BYM36E

VISHAY BYM36 Vishay Semiconductors Fast Avalanche Sinterglass Diode Features • • • • Glass passivated Hermetically sealed package Very low switching losses Low reverse current 949588 • High reverse voltage Mechanical Data Case: SOD-64 Sintered glass case Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: approx. 858 mg Applications Switched mode power supplies High-frequency inverter circuits Parts Table Part BYM36A BYM36B BYM36C BYM36D BYM36E Type differentiation VR = 200 V; IFAV = 3 A VR = 400 V; IFAV = 3 A VR = 600 V; IFAV = 3 A VR = 800 V; IFAV = 2.9 A VR = 1000 V; IFAV = 2.9 A SOD-64 SOD-64 SOD-64 SOD-64 SOD-64 Package Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage = Repetitive peak reverse voltage Test condition see electrical characteristics Part BYM36A BYM36B BYM36C BYM36D BYM36E Peak forward surge current Average forward current Non repetitive reverse avalanche energy Junction and storage temperature range I(BR)R = 1 A, inductive load tp = 10 ms, half sinewave BYM36A-BYM36C BYM36D-BYM36E Symbol VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR = VRRM IFSM IFAV IFAV ER Tj = Tstg Value 200 400 600 800 1000 65 3 2.9 20 - 55 to + 175 Unit V V V V V A A A mJ °C Document Number 86012 Rev. 1.6, 12-Aug-04 www.vishay.com 1 BYM36 Vishay Semiconductors Maximum Thermal Resistance Tamb = 25 °C, unless otherwise specified Parameter Junction ambient Test condition l = 10 mm, TL = constant on PC Board with spacing \re\n25 mm Symbol RthJA RthJA Value 25 70 VISHAY Unit K/W K/W Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage IF = 3 A Test condition Part BYM36ABYM36C BYM36DBYM36E IF = 3 A, Tj = 175 °C BYM36ABYM36C BYM36DBYM36E Reverse current Reverse breakdown voltage VR = VRRM VR = VRRM, Tj = 150 °C IR = 100 µA BYM36A BYM36B BYM36C BYM36D BYM36E Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A BYM36ABYM36C BYM36DBYM36E Symbol VF VF VF VF IR IR V(BR)R V(BR)R V(BR)R V(BR)R V(BR)R trr trr 300 500 700 900 1100 100 150 Min Typ. Max 1.6 1.78 1.22 1.28 5 100 Unit V V V V µA µA V V V V V ns ns Typical Characteristics (Tamb = 25 °C unless otherwise specified) P - Maximum Reverse Power Dissipation (mW R I FAV - Average Forward Current ( A ) 600 500 R thJA = 25 K/W 400 300 200 100 0 R thJA = 70 K/W 1000V 800V 600V 400V 200V 0 40 80 120 160 200 4 BYM36A, BYM36B, BYM36C 3 R thJA = 25 K/W 2 R thJA =70 K/W 1 V R = VRRM Half Sinewave 0 40 80 120 160 200 Tamb - Ambient Temperature ( °C ) 0 95 9706 95 9705 Tj – Junction Temperature ( ° C ) Figure 1. Max. Reverse Power Dissipation vs. Junction Temperature Figure 2. Max. Average Forward Current vs. Ambient Temperature www.vishay.com 2 Document Number 86012 Rev. 1.6, 12-Aug-04 VISHAY BYM36 Vishay Semiconductors 100 I F – Forward Current ( A ) I FAV – Average Forward Current ( A ) 4 BYM36D, BYM36E 3 R thJA = 25 K/W 2 R thJA = 70 K/W 1 V R =V RRM Half Sinewave 0 40 80 120 160 200 Tamb – Ambient Temperature ( °C ) Tj = 175°C 10 1 Tj = 25°C 0.1 0.01 0.001 0 1 BYM36D, BYM36E 2 3 4 0 95 9707 95 9709 V F – Forward Voltage ( V ) Figure 3. Max. Average Forward Current vs. Ambient Temperature Figure 6. Max. Forward Current vs. Forward Voltage 1000 90 CD – Diode Capacitance ( pF ) I R - Reverse Current ( µA ) 100 80 70 60 50 40 30 20 10 0 0.1 1 10 f =1 MHz 10 V R = VRRM 1 0.1 95 9704 0 40 80 120 160 200 16302 100 Tj - Junction T emperature ( ° C ) V R – Reverse Voltage ( V ) Figure 4. Max. Reverse Current vs. Junction Temperature Figure 7. Diode Capacitance vs. Reverse Voltage 100 I F – Forward Current ( A ) Tj = 175°C 10 1 Tj = 25 ° C 0.1 0.01 0.001 0 BYM36A, BYM36B, BYM36C 1 2 3 4 95 9708 V F – Forward Voltage ( V ) Figure 5. Max. Forward Current vs. Forward Voltage Document Number 86012 Rev. 1.6, 12-Aug-04 www.vishay.com 3 BYM36 Vishay Semiconductors Package Dimensions in mm (Inches) Sintered Glass Case SOD-64 Cathode Identification 4.3 (0.168) max. ISO Method E VISHAY 1.35 (0.053) max. 26(1.014) min. 4.0 (0.156) max. 26 (1.014) min. 94 9587 www.vishay.com 4 Document Number 86012 Rev. 1.6, 12-Aug-04 VISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. BYM36 Vishay Semiconductors 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 86012 Rev. 1.6, 12-Aug-04 www.vishay.com 5