BYG10J

BYG10D thru BYG10Y Vishay General Semiconductor Standard Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Controlled avalanche characteristics • Glass passivated junction • Low reverse current • High surge current capability DO-214AC (SMA) • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Solder dip 260 °C, 40 s • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in generell purpose rectification of power supplies, inverters, converters and freewheeling diodes for consumer, automotive and telecommunication. MECHANICAL DATA Case: DO-214AC (SMA) Epoxy meets UL 94 V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC-Q101 qualified), meets JESD 201 class 2 whisker test Note: • BYG10Y for commercial grade only PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM IR VF ER TJ max. 1.5 A 200 V to 1600 V 30 A 1.0 µA 1.15 V 20 mJ 150 °C Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Average forward current Peak forward surge current 10 ms single half sine-wave superimposed on rated load Pulse energy in avalanche mode, non repetitive (inductive load switch off) I(BR)R = 1 A, TJ = 25 °C (for BYG10D-BYG10M) Operating junction and storage temperature range VRRM IF(AV) IFSM SYMBOL BYG10D BYG10D 200 BYG10G BYG10G 400 BYG10J BYG10J 600 1.5 30 BYG10K BYG10K 800 BYG10M BYG10M 1000 BYG10Y BYG10Y 1600 V A A UNIT ER TJ, TSTG 20 - 55 to + 150 mJ °C Document Number: 88957 Revision: 03-Jun-09 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 BYG10D thru BYG10Y Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage (1) Maximum DC reverse current Maximum reverse recovery time Note: (1) Pulse test: 300 µs pulse width, 1 % duty cycle TEST CONDITIONS IF = 1 A IF = 1.5 A VR = VRRM TJ = 25 °C TJ = 25 °C TJ = 100 °C SYMBOL VF BYG10D BYG10G BYG10J BYG10K BYG10M BYG10Y UNIT V 1.1 1.15 1 10 4 IR trr µA µs IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance, junction to lead Typical thermal resistance, junction to ambient SYMBOL RθJL RθJA BYG10D BYG10G BYG10J 25 150 125 (2) 100 (3) (1) BYG10K BYG10M BYG10Y UNIT °C/W °C/W Notes: (1) Mounted on epoxy-glass hard tissue (2) Mounted on epoxy-glass hard tissue, 50 mm2 35 µm Cu (3) Mounted on Al-oxide-ceramic (Al2O3), 50 mm2 35 µm Cu ORDERING INFORMATION (Example) PREFERRED P/N BYG10D-E3/TR BYG10D-E3/TR3 BYG10DHE3/TR (1) BYG10DHE3/TR3 (1) Note: (1) AEC-Q101 qualified UNIT WEIGHT (g) 0.064 0.064 0.064 0.064 PACKAGE CODE TR TR3 TR TR3 BASE QUANTITY 1800 7500 1800 7500 DELIVERY MODE 7" diameter plastic tape and reel 13" diameter plastic tape and reel 7" diameter plastic tape and reel 13" diameter plastic tape and reel www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88957 Revision: 03-Jun-09 BYG10D thru BYG10Y Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 400 Reverse Power Dissipation (mW) 350 300 250 200 150 100 50 0 VR = VRRM PR - Limit at 100 % VR 10 Forward Current (A) TJ = 150 °C 1 TJ = 25 °C 0.1 PR - Limit at 80 % VR 0.01 0.001 0 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 Forward Voltage (V) Junction Temperature (°C) Figure 1. Forward Current vs. Forward Voltage Figure 4. Max. Reverse Power Dissipation vs. Junction Temperature 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 RθJA ≤ 125 K/W RθJA ≤ 150 K/W VR = VRRM Half Sine-Wave RθJA ≤ 25 K/W 30 f = 1 MHz 25 Average Forward Current (A) Diode Capacitance (pF) 20 15 10 5 0 0.1 1 10 100 Ambient Temperature (°C) Reverse Voltage (V) Figure 2. Max. Average Forward Current vs. Ambient Temperature Figure 5. Diode Capacitance vs. Reverse Voltage 1000 VR = VRRM 5000 TA = 125 °C Reverse Recovery Time (ns) 4000 TA = 100 °C 3000 TA = 75 °C 2000 TA = 50 °C TA = 25 °C 1000 IR = 0.5 A, iR = 0.125 A Reverse Current (µA) 100 10 1 25 50 75 100 125 150 0 0 0.2 0.4 0.6 0.8 1.0 Junction Temperature (°C) Forward Current (A) Figure 3. Reverse Current vs. Junction Temperature Figure 6. Reverse Recovery Time vs. Forward Current Document Number: 88957 Revision: 03-Jun-09 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 BYG10D thru BYG10Y Vishay General Semiconductor 2000 Reverse Recovery Charge (nC) TA = 125 °C 1600 TA = 100 °C 1200 TA = 75 °C TA = 50 °C 800 TA = 25 °C 400 IR = 0.5 A, iR = 0.125 A 0 0 0.2 0.4 0.6 0.8 1.0 Forward Current (A) Figure 7. Reverse Recovery Charge vs. Forward Current PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode Band Mounting Pad Layout 0.066 (1.68) MIN. 0.074 (1.88) MAX. 0.065 (1.65) 0.049 (1.25) 0.110 (2.79) 0.100 (2.54) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) www.vishay.com 4 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88957 Revision: 03-Jun-09 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1