BY251GP

BY251GP thru BY255GP Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES • Superectifier application structure for high reliability SUPERECTIFIER® • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current, IR less than 0.1 μA • High forward surge capability • Meets environmental standard MIL-S-19500 • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC DO-201AD TYPICAL APPLICATIONS For use in general purpose rectification of power supplies, inverters, converters and freewheeling diodes for both consumer and automotive applications. 3.0 A 200 V to 1300 V 100 A 5.0 μA 1.1 V 175 °C PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM IR VF TJ max. MECHANICAL DATA Case: DO-201AD, molded epoxy over glass body Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum non repetitive peak reverse voltage Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 10 mm lead length at TA = 55 °C Peak forward surge current 10 ms single half sine-wave superimposed on rated load Maximum full load reverse current, full cycle average 10 mm lead length at TA = 55 °C Operating junction and storage temperature range SYMBOL BY251GP BY252GP BY253GP BY254GP BY255GP VRSM VRRM VRMS VDC IF(AV) IFSM IR(AV) TJ, TSTG 220 200 140 200 440 400 280 400 660 600 420 600 3.0 100 100 - 65 to + 175 880 800 560 800 1430 1300 910 1300 UNIT V V V V A A μA °C Document Number: 88541 Revision: 15-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BY251GP thru BY255GP Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage Maximum reverse current at rated DC blocking voltage Maximum reverse recovery time Typical junction capacitance TEST CONDITIONS 3.0 A TA = 25 °C IF = 0.5 A, IR = 1.0 V, Irr = 0.25 A 4.0 V, 1 MHz SYMBOL VF IR trr CJ BY251GP BY252GP BY253GP 1.1 5.0 3.0 40 BY254GP BY255GP UNIT V μA μs pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL RJA (1) RJL (1) BY251GP BY252GP BY253GP 20 BY254GP BY255GP UNIT °C/W 10 Note (1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted ORDERING INFORMATION (Example) PREFERRED P/N BY253GP-E3/54 BY253GP-E3/73 BY253GPHE3/54 BY253GPHE3/73 (1) (1) (1) UNIT WEIGHT (g) 1.28 1.28 1.28 1.28 PREFERRED PACKAGE CODE 54 73 54 73 BASE QUANTITY 1400 1000 1400 1000 DELIVERY MODE 13" diameter paper tape and reel Ammo pack packaging 13" diameter paper tape and reel Ammo pack packaging Note AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 4.0 1000 Average Forward Rectified Current (A) 3.0 Peak Forward Surge Current (A) 60 Hz Resistive or Inductive Load TJ = TJ Max. 10 ms Single Half Sine-Wave 2.0 100 1.0 10 mm Lead Length 0 0 25 50 75 100 125 150 175 10 1 10 100 Ambient Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current For technical questions within your region, please contact one of the following: Document Number: 88541 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 15-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com 2 BY251GP thru BY255GP Vishay General Semiconductor 10 100 TJ = 125 °C TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Instantaneous Reverse Leakage Current (μA) 1 TJ = 75 °C 0.1 TJ = 25 °C 0.01 0 20 40 60 80 100 Junction Capacitance (pF) 10 1 10 100 Percent of Rated Peak Reverse Voltage (%) Reverse Voltage (V) Fig. 3 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 5 - Typical Junction Capacitance 100 Instantaneous Forward Current (A) 10 TJ = 25 °C Pulse Width = 300 μs 1 % Duty Cycle 1 0.1 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 Instantaneous Forward Voltage (V) Fig. 4 - Typical Instantaneous Forward Characteristics PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-201AD 1.0 (25.4) MIN. 0.210 (5.3) 0.190 (4.8) DIA. 0.375 (9.5) 0.285 (7.2) 1.0 (25.4) MIN. 0.052 (1.32) 0.048 (1.22) DIA. Document Number: 88541 Revision: 15-Mar-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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