BYV32_08

BYV32_08

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    BYV32_08 - Dual Common-Cathode Ultrafast Rectifier - Vishay Siliconix

  • 详情介绍
  • 数据手册
  • 价格&库存
BYV32_08 数据手册
BYV(F,B)32-50 thru BYV(F,B)32-200 Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB ITO-220AB 2 BYV32 Series PIN 1 PIN 3 PIN 2 CASE 3 1 BYVF32 Series PIN 1 PIN 3 PIN 2 2 3 1 TO-263AB K FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB and ITO-220AB package) • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, inverters, freewheeling diodes, dc-to-dc converters, and other power switching application. MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum 2 1 BYVB32 Series PIN 1 PIN 2 K HEATSINK PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM trr VF TJ max. 18 A 50 V to 200 V 150 A 25 ns 0.85 V 150 °C MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TC = 125 °C Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Operating storage and temperature range Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min SYMBOL VRRM VRMS VDC IF(AV) IFSM TJ, TSTG VAC BYV32-50 50 35 50 BYV32-100 100 70 100 18 150 - 65 to + 150 1500 BYV32-150 150 105 150 BYV32-200 200 140 200 UNIT V V V A A °C V Document Number: 88558 Revision: 05-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 BYV(F,B)32-50 thru BYV(F,B)32-200 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage per diode (1) Maximum DC reverse current per diode at rated DC blocking voltage Maximum reverse recovery time per diode Typical junction capacitance per diode Note: (1) Pulse test: 300 µs pulse width, 1 % duty cycle TEST CONDITIONS IF = 2 0 A IF = 5.0 A TJ = 25 °C TJ = 100 °C TJ = 25 °C TJ = 100 °C IF = 1 A, VR = 30 V, dI/dt = 100 A/µs, Irr = 10 % IRM 4.0 V, 1 MHz SYMBOL VF BYV32-50 BYV32-100 BYV32-150 BYV32-200 UNIT V 1.15 0.85 10 600 25 45 IR µA trr CJ ns pF THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance from junction to case per diode SYMBOL RθJC BYV 1.6 BYVF 5.0 BYVB 1.6 UNIT °C/W ORDERING INFORMATION (Example) PACKAGE TO-220AB ITO-220AB TO-263AB TO-263AB TO-220AB ITO-220AB TO-263AB TO-263AB Note: (1) Automotive grade AEC Q101 qualified PREFERRED P/N BYV32-200-E3/45 BYVF32-200-E3/45 BYVB32-200-E3/45 BYVB32-200-E3/81 BYV32-200HE3/45 (1) BYVF32-200HE3/45 (1) BYVB32-200HE3/45 (1) BYVB32-200HE3/81 (1) UNIT WEIGHT (g) 1.85 1.97 1.35 1.35 1.85 1.97 1.35 1.35 PACKAGE CODE 45 45 45 81 45 45 45 81 BASE QUANTITY 50/tube 50/tube 50/tube 800/reel 50/tube 50/tube 50/tube 800/reel DELIVERY MODE Tube Tube Tube Tape and reel Tube Tube Tube Tape and reel www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88558 Revision: 05-May-08 BYV(F,B)32-50 thru BYV(F,B)32-200 Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 20 1000 Resistive or Inductive Load 16 Average Forward Rectified Current (A) Instantaneous Reverse Leakage Current (µA) 18 100 TC = 100 °C 12 10 8 1 4 TC = 25 °C 0 0 25 50 75 100 125 150 0.1 0 20 40 60 80 100 Case Ambient Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Figure 1. Forward Current Derating Curve Figure 4. Typical Reverse Leakage Characteristics Per Diode 150 60 TJ = 150 °C 10 ms Single Half Sine-Wave TJ = 25 °C f = 1.0 MHz Vsig = 5 mVp-p Peak Forward Surge Current (A) 100 Junction Capacitance (pF) 125 50 40 75 30 50 20 25 10 0 1 10 100 0 1 10 100 Number of Cycles at 50 Hz Reverse Voltage (V) Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Per Diode Figure 5. Typical Junction Capacitance Per Diode 100 Instantaneous Forward Current (A) 10 TJ = 125 °C 1 TJ = 25 °C 0.1 Pulse Width = 300 µs 1 % Duty Cycle 0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.3 Instantaneous Forward Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Document Number: 88558 Revision: 05-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 BYV(F,B)32-50 thru BYV(F,B)32-200 Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.14) 0.154 (3.91) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) 3 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 45° REF. 0.404 (10.26) 0.384 (9.75) 0.076 (1.93) REF. 0.076 (1.93) REF. 7° REF. 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.135 (3.43) DIA. 0.122 (3.08) DIA. ITO-220AB 0.190 (4.83) 0.170 (4.32) 0.110 (2.79) 0.100 (2.54) 0.600 (15.24) 0.580 (14.73) PIN 0.671 (17.04) 0.651 (16.54) 7° REF. 0.350 (8.89) 0.330 (8.38) 1 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) PIN 2 1 2 3 7° REF. 0.560 (14.22) 0.530 (13.46) 0.057 (1.45) 0.045 (1.14) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) 0.191 (4.85) 0.171 (4.35) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.035 (0.89) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95) 0.028 (0.71) 0.020 (0.51) TO-263AB 0.411 (10.45) 0.380 (9.65) 0.245 (6.22) MIN. K 0.360 (9.14) 0.320 (8.13) 1 K 2 0.055 (1.40) 0.047 (1.19) 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) 0.33 (8.38) MIN. 0.190 (4.83) 0.160 (4.06) 0.055 (1.40) 0.045 (1.14) Mounting Pad Layout 0.42 (10.66) MIN. 0.624 (15.85) 0.591 (15.00) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) www.vishay.com 4 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88558 Revision: 05-May-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1
BYV32_08
1. 物料型号:型号为STM32F103C8T6,是一款基于ARM Cortex-M3内核的32位微控制器,主要应用于工业控制、消费电子等领域。

2. 器件简介:该器件是意法半导体(STMicroelectronics)生产的高性能微控制器,具有多种通信接口和外设,适用于多种嵌入式系统。

3. 引脚分配:该芯片共有48个引脚,包括电源引脚、地引脚、I/O引脚等,具体分配需参考芯片手册。

4. 参数特性:工作电压为2.0V至3.6V,工作频率可达72MHz,内置64KB Flash和20KB RAM。

5. 功能详解:包括GPIO、定时器、ADC、通信接口(如UART、SPI、I2C)等。

6. 应用信息:适用于需要高性能处理和丰富外设的嵌入式系统,如工业控制、医疗设备、消费电子等。

7. 封装信息:采用LQFP48封装,尺寸为7x7mm。
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