BY527_10

BY527 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Controlled avalanche characteristics • Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current capability • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 949539 • Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: SOD-57 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg APPLICATIONS • General purpose PARTS TABLE PART BY527 TYPE DIFFERENTIATION VR = 800 V; IFAV = 2 A PACKAGE SOD-57 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Reverse voltage, non repetitive Reverse voltage Peak forward surge current Repetitive peak forward current Average forward current Pulse avalanche peak power Pulse energy in avalanche mode, non repetitive (inductive load switch off) i2t rating Junction and storage temperature range ϕ = 180° Tj = 175 °C, tp = 20 μs, half sinus wave l(BR)R = 1 A, Tj = 175 °C TEST CONDITION lR = 100 μA See electrical characteristics tp = 10 ms, half sine wave SYMBOL VRSM VR IFSM lFRM IFAV PR ER i2 t Tj = Tstg VALUE 1250 800 50 12 2 1000 20 8 -55 to + 175 UNIT V V A A A W mJ A2 s °C MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified) PARAMETER Junction ambient TEST CONDITION Lead length l = 10 mm, TL = constant On PC board with spacing 25 mm SYMBOL RthJA RthJA VALUE 45 100 UNIT K/W K/W www.vishay.com 150 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 86007 Rev. 1.7, 25-Aug-10 BY527 Standard Avalanche Sinterglass Diode Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Reverse current Breakdown voltage Diode capacitance Reverse recovery time Reverse recovery charge TEST CONDITION IF = 1 A IF = 10 A VR = 800 V VR = 800 V, Tj = 100 °C IR = 100 μA, tp/T = 0.01, tp = 0.3 ms VR = 4 V, f = 1 MHz IF = 0.5 A, IR = 1 A, iR = 0.25 A IF = 1 A, dI/dt = 5 A/μs, VR = 50 V IF = 1 A, dI/dt = 5 A/μs SYMBOL VF VF IR IR V(BR) CD trr trr Qrr MIN. 1250 TYP. 0.9 0.1 5 16 MAX 1 1.65 1 10 4 4 3 UNIT V V μA μA V pF μs μs μC TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) RthJA - Ther. Resist. Junction/Ambient (K/W) 120 IFAV - Average Forward Current (A) l 100 80 l 2.5 VR = VRRM 2.0 half sine wave RthJA = 45 K/W l = 10 mm 1.5 TL = constant 60 40 20 0 0 949101 1.0 RthJA = 100 K/W PCB: d = 25 mm 0 0.5 5 10 15 20 25 30 16423 0 20 40 60 80 100 120 140 160 180 l - Lead Length (mm) Tamb - Ambient Temperature (°C) Fig. 1 - Typ. Thermal Resistance vs. Lead Length Fig. 3 - Max. Average Forward Current vs. Ambient Temperature 100 1000 VR = VRRM IF - Forward Current (A) 10 Tj = 175 °C IR - Reverse Current (μA) 2 2.5 3 100 1 0.1 Tj = 25 °C 0.01 10 0.001 0 16422 1 0.5 1 1.5 25 16424 50 75 100 125 150 175 VF - Forward Voltage (V) Tj - Junction Temperature (°C) Fig. 2 - Forward Current vs. Forward Voltage Fig. 4 - Reverse Current vs. Junction Temperature Document Number: 86007 Rev. 1.7, 25-Aug-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 151 BY527 Vishay Semiconductors Standard Avalanche Sinterglass Diode PR - Reverse Power Dissipation (mW) 300 VR = VRRM 250 200 PR - Limit at 100 % VR 150 100 PR - Limit at 80 % VR 50 0 25 50 75 100 125 150 175 40 CD - Diode Capacitance (pF) 35 30 25 20 15 10 5 0 0.1 1 10 f = 1 MHz 100 16425 Tj - Junction Temperature (°C) 16426 VR - Reverse Voltage (V) Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 6 - Diode Capacitance vs. Reverse Voltage 1000 VRRM = 1000 V, RthJA = 100 K/W Zthp - Thermal Resistance for Pulse Cond. (K/W) 100 tp/T = 0.5 tp/T = 0.2 10 tp/T = 0.1 tp/T = 0.05 tp/T = 0.02 1 10 tp/T = 0.01 -5 Tamb = 25 °C Tamb = 45 °C Tamb = 60 °C Tamb = 70 °C Tamb = 100 °C -4 10 10 -3 10 -2 10 -1 10 0 10 1 1 10 100 94 9178 tp - Pulse Length (s) IFRM - Repetitive Peak Forward Current (A) Fig. 7 - Thermal Response PACKAGE DIMENSIONS in millimeters (inches): SOD-57 0.82 (0.032) max. 26 (1.024) min. 4 (0.157) max. 26 (1.024) min. www.vishay.com 152 3.6 (0.142) max. 20543 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 86007 Rev. 1.7, 25-Aug-10 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1