BYV37_10

BYV37, BYV38 Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • Soft recovery characteristics • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 949539 • Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: SOD-57 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg APPLICATIONS • Fast “soft recovery” rectification diode PARTS TABLE PART BYV37 BYV38 TYPE DIFFERENTIATION VR = 800 V; IFAV = 2 A VR = 1000 V; IFAV = 2 A PACKAGE SOD-57 SOD-57 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Reverse voltage Peak forward surge current Average forward current Non repetitive reverse avalanche energy Junction and storage temperature range I(BR)R = 0.4 A TEST CONDITION See electrical characteristics tp = 10 ms, half sine wave PART BYV37 BYV38 SYMBOL VR = VRRM VR = VRRM IFSM IFAV ER Tj = Tstg VALUE 800 1000 50 2 10 - 55 to + 175 UNIT V V A A mJ °C MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified) PARAMETER Junction ambient TEST CONDITION Lead length l = 10 mm, TL = constant On PC board with spacing 25 mm SYMBOL RthJA RthJA VALUE 45 100 UNIT K/W K/W ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Reverse current Reverse recovery time Diode capacitance TEST CONDITION IF = 1 A VR = VRRM VR = VRRM, Tj = 150 °C IF = 0.5 A, IR = 1 A, iR = 0.25 A VR = 4 V, f = 1 MHz PART SYMBOL VF IR IR trr CD MIN. TYP. 1 15 MAX. 1.1 5 150 300 UNIT V μA μA ns pF www.vishay.com 128 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 86045 Rev. 1.7, 31-Mar-10 BYV37, BYV38 Fast Avalanche Sinterglass Diode TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Vishay Semiconductors RthJA - Ther. Resist. Junction/Ambient (K/W) 120 100 80 60 l 40 20 TL = constant 0 0 949552 10 IF - Forward Current (A) 1 Tj = 175 °C Tj = 25 °C 0.1 l 0.01 0.001 30 16343 5 10 15 20 25 0 0.4 0.8 1.2 1.6 2.0 l - Lead Length (mm) VF - Forward Voltage (V) Fig. 1 - Max. Thermal Resistance vs. Lead Length Fig. 4 - Forward Current vs. Forward Voltage PR - Reverse Power Dissipation (mW) 500 450 400 350 300 250 200 150 100 50 0 25 50 75 100 125 150 175 160 K/W BYV38 BYV37 RthJA = 45 K/W 100 K/W VR = VRRM 2.5 IFAV - Average Forward Current (A) VR = VRRM half sinewave 2.0 RthJA ≤ 45 K/W I = 10 mm 1.5 1.0 RthJA ≤ 100 K/W PCB: d = 25 mm 0.5 0 0 16344 20 40 60 80 100 120 140 160 180 15774 Tj - Junction Temperature (°C) Tamb - Ambient Temperature (°C) Fig. 2 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 5 - Max. Average Forward Current vs. Ambient Temperature 1000 VR = VRRM 35 f = 1 MHz CD - Diode Capacitance (pF) 30 25 20 15 10 5 0 0.1 IR - Reverse Current (A) 100 10 1 25 15775 50 75 100 125 150 175 15776 1 10 100 Tj - Junction Temperature (°C) VR - Reverse Voltage (V) Fig. 3 - Max. Reverse Current vs. Junction Temperature Fig. 6 - Typ. Diode Capacitance vs. Reverse Voltage Document Number: 86045 Rev. 1.7, 31-Mar-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 129 BYV37, BYV38 Vishay Semiconductors Fast Avalanche Sinterglass Diode PACKAGE DIMENSIONS in millimeters (inches): SOD-57 0.82 (0.032) max. 26 (1.024) min. 4 (0.157) max. 26 (1.024) min. www.vishay.com 130 3.6 (0.142) max. 20543 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 86045 Rev. 1.7, 31-Mar-10 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1