BYT77_10

BYT77, BYT78 Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • Soft recovery characteristics • Controlled avalanche characteristics 949588 MECHANICAL DATA Case: SOD-64 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 858 mg • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition APPLICATIONS • Fast “soft recovery” rectification diode PARTS TABLE PART BYT77 BYT78 TYPE DIFFERENTIATION VR = 800 V; IFAV = 3 A VR = 1000 V; IFAV = 3 A PACKAGE SOD-64 SOD-64 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Reverse voltage = repetitive peak reverse voltage Peak forward surge current Average forward current Non repetitive reverse avalanche energy Junction and storage temperature range TEST CONDITION See electrical characteristics tp = 10 ms, half sine wave Tamb ≤ 45 °C I(BR)R = 0.4 A PART BYT77 BYT78 SYMBOL VR = VRRM VR = VRRM IFSM IFAV ER Tj = Tstg VALUE 800 1000 100 3 10 - 55 to + 175 UNIT V V A A mJ °C MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified) PARAMETER Junction ambient TEST CONDITION Lead length l = 10 mm, TL = constant On PC board with spacing 25 mm SYMBOL RthJA RthJA VALUE 25 70 UNIT K/W K/W ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Reverse current Reverse recovery time TEST CONDITION IF = 3 A VR = VRRM VR = VRRM, Tj = 150 °C IF = 0.5 A, IR = 1 A, iR = 0.25 A PART SYMBOL VF IR IR trr MIN. TYP. 1 1 60 MAX. 1.2 5 150 250 UNIT V μA μA ns Document Number: 86034 Rev. 1.8, 30-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 BYT77, BYT78 Vishay Semiconductors Fast Avalanche Sinterglass Diode TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) RthJA - Ther. Resist. Junction/Ambient (K/W) 40 3.5 IFAV - Average Forward Current (A) 3.0 2.5 2.0 1.5 1.0 0.5 0 RthJA = 70 K/W PCB: d = 25 mm VR = VRRM half sinewave RthJA = 25 K/W I = 10 mm 30 20 l l 10 TL = constant 0 0 949466 5 10 15 20 25 30 16371 0 20 40 60 80 100 120 140 160 180 l - Lead Length (mm) Tamb - Ambient Temperature (°C) Fig. 1 - Max. Thermal Resistance vs. Lead Length Fig. 4 - Max. Average Forward Current vs. Ambient Temperature 240 1000 VR = VRRM VRRM VR Tj - Junction Temperature (°C) IR - Reverse Current (μA) 200 160 120 80 100 10 RthJA = 70 K/W 40 0 0 200 400 600 800 1000 1 25 16372 50 75 100 125 150 175 949467 VR, VRRM - Rev./Rep. Peak Rev. Voltage (V) Tj - Junction Temperature (°C) Fig. 2 - Junction Temperature vs. Reverse/Repetitive Peak Reverse Voltage Fig. 5 - Reverse Current vs. Junction Temperature PR - Reverse Power Dissipation (mW) 100 450 400 350 300 250 200 150 100 50 0 25 50 75 100 125 150 175 PR-Limit at 80 % VR PR-Limit at 100 % VR VR = VRRM IF - Forward Current (A) 10 Tj = 175 °C 1 Tj = 25 °C 0.1 0.01 0.001 0 16370 0.5 1.0 1.5 2.0 2.5 16373 VF - Forward Voltage (V) Tj - Junction Temperature (°C) Fig. 3 - Forward Current vs. Forward Voltage Fig. 6 - Max Reverse Power Dissipation vs. Junction Temperature www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 86034 Rev. 1.8, 30-Jul-10 BYT77, BYT78 Fast Avalanche Sinterglass Diode Vishay Semiconductors 90 CD - Diode Capacitance (pF) 80 70 60 50 40 30 20 10 0 0.1 1 10 f = 1 MHz 100 16374 VR - Reverse Voltage (V) Fig. 7 - Diode Capacitance vs. Reverse Voltage PACKAGE DIMENSIONS in millimeters (inches): SOD-64 Sintered Glass Case SOD-64 Cathode Identification 4.3 (0.168) max. 1.35 (0.053) max. 26(1.014) min. 4 (0.156) max. 26 (1.014) min. Document-No.: 6.563-5006.4-4 Rev. 3 - Date: 09.February.2005 94 9587 Document Number: 86034 Rev. 1.8, 30-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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