BYG24G

BYG24D thru BYG24J Vishay General Semiconductor Fast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Soft recovery characteristics • Fast reverse recovery time DO-214AC (SMA) • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive and telecommunication. MECHANICAL DATA Case: DO-214AC (SMA) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM IR VF trr ER TJ max. 1.5 A 200 V to 600 V 30 A 1.0 µA 1.25 V 140 ns 20 mJ 150 °C MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Average forward current TA = 65 °C VRRM IF(AV) IFSM SYMBOL BYG24D BYG24D 200 BYG24G BYG24G 400 1.5 30 BYG24J BYG24J 600 V A A UNIT Peak forward surge current 10 ms single half sine-wave superimposed on rated load Pulse energy in avalanche mode, non repetitive (inductive load switch off) I(BR)R = 1 A, TJ = 25 °C Operating junction and storage temperature range ER TJ, TSTG 20 - 55 to + 150 mJ °C Document Number: 88960 Revision: 11-Apr-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 BYG24D thru BYG24J Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Minimum breakdown voltage Maximum instantaneous forward voltage (1) Maximum reverse current Maximum reverse recovery time TEST CONDITIONS IR = 100 µA IF = 1 A IF = 1.5 A VR = VRRM SYMBOL VBR BYG24D 200 BYG24G 400 1.15 1.25 1 10 140 BYG24J 600 UNIT V TJ = 25 °C TJ = 25 °C TJ = 100 °C VF V IR trr µA ns IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A Note: (1) Pulse test: 300 µs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Junction case Maximum thermal resistance, junction to ambient SYMBOL RthJC RθJA BYG24D BYG24G 25 150 (1) 125 (2) BYG24J UNIT °C/W °C/W Notes: (1) Mounted on epoxy-glass hard tissue 35 µm x 17 mm2 cooper area per electrode (2) Mounted on epoxy-glass hard tissue 35 µm x 50 mm2 cooper area per electrode ORDERING INFORMATION (Example) PREFERRED P/N BYG24D-E3/TR BYG24D-E3/TR3 BYG24DHE3/TR (1) BYG24DHE3/TR3 (1) UNIT WEIGHT (g) 0.064 0.064 0.064 0.064 PACKAGE CODE TR TR3 TR TR3 BASE QUANTITY 1800 7500 1800 7500 DELIVERY MODE 7" diameter plastic tape and reel 13" diameter plastic tape and reel 7" diameter plastic tape and reel 13" diameter plastic tape and reel Note: (1) Automotive grade AEC Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 60 100 RθJA = 125 K/W 155 K/W 175 K/W 30 VR = VRRM VR = VRRM PR - Limit at 100 % VR Reverse Power Dissipation (mW) 50 40 Reverse Current (µA) 10 20 10 PR - Limit at 80 % VR 1 25 50 75 100 125 150 25 50 75 100 125 150 0 Junction Temperature (°C) Junction Temperature (°C) Figure 1. Max. Reverse Power Dissipation vs. Junction Temperature Figure 2. Reverse Current vs. Junction Temperature www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88960 Revision: 11-Apr-08 BYG24D thru BYG24J Vishay General Semiconductor 100 30 f = 1 MHz 25 Forward Current (A) 10 TJ = 150 °C Diode Capacitance (pF) 20 1 TJ = 25 °C 15 10 0.1 5 0.01 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.1 1 10 100 Forward Voltage (V) Reverse Voltage (V) Figure 3. Forward Current vs. Forward Voltage Figure 5. Diode Capacitance vs. Reverse Voltage 1.8 1.6 VR = VRRM Half Sine-Wave RθJA = 25 K/W Average Forward Current (A) 1.4 1.2 1.0 RθJA = 125 K/W 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 140 160 RθJA = 150 K/W Ambient Temperature (°C) Figure 4. Average Forward Current vs. Ambient Temperature PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode Band Mounting Pad Layout 0.066 (1.68) MIN. 0.074 (1.88) MAX. 0.065 (1.65) 0.049 (1.25) 0.110 (2.79) 0.100 (2.54) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Document Number: 88960 Revision: 11-Apr-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1