BYT52M

BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • Soft recovery characteristics • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 949539 • Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: SOD-57 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg APPLICATIONS • Fast rectification and switching diode PARTS TABLE PART BYT52A BYT52B BYT52D BYT52G BYT52J BYT52K BYT52M TYPE DIFFERENTIATION VR = 50 V; IFAV = 1.4 A VR = 100 V; IFAV = 1.4 A VR = 200 V; IFAV = 1.4 A VR = 400 V; IFAV = 1.4 A VR = 600 V; IFAV = 1.4 A VR = 800 V; IFAV = 1.4 A VR = 1000 V; IFAV = 1.4 A PACKAGE SOD-57 SOD-57 SOD-57 SOD-57 SOD-57 SOD-57 SOD-57 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART BYT52A BYT52B BYT52D Reverse voltage = repetitive peak reverse voltage See electrical characteristics BYT52G BYT52J BYT52K BYT52M Peak forward surge current Average forward current Non repetitive reverse avalanche energy Junction and storage temperature range tp = 10 ms, half sine wave On PC board l = 10mm BYT52J I(BR)R = 0.4 A BYT52K BYT52M SYMBOL VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR = VRRM IFSM IFAV IFAV ER ER ER Tj = Tstg VALUE 50 100 200 400 600 800 1000 50 0.85 1.4 10 10 10 - 55 to + 175 UNIT V V V V V V V A A A mJ mJ mJ °C Document Number: 86029 Rev. 1.7, 30-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M Vishay Semiconductors Fast Avalanche Sinterglass Diode MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified) PARAMETER Junction ambient TEST CONDITION Lead length l = 10 mm, TL = constant On PC board with spacing 25 mm SYMBOL RthJA RthJA VALUE 45 100 UNIT K/W K/W ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Reverse current Reverse recovery time TEST CONDITION IF = 1 A VR = VRRM VR = VRRM, Tj = 150 °C IF = 0.5 A, IR = 1 A, iR = 0.25 A PART SYMBOL VF IR IR trr MIN. TYP. MAX. 1.3 5 150 200 UNIT V μA μA ns TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) RthJA - Ther. Resist. Junction/Ambient (K/W) 120 1.6 IFAV - Average Forward Current (A) 100 80 60 l 40 20 TL = constant 0 0 949552 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 RthJA = 100 K/W PCB: d = 25 mm VR = VRRM half sinewave RthJA = 45 K/W I = 10 mm l 5 10 15 20 25 30 16329 0 20 40 60 80 100 120 140 160 180 l - Lead Length (mm) Tamb - Ambient Temperature (°C) Fig. 1 - Max. Thermal Resistance vs. Lead Length Fig. 3 - Max. Average Forward Current vs. Ambient Temperature 10 Tj = 175 °C 1 Tj = 25 °C 0.1 1000 VR = VRRM IR - Reverse Current (μA) 2.0 2.5 3.0 IF - Forward Current (A) 100 10 0.01 0.001 0 16328 0.5 1.0 1.5 1 25 16330 50 75 100 125 150 175 VF - Forward Voltage (V) Tj - Junction Temperature (°C) Fig. 2 - Max. Forward Current vs. Forward Voltage Fig. 4 - Max. Reverse Current vs. Junction Temperature www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 86029 Rev. 1.7, 30-Jul-10 BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M Fast Avalanche Sinterglass Diode Vishay Semiconductors PR - Reverse Power Dissipation (mW) 500 40 VR = VRRM f = 1 MHz 400 350 300 250 200 150 100 50 0 25 50 75 100 125 150 175 PR-Limit at 80 % VR PR-Limit at 100 % VR CD - Diode Capacitance (pF) 450 35 30 25 20 15 10 5 0 0.1 1 10 100 16331 Tj - Junction Temperature (°C) 16332 VR - Reverse Voltage (V) Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 6 - Diode Capacitance vs. Reverse Voltage PACKAGE DIMENSIONS in millimeters (inches): SOD-57 0.82 (0.032) max. 26 (1.024) min. 4 (0.157) max. 26 (1.024) min. Document Number: 86029 Rev. 1.7, 30-Jul-10 3.6 (0.142) max. 20543 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1