BYG21K

BYG21K & BYG21M Vishay General Semiconductor Fast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Soft recovery characteristic • Fast reverse recovery time DO-214AC (SMA) • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM IR VF trr ER TJ max. 1.5 A 800 V, 1000 V 30 A 1.0 µA 1.6 V 120 ns 20 mJ 150 °C TYPICAL APPLICATIONS For use in fast switching rectification of power supply, inverters, converters and freewheeling diodes for consumer, automotive and telecommunication. MECHANICAL DATA Case: DO-214AC (SMA) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Average forward current Peak forward surge current 10 ms single half sine-wave superimposed on rated load Pulse energy in avalanche mode, non repetitive (inductive load switch off) I(BR)R = 1 A, TJ = 25 °C Operating junction and storage temperature range VRRM IF(AV) IFSM ER TJ, TSTG SYMBOL BYG21K BYG21K 800 1.5 30 20 - 55 to + 150 BYG21M BYG21M 1000 V A A mJ °C UNIT Document Number: 88961 Revision: 11-Apr-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 BYG21K & BYG21M Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage (1) Maximum reverse current Maximum reverse recovery time TEST CONDITIONS IF = 1 A IF = 1.5 A VR = VRRM TJ = 25 °C TJ = 25 °C TJ = 100 °C SYMBOL VF IR trr BYG21K 1.5 1.6 1 10 120 BYG21M UNIT V µA ns IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A Note: (1) Pulse test: 300 µs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance, junction to lead TL = const. Typical thermal resistance, junction to ambient Notes: (1) Mounted on epoxy-glass hard tissue (2) Mounted on epoxy-glass hard tissue, 50 mm2 35 µm Cu (3) Mounted on Al-oxide-ceramic (Al2O3), 50 mm2 35 µm Cu SYMBOL RθJL RθJA BYG21K 25 150 (1) 125 (2) 100 (3) BYG21M UNIT °C/W °C/W ORDERING INFORMATION (Example) PREFERRED P/N BYG21K-E3/TR BYG21K-E3/TR3 BYG21KHE3/TR (1) BYG21KHE3/TR3 (1) UNIT WEIGHT (g) 0.064 0.064 0.064 0.064 PACKAGE CODE TR TR3 TR TR3 BASE Q’TY 1800 7500 1800 7500 DELIVERY MODE 7" diameter plastic tape and reel 13" diameter plastic tape and reel 7" diameter plastic tape and reel 13" diameter plastic tape and reel Note: (1) Automotive grade AEC Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 10 TJ = 150 °C 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.001 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 0 25 50 75 100 125 150 RθJA = 150 K/W RθJA = 125 K/W RθJA = 25 K/W VR = VRRM Half Sine-Wave Forward Current (A) 1 TJ = 25 °C 0.1 0.01 Forward Voltage (V) Average Forward Current (A) Ambient Temperature (°C) Figure 1. Forward Current vs. Forward Voltage Figure 2. Max. Average Forward Current vs. Ambient Temperature www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88961 Revision: 11-Apr-08 BYG21K & BYG21M Vishay General Semiconductor 100 200 Reverse Recovery Charge (nC) VR = VRRM TA = 125 °C 150 TA = 100 °C TA = 75 °C 100 TA = 50 °C TA = 25 °C 50 Reverse Current (µA) 10 IR = 0.5 A, iR = 0.125 A 1 25 50 75 100 125 150 0 0 0.2 0.4 0.6 0.8 1.0 Junction Temperature (°C) Forward Current (A) Figure 3. Reverse Current vs. Junction Temperature Figure 6. Max. Reverse Recovery Charge vs. Forward Current 120 Thermal Resistance for Pulse Cond. (K/W) 1000 Reverse Power Dissipation (mW) VR = VRRM 100 PR - Limit at 100 % VR 125 K/W DC 100 tP/T = 0.5 tP/T = 0.2 tP/T = 0.1 10 tP/T = 0.05 tP/T = 0.02 Single Pulse tP/T = 0.01 1 10-5 10-4 10-3 10-2 10-1 100 101 102 80 60 PR - Limit at 80 % VR 40 20 0 25 50 75 100 125 150 Junction Temperature (°C) Pulse Length (s) Figure 4. Max. Reverse Power Dissipation vs. Junction Temperature Figure 7. Thermal Response 25 f = 1 MHz Diode Capacitance (pF) 20 15 10 5 0 0.1 1 10 100 Reverse Voltage (V) Figure 5. Diode Capacitance vs. Reverse Voltage Document Number: 88961 Revision: 11-Apr-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 BYG21K & BYG21M Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode Band Mounting Pad Layout 0.066 (1.68) MIN. 0.074 (1.88) MAX. 0.065 (1.65) 0.049 (1.25) 0.110 (2.79) 0.100 (2.54) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) www.vishay.com 4 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88961 Revision: 11-Apr-08 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1