BYG22B

BYG22A thru BYG22D Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Low forward voltage • Soft recovery characteristic DO-214AC (SMA) • Ultra fast reverse recovery time • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM IR VF trr ER TJ max. 2A 50 V to 200 V 35 A 1.0 µA 1.1 V 25 ns 20 mJ 150 °C TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive and telecommunication. MECHANICAL DATA Case: DO-214AC (SMA) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for highreliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Average forward current Peak forward surge current 10 ms single half sine-wave superimposed on rated load Pulse energy in avalanche mode, non repetitive (inductive load switch off) I(BR)R = 1 A, TJ = 25 °C Operating junction and storage temperature range VRRM IF(AV) IFSM SYMBOL BYG22A BYG22A 50 BYG22B BYG22B 100 2.0 35 BYG22D BYG22D 200 V A A UNIT ER TJ, TSTG 20 - 55 to + 150 mJ °C Document Number: 88959 Revision: 27-Aug-07 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 BYG22A thru BYG22D Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage (1) Maximum reverse current Maximum reverse recovery time Note: (1) Pulse test: 300 µs pulse width, 1 % duty cycle TEST CONDITIONS IF = 1.0 A IF = 2.0 A VR = VRRM TJ = 25 °C TJ = 25 °C TJ = 100 °C SYMBOL VF IR trr BYG22A BYG22B 1.0 1.1 1 10 25 BYG22D UNIT V µA ns IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum thermal resistance - junction lead TL = const. Maximum thermal resistance - junction ambient Notes: (1) Mounted on epoxy-glass hard tissue (2) Mounted on epoxy-glass hard tissue, 50 mm2 35 µm Cu (3) Mounted on Al-oxide-ceramic (Al2O3), 50 mm2 35 µm Cu SYMBOL RθJL RθJA BYG22A BYG22B 25 150 (1) 125 (2) 100 (3) BYG22D UNIT °C/W °C/W ORDERING INFORMATION (Example) PREFERRED P/N BYG22A-E3/TR BYG22A-E3/TR3 BYG22AHE3/TR (1) BYG22AHE3/TR3 Note: (1) Automotive grade AEC Q101 qualified (1) UNIT WEIGHT (g) 0.064 0.064 0.064 0.064 PACKAGE CODE TR TR3 TR TR3 BASE QUANTITY 1800 7500 1800 7500 DELIVERY MODE 7" diameter plastic tape and reel 13" diameter plastic tape and reel 7" diameter plastic tape and reel 13" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 10 2.5 VR = VRRM Half Sine-Wave 2.0 RθJA ≤ 25 K/W 1.5 Forward Current (A) 1 TJ = 150 °C TJ = 25 °C 0.1 Average Forward Current (A) 1.0 RθJA ≤ 125 K/W 0.01 0.5 RθJA ≤ 150 K/W 0.001 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 20 40 60 80 100 120 140 160 Forward Voltage (V) Ambient Temperature (°C) Figure 1. Forward Current vs. Forward Voltage Figure 2. Max. Average Forward Current vs. Ambient Temperature www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88959 Revision: 27-Aug-07 BYG22A thru BYG22D Vishay General Semiconductor 100 VR = VRRM 140 TA = 125 °C 120 100 80 60 40 20 IR = 0.5 A, iR = 0.125 A 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 TA = 100 °C TA = 75 °C TA = 50 °C 10 Reverse Recovery Time (ns) Reverse Current (µA) TA = 25 °C 1 Junction Temperature (°C) Forward Current (A) Figure 3. Reverse Current vs. Junction Temperature Figure 6. Max. Reverse Recovery Time vs. Forward Current 50 60 Reverse Power Dissipation (mW) Reverse Recovery Charge (nC) VR = VRRM 40 TA = 125 °C 50 TA = 100 °C 40 TA = 75 °C 30 TA = 50 °C 20 TA = 25 °C 10 IR = 0.5 A, iR = 0.125 A 30 PR - Limit at 100 % VR PR - Limit at 80 % VR 20 10 0 25 50 75 100 125 150 0 0 0.2 0.4 0.6 0.8 1.0 Junction Temperature (°C) Forward Current (A) Figure 4. Max. Reverse Power Dissipation vs. Junction Temperature Figure 7. Max. Reverse Recovery Charge vs. Forward Current 70 f = 1 MHz 60 Thermal Resistance for Pulse Cond. (K/W) 1000 Diode Capacitance (pF) 50 40 30 20 10 0 0.1 1 10 100 125 K/W DC 100 tp/T = 0.5 tp/T = 0.2 tp/T = 0.1 10 tp/T = 0.05 tp/T = 0.02 Single Pulse tp/T = 0.01 1 10-5 10-4 10-3 10-2 10-1 100 101 102 Reverse Voltage (V) Pulse Length (s) Figure 5. Diode Capacitance vs. Reverse Voltage Figure 8. Thermal Response Document Number: 88959 Revision: 27-Aug-07 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 BYG22A thru BYG22D Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode Band Mounting Pad Layout 0.066 (1.68) MIN. 0.074 (1.88) MAX. 0.065 (1.65) 0.049 (1.25) 0.110 (2.79) 0.100 (2.54) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) www.vishay.com 4 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88959 Revision: 27-Aug-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1