BYT56B

BYT56B

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    BYT56B - Fast Avalanche Sinterglass Diode - Vishay Siliconix

  • 详情介绍
  • 数据手册
  • 价格&库存
BYT56B 数据手册
BYT56. Vishay Semiconductors Fast Avalanche Sinterglass Diode Features • • • • Glass passivated junction Hermetically sealed package Low reverse current Soft recovery characteristics e2 949588 • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Mechanical Data Case: SOD-64 Sintered glass case Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: approx. 858 mg Applications Very fast rectification and switching diode Parts Table Part BYT56A BYT56B BYT56D BYT56G BYT56J BYT56K BYT56M Type differentiation VR = 50 V; IFAV = 3 A VR = 100 V; IFAV = 3 A VR = 200 V; IFAV = 3 A VR = 400 V; IFAV = 3 A VR = 600 V; IFAV = 3 A VR = 800 V; IFAV = 3 A VR = 1000 V; IFAV = 3 A SOD-64 SOD-64 SOD-64 SOD-64 SOD-64 SOD-64 SOD-64 Package Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage = Repetitive peak reverse voltage Test condition see electrical characteristics Part BYT56A BYT56B BYT56D BYT56G BYT56J BYT56K BYT56M Peak forward surge current Average forward current Junction and storage temperature range Non repetitive reverse avalanche energy I(BR)R = 0.4 A tp = 10 ms, half sinewave on PC board l = 10 mm Symbol VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR = VRRM IFSM IFAV IFAV Tj = Tstg ER Value 50 100 200 400 600 800 1000 80 1.5 3 - 55 to + 175 10 Unit V V V V V V V A A A °C mJ Document Number 86032 Rev. 1.6, 13-Apr-05 www.vishay.com 1 BYT56. Vishay Semiconductors Maximum Thermal Resistance Tamb = 25 °C, unless otherwise specified Parameter Junction ambient Test condition l = 10 mm, TL = constant on PC board with spacing 25 mm Symbol RthJA RthJA Value 25 70 Unit K/W K/W Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Reverse current Reverse recovery time IF = 3 A VR = VRRM VR = VRRM, Tj = 150 °C IF = 0.5 A, IR = 1 A, iR = 0.25 A Test condition Symbol VF IR IR trr Min Typ. Max 1.4 5 150 100 Unit V µA µA ns Typical Characteristics (Tamb = 25 °C unless otherwise specified) RthJA - Therm. Resist. Junction/Ambient (K/W) 40 3.5 I FAV - Average Forward Current ( A ) 30 3.0 2.5 2.0 1.5 1.0 0.5 0 0 RthJA = 70 K/W PCB: d = 25 mm V R = VRRM half sinewave R thJA = 25 K/W l = 10 mm 20 l l 10 TL= constant 0 0 5 10 15 20 25 30 l - Lead Length ( mm ) 20 40 60 80 100 120 140 160 180 Tamb - Ambient Temperature ( ° C ) 94 9462 16366 Figure 1. Max. Thermal Resistance vs. Lead Length Figure 3. Max. Average Forward Current vs. Ambient Temperature 100 I F - Forward Current ( A) 1000 V R = VRRM I R - Reverse Current ( µA ) 10 Tj =175° C 1 Tj = 25 ° C 0.1 0.01 0.001 0 0.5 1.0 1.5 2.0 2.5 3.0 100 10 1 25 16367 50 75 100 125 150 175 16365 V F - Forward Voltage ( V ) Tj – Junction Temperature ( °C ) Figure 2. Forward Current vs. Forward Voltage Figure 4. Reverse Current vs. Junction Temperature www.vishay.com 2 Document Number 86032 Rev. 1.6, 13-Apr-05 BYT56. Vishay Semiconductors P - Reverse Power Dissipation ( mW ) R 450 400 350 300 250 200 150 100 50 0 25 50 75 100 125 PR -Limit @80 % VR V R = VRRM CD - Diode Capacitance ( pF ) 90 80 70 60 50 40 30 20 10 0 0.1 16369 f = 1 MHz PR -Limit @100 % VR 150 175 1 10 100 16368 Tj - Junction Temperature ( °C ) V R - Reverse Voltage ( V ) Figure 5. Max. Reverse Power Dissipation vs. Junction Temperature Figure 6. Diode Capacitance vs. Reverse Voltage Package Dimensions in mm (Inches) Sintered Glass Case SOD-64 Cathode Identification 4.3 (0.168) max. ISO Method E 1.35 (0.053) max. 26(1.014) min. 4.0 (0.156) max. 26 (1.014) min. 94 9587 Document Number 86032 Rev. 1.6, 13-Apr-05 www.vishay.com 3 BYT56. Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 4 Document Number 86032 Rev. 1.6, 13-Apr-05 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1
BYT56B
### 物料型号 - BYT56A:VR = 50 V, IFAV = 3 A - BYT56B:VR = 100 V, IFAV = 3 A - BYT56D:VR = 200 V, IFAV = 3 A - BYT56G:VR = 400 V, IFAV = 3 A - BYT56J:VR = 600 V, IFAV = 3 A - BYT56K:VR = 800 V, IFAV = 3 A - BYT56M:VR = 1000 V, IFAV = 3 A

### 器件简介 BYT56系列是Vishay Semiconductors生产的快速雪崩玻璃钝化二极管,具有玻璃钝化结、密封封装、低反向电流、软恢复特性、无铅组件,并符合RoHS和WEEE环保标准。

### 引脚分配 - 极性:色环表示阴极端。 - 安装位置:任意位置,重量约为858毫克。 - 引脚:镀层轴向引线,可按照MIL-STD-750, Method 2026进行焊接。

### 参数特性 - 反向电压:不同型号的反向电压(VRRM)从50V到1000V不等。 - 峰值正向浪涌电流:IFSM为80A。 - 平均正向电流:IFAV为1.5A,FAV为3A。 - 结温和存储温度范围:Tstg为-55至+175°C。 - 非重复反向雪崩能量:ER为10mJ。

### 功能详解 BYT56系列二极管适用于非常快速的整流和开关应用。

### 应用信息 - 用于非常快速的整流和开关二极管。

### 封装信息 - 封装类型:SOD-64烧结玻璃封装。
BYT56B 价格&库存

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