BYT77

BYT77.BYT78 Vishay Telefunken Fast Silicon Mesa Rectifiers Features D D D D D Glass passivated junction Hermetically sealed package Low reverse current Soft recovery characteristics Controlled avalanche characteristics Applications Fast ”soft recovery” rectifier 94 9588 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage g Peak forward surge current Average forward current Junction and storage temperature range Non repetitive reverse avalanche energy Test Conditions Type BYT77 BYT78 Symbol VR VR IFSM IFAV Tj=Tstg ER Value 800 1000 100 3 –65...+175 15 Unit V V A A °C mJ tp=10ms, half sinewave Tamb 45°C x I(BR)R=400mA, inductive load L=120mH Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions l=10mm, TL=constant on PC board with spacing 37.5mm Symbol RthJA RthJA Value 25 70 Unit K/W K/W Electrical Characteristics Tj = 25_C Parameter Forward voltage Reverse current Reverse recovery time Test Conditions IF=3A VR VR, Tj=150°C IF=0.5A, IR=1A, iR=0.25A Type Symbol VF IR IR trr Min Typ 1.0 1 60 Max 1.1 5 150 300 Unit V mA mA ns Document Number 86034 Rev. 3, 07-Dec-99 www.vishay.de • FaxBack +1-408-970-5600 1 (4) BYT77.BYT78 Vishay Telefunken Characteristics (Tj = 25_C unless otherwise specified) R thJA – Therm. Resist. Junction / Ambient ( K/W ) 40 T j – Junction Temperature (° C ) 240 200 VR RM 160 VR 120 80 RthJA=70K/W 40 0 25 30 94 9467 30 20 l 10 l 0 0 5 10 15 TL=constant 20 l – Lead Length ( mm ) 0 200 400 600 800 1000 94 9466 Reverse / Repetitive Peak Reverse Voltage ( V ) Figure 1. Max. Thermal Resistance vs. Lead Length Figure 4. Junction Temperature vs. Reverse/Repetitive Peak Reverse Voltage 1000 I FAV– Average Forward Current ( A ) 2.0 I R – Reverse Current ( mA ) Scattering Limit 100 1.6 1.2 0.8 0.4 0 0 10 f 20kHz RthJA=70K/W PCB v 1 VR = VR RM 0 40 80 120 160 200 0.1 80 120 160 200 94 9469 40 94 9468 Tamb – Ambient Temperature ( °C ) Tj – Junction Temperature ( °C ) Figure 2. Max. Average Forward Current vs. Ambient Temperature 4 I FAV– Average Forward Current ( A ) Figure 5. Reverse Current vs. Junction Temperature 100 IF – Forward Current ( A ) Tj = 175°C 10 3 2 1 Tj = 25°C 1 f 20kHz RthJA=25K/W L=10mm v 0.1 0 0 94 9471 0.01 40 80 120 160 200 94 9472 0 0.6 1.2 1.8 2.4 3.0 Tamb – Ambient Temperature ( °C ) VF – Forward Voltage ( V ) Figure 3. Max. Average Forward Current vs. Ambient Temperature Figure 6. Max. Forward Current vs. Forward Voltage www.vishay.de • FaxBack +1-408-970-5600 2 (4) Document Number 86034 Rev. 3, 07-Dec-99 BYT77.BYT78 Vishay Telefunken 80 CD – Diode Capacitance ( pF ) 60 40 20 f = 470kHz Tj = 25°C 0 0.1 1 10 100 94 9470 VR – Reverse Voltage ( V ) Figure 7. Typ. Diode Capacitance vs. Reverse Voltage Dimensions in mm Sintered Glass Case SOD 64 Weight max. 1.0 g Cathode Identification ∅ 4.3 max. technical drawings according to DIN specifications ∅ 1.35 max. 26 min. 4.2 max. 26 min. 94 9587 Document Number 86034 Rev. 3, 07-Dec-99 www.vishay.de • FaxBack +1-408-970-5600 3 (4) BYT77.BYT78 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.de • FaxBack +1-408-970-5600 4 (4) Document Number 86034 Rev. 3, 07-Dec-99