BY448 , BY458
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction • Hermetically sealed package • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition
949539
APPLICATIONS
• High voltage rectification • Efficiency diode in horizontal deflection circuits
MECHANICAL DATA
Case: SOD-57 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg
PARTS TABLE
PART BY448 BY458 TYPE DIFFERENTIATION VR = 1500 V; IFAV = 2 A VR = 1200 V; IFAV = 2 A PACKAGE SOD-57 SOD-57
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER Reverse voltage Peak forward surge current Average forward current Junction temperature Storage temperature range Non repetitive reverse avalanche energy l(BR)R = 0.4 A TEST CONDITION See electrical characteristics tp = 10 ms, half sine wave PART BY448 BY458 SYMBOL VR = VRRM VR = VRRM IFSM IFAV Tj Tstg ER VALUE 1500 1200 30 2 140 - 55 to + 175 10 UNIT V V A A °C °C mJ
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER Junction ambient TEST CONDITION l = 10 mm, TL = constant On PC board with spacing 25 mm SYMBOL RthJA RthJA VALUE 45 100 UNIT K/W K/W
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER Forward voltage Reverse current Total reverse recovery time Reverse recovery time TEST CONDITION IF = 3 A VR = VRRM VR = VRRM, Tj = 140 °C IF = 1 A, - dIF/dt = 0.05 A/μs IF = 0.5 A, IR = 1 A, iR = 0.25 A SYMBOL VF IR IR trr trr MIN. TYP. MAX 1.6 3 140 20 2 UNIT V μA μA μs μs
Document Number: 86006 Rev. 1.7, 09-Aug-10
For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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BY448 , BY458
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
RthJA - Ther. Resist. Junction/Ambient (K/W)
120 l 100 l
VR = VRRM 1000
IR - Reverse Current (μA)
15 20 25 30
80 TL = constant 60 40 20 0 0
949101
100
10
1
5
10
16419
25
50
75
100
125
150
l - Lead Length (mm)
Tj - Junction Temperature (°C)
Fig. 1 - Typ. Thermal Resistance vs. Lead Length
Fig. 4 - Reverse Current vs. Junction Temperature
PR - Reverse Power Dissipation (mW)
100 Tj = 150 °C
400 VR = VRRM 350 300 250 200 150 100 50 0 25 50 75 100 125 150 PR - Limit at 80 % VR PR - Limit at 100 % VR
IF - Forward Current (A)
10
1 Tj = 25 °C 0.1
0.01
0.001 0
16417
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
16420
VF - Forward Voltage (V)
Tj - Junction Temperature (°C)
Fig. 2 - Forward Current vs. Forward Voltage
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature
2.5
35
VR = VRRM
IFAV - Average Forward Current (A)
f = 1 MHz
2.0
CD - Diode Capacitance (pF)
150
16421
half sine wave RthJA = 45 K/W l = 10 mm
30 25 20 15 10 5 0
1.5
1.0
0.5
RthJA = 100 K/W PCB: d = 25 mm
0 0
16418
25
50
75
100
125
0.1
1
10
100
Tamb - Ambient Temperature (°C)
VR - Reverse Voltage (V)
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
Fig. 6 - Diode Capacitance vs. Reverse Voltage
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For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 86006 Rev. 1.7, 09-Aug-10
BY448 , BY458
Standard Avalanche Sinterglass Diode
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
0.82 (0.032) max. 26 (1.024) min. 4 (0.157) max. 26 (1.024) min.
Vishay Semiconductors
Document Number: 86006 Rev. 1.7, 09-Aug-10
3.6 (0.142) max. 20543
For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com 149
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Document Number: 91000 Revision: 11-Mar-11
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