BYT53A, BYT53B, BYT53C, BYT53D, BYT53F, BYT53G
Vishay Semiconductors
Ultra Fast Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction • Hermetically sealed package • Low reverse current • Soft recovery characteristics • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC
949539
• Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: SOD-57 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg
APPLICATIONS
• Very fast rectification and switches • Switched mode power supplies • High-frequency inverter circuits
PARTS TABLE
PART BYT53A BYT53B BYT53C BYT53D BYT53F BYT53G TYPE DIFFERENTIATION VR = 50 V; IFAV = 1.9 A VR = 100 V; IFAV = 1.9 A VR = 150 V; IFAV = 1.9 A VR = 200 V; IFAV = 1.9 A VR = 300 V; IFAV = 1.9 A VR = 400 V; IFAV = 1.9 A PACKAGE SOD-57 SOD-57 SOD-57 SOD-57 SOD-57 SOD-57
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART BYT53A BYT53B Reverse voltage = repetitive peak reverse voltage See electrical characteristics BYT53C BYT53D BYT53F BYT53G Peak forward surge current Average forward current Non repetitive reverse avalanche energy Junction and storage temperature range tp = 10 ms, half sine wave l = 10 mm, TL = 25 °C I(BR)R = 1 A SYMBOL VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR = VRRM IFSM IFAV ER Tj = Tstg VALUE 50 100 150 200 300 400 50 1.9 20 - 55 to + 175 UNIT V V V V V V A A mJ °C
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER Junction ambient TEST CONDITION Lead length l = 10 mm, TL = constant On PC board with spacing 25 mm SYMBOL RthJA RthJA VALUE 45 100 UNIT K/W K/W
Document Number: 86030 Rev. 1.9, 04-Aug-10
For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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BYT53A, BYT53B, BYT53C, BYT53D, BYT53F, BYT53G
Vishay Semiconductors
Ultra Fast Avalanche Sinterglass Diode
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER Forward voltage Reverse current Reverse recovery time TEST CONDITION IF = 1 A IF = 1 A, Tj = 175 °C VR = VRRM VR = VRRM, Tj = 150 °C IF = 0.5 A, IR = 1 A, iR = 0.25 A PART SYMBOL VF VF IR IR trr MIN. TYP. MAX. 1.1 0.9 5 200 50 UNIT V V μA μA ns
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
RthJA - Ther. Resist. Junction/Ambient (K/W)
120
2.0
IFAV - Average Forward Current (A)
1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 RthJA = 100 K/W PCB: d = 25 mm
100 80 60 l 40 20 TL = constant 0 0
949552
VR = VRRM half sine wave RthJA = 45 K/W l = 10 mm
l
5
10
15
20
25
30
16334
80 100 120 140 160 180
l - Lead Length (mm)
Tamb - Junction Temperature (°C)
Fig. 1 - Max. Thermal Resistance vs. Lead Length
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
10 Tj = 175 °C 1 Tj = 25 °C 0.1
1000 VR = VRRM
IR - Reverse Current (μA)
IF - Forward Current (A)
100
10
0.01
0.001 0
16333
1 0.5 1 1.5 2 2.5 3
16335
25
50
75
100
125
150
175
VF - Forward Voltage (V)
Tj - Junction Temperature (°C)
Fig. 2 - Max. Forward Current vs. Forward Voltage
Fig. 4 - Max. Reverse Current vs. Junction Temperature
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For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 86030 Rev. 1.9, 04-Aug-10
BYT53A, BYT53B, BYT53C, BYT53D, BYT53F, BYT53G
Ultra Fast Avalanche Sinterglass Diode
Vishay Semiconductors
PR - Reverse Power Dissipation (mW)
220 200 180 160 140 120 100 80 60 40 20 0 25 50 75 100 125 150 175 PR - Limit at 80 % VR PR - Limit at 100 % VR
60
CD - Diode Capacitance (pF)
VR = VRRM
f = 1 MHz 50 40 30 20 10 0 0.1
16337
1
10
100
16336
Tj - Junction Temperature (°C)
VR - Reverse Voltage (V)
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 6 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
0.82 (0.032) max. 26 (1.024) min. 4 (0.157) max. 26 (1.024) min.
Document Number: 86030 Rev. 1.9, 04-Aug-10
3.6 (0.142) max. 20543
For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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Document Number: 91000 Revision: 11-Mar-11
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