40) 0.417 (10.60) 0.370 (9.40) 0.134 (3.40) 0.087 (2.20) 0.319 (8.10) 0.272 (6.90) 0.319 (8.10) 0.272 (6.90) 0.315 (8.0) 0.276 (7.0) 0.028 (0.72) 0.020 (0.52) 0.080 (2.03) 0.065 (1.65) APPLICATION NOTE (1) Device UL approved for safety use dielectric strength of 1500 V. (2) If device is mounted in Floating Ground (F. G.) application, insulator is recommended to use to meet safety requirement. (3) Heat sink shape recommendation: (3) Heatsink 2.5 mm MIN. 2.5 mm MIN. By Safety Requirements Document Number: 89298 Revision: 15-Mar-11 www.vishay.com For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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