BY228-13 , BY228-15
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction • Hermetically sealed package • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition
949588
APPLICATIONS
• High voltage rectification • Effficiency diode in horizontal deflection circuits
MECHANICAL DATA
Case: SOD-64 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 858 mg
PARTS TABLE
PART BY228-13 BY228-15 TYPE DIFFERENTIATION VR = 1000 V; IFAV = 3 A VR = 1200 V; IFAV = 3 A PACKAGE SOD-64 SOD-64
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER Peak reverse voltage, non repetitive Reverse voltage Peak forward surge current Average forward current Junction temperature Storage temperature range Non repetitive reverse avalanche energy l (BR)R = 0.4 A TEST CONDITION lR = 100 μA See electrical characteristics tp = 10 ms, half sine wave PART BY228-13 BY228-15 BY228-13 BY228-15 SYMBOL VRSM VRSM VR VR IFSM IFAV Tj Tstg ER VALUE 1300 1500 1000 1200 50 3 140 - 55 to + 175 10 UNIT V V V V A A °C °C mJ
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER Junction ambient TEST CONDITION On PC board with spacing 25 mm SYMBOL RthJA VALUE 70 UNIT K/W
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For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 86004 Rev. 1.7, 09-Aug-10
BY228-13 , BY228-15
Standard Avalanche Sinterglass Diode
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER Forward voltage TEST CONDITION IF = 5 A VR = 1000 V Reverse current VR = 1200 V VR = 1000 V, Tj = 140 °C VR = 1200 V, Tj = 140 °C Total reverse recovery time Reverse recovery time lF = 1 A, - dIF/dt = 0.05 A/μs IF = 0.5 A, IR = 1 A, iR = 0.25 A BY228-13 BY228-15 BY228-13 BY228-15 PART SYMBOL VF IR IR IR IR trr trr MIN. TYP. 2 2 MAX 1.5 5 5 140 140 20 2 UNIT V μA μA μA μA μs μs
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
RthJA - Ther. Resist. Junction/Ambient (K/W)
40
3.5
IFAV - Average Forward Current (A)
VR = VRRM 3.0 2.5 2.0 1.5 1.0 0.5 0 RthJA = 70 K/W PCB: d = 25 mm 0 25 50 75 100 125 150 half sine wave RthJA = 25 K/W l = 10 mm
30
20 l l
10
TL = constant 0 0
94 9081
5
10
15
20
25
30 16403
l - Lead Length (mm)
Tamb - Ambient Temperature (°C)
Fig. 1 - Typ. Thermal Resistance vs. Lead Length
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
100
1000 VR = VRRM 100
IF - Forward Current (A)
10 Tj = 150 °C 1 Tj = 25 °C 0.1
IR - Reverse Current (μA)
2.0 2.5 3.0
10
0.01
0.001 0.0
16402
1 0.5 1.0 1.5 25
16404
50
75
100
125
150
VF - Forward Voltage (V)
Tj - Junction Temperature (°C)
Fig. 2 - Forward Current vs. Forward Voltage
Fig. 4 - Reverse Current vs. Junction Temperature
Document Number: 86004 Rev. 1.7, 09-Aug-10
For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com 145
BY228-13 , BY228-15
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
PR - Reverse Power Dissipation (mW)
350 VR = VRRM 300 250 PR - Limit at 100 % VR 200 150 PR - Limit at 80 % VR 100 50 0 25 50 75 100 125 150
70 f = 1 MHz
CD - Diode Capacitance (pF)
60 50 40 30 20 10 0 0.1
1
10
100
16405
Tj - Junction Temperature (°C)
16406
VR - Reverse Voltage (V)
Fig. 5 - Diode Capacitance vs. Reverse Voltage
Fig. 6 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): SOD-64
Sintered Glass Case SOD-64 4.3 (0.168) max.
Cathode Identification
1.35 (0.053) max.
26(1.014) min.
4 (0.156) max.
26 (1.014) min.
Document-No.: 6.563-5006.4-4 Rev. 3 - Date: 09.February.2005
94 9587
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For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 86004 Rev. 1.7, 09-Aug-10
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Vishay
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Document Number: 91000 Revision: 11-Mar-11
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