BYT08P800A

BYT08P/600A/800A Vishay Telefunken Fast Recovery Silicon Power Rectifier Features D D D D D D D D Multiple diffusion Low switch on power losses Good soft recovery behaviour Fast forward recovery time Fast reverse recovery time Low reverse current Very low turn on transient peak voltage Very good reverse current stability at high temperature 14282 D Low thermal resistance Applications Fast rectifiers in S.M.P.S Freewheeling diodes and snubber diodes in motor control circuits Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage g =Repetitive peak reverse voltage Peak forward surge current Repetitive peak forward current Average forward current Junction and storage temperature range Test Conditions Type BYT08P/600A BYT08P/800A Symbol VR=VRRM VR=VRRM IFSM IFRM IFAV Tj=Tstg Value 600 800 50 16 8 –40...+150 Unit V V A A A °C tp=10ms, half sinewave Maximum Thermal Resistance Tj = 25_C Parameter Junction case Junction ambient Test Conditions Symbol RthJC RthJA Value 2.0 85 Unit K/W K/W Document Number 86017 Rev. 3, 24-Jun-98 www.vishay.de • FaxBack +1-408-970-5600 1 (5) BYT08P/600A/800A Vishay Telefunken Electrical Characteristics Tj = 25_C Parameter Forward voltage g Reverse current Forward recovery time Turn on transient peak voltage Reverse recovery characteristics y Reverse recovery time Test Conditions IF=8A IF=8A, Tj=100°C VR=VRRM VR=VRRM, Tj=100°C IF=8A; diF/dt 50A/ms F Batt F F F Reverse recovery current Reverse recovery time VBatt=200V, Tj=100°C, iR=0.25xIRM IF=0.5A, IR=1A, iR=0.25A IF=1A, diF/dt –50A/ms, VBatt=200V IF=1A, diF/dt –50A/ms, VBatt=200V, iR=0.25xIRM x I =8A, di /dtx–32A/ms, , , V =200V, T =100°C I =8A, di /dtx–32A/ms, j Type Symbol Min VF VF IR IR tfr VFP IRM tIRM trr Typ Max 1.9 1.8 35 2 4,5 4 160 350 100 Unit V V mA mA ns V A ns ns x x trr IRM trr 50 1.7 75 ns A ns Characteristics (Tj = 25_C unless otherwise specified) 1000 I FAV– Average Forward Current ( A ) I R – Reverse Current ( mA ) 10 100 8 RthJA=8K/W 6 10K/W RthJC=2K/W 10 VR=VRRM 1 4 20K/W 2 0 85K/W 0 40 80 120 160 200 Tamb – Ambient Temperature ( °C ) 0.1 0 94 9357 40 80 120 160 200 94 9355 Tj – Junction Temperature ( °C ) Figure 1. Typ. Reverse Current vs. Junction Temperature Figure 2. Max. Average Forward Current vs. Ambient Temperature www.vishay.de • FaxBack +1-408-970-5600 2 (5) Document Number 86017 Rev. 3, 24-Jun-98 BYT08P/600A/800A Vishay Telefunken 100 t rr – Reverse Recovery Time ( ns ) IF – Forward Current ( A ) 250 10 200 IF = 8A TC=100°C 150 1 100 50 0 0.1 0.01 0 94 9356 0.6 1.2 1.8 2.4 3.0 94 9360 0 50 100 150 200 250 300 350 VF – Forward Voltage ( V ) –dIF/dt – Forward Current Rate of Change ( A/ms ) Figure 3. Typ. Forward Current vs. Forward Voltage Figure 6. Reverse Recovery Time vs. Forward Current Rate of Change 1200 1000 800 600 400 200 0 IF = 8A TC=100°C t IRM – Reverse Recovery Time for IRM ( ns ) 120 IF = 8A TC=100°C 80 40 0 0 50 100 150 200 250 300 350 94 9361 Q rr – Reverse Recovery Charge ( nC ) 160 0 50 100 150 200 250 300 350 94 9358 –dIF/dt – Forward Current Rate of Change ( A/ms ) –dIF/dt – Forward Current Rate of Change ( A/ms ) Figure 4. Reverse Recovery Time for IRM vs. Forward Current Rate of Change 20 IRM – Reverse Recovery Current ( A ) Figure 7. Reverse Recovery Charge vs. Forward Current Rate of Change 15 IF = 8A TC=100°C 10 5 0 0 94 9359 50 100 150 200 250 300 350 –dIF/dt – Forward Current Rate of Change ( A/ms ) Figure 5. Reverse Recovery Current vs. Forward Current Rate of Change Document Number 86017 Rev. 3, 24-Jun-98 www.vishay.de • FaxBack +1-408-970-5600 3 (5) BYT08P/600A/800A Vishay Telefunken Dimensions in mm 14276 www.vishay.de • FaxBack +1-408-970-5600 4 (5) Document Number 86017 Rev. 3, 24-Jun-98 BYT08P/600A/800A Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 86017 Rev. 3, 24-Jun-98 www.vishay.de • FaxBack +1-408-970-5600 5 (5)