BYV98-200

BYV98-50, BYV98-100, BYV98-150, BYV98-200 Vishay Semiconductors Ultra Fast Avalanche Sinterglass Diode FEATURES • High reverse voltage • Glass passivated • Low reverse current • Low forward voltage drop • Hermetically sealed axial-leaded glass envelope 949588 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: SOD-64 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 858 mg APPLICATIONS • Switched mode power supplies • High-frequency inverter circuits PARTS TABLE PART BYV98-50 BYV98-100 BYV98-150 BYV98-200 TYPE DIFFERENTIATION VR = 50 V; IFAV = 4 A VR = 100 V; IFAV = 4 A VR = 150 V; IFAV = 4 A VR = 200 V; IFAV = 4 A PACKAGE SOD-64 SOD-64 SOD-64 SOD-64 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Reverse voltage = repetitive peak reverse voltage Peak forward surge current Average forward current Junction and storage temperature range Non repetitive reverse avalanche energy l(BR)R = 1 A TEST CONDITION PART BYV98-50 See electrical characteristics BYV98-100 BYV98-150 BYV98-200 tp = 10 ms, half sine wave Tamb = 30 °C, l = 10 mm SYMBOL VR = VRRM VR = VRRM VR = VRRM VR = VRRM IFSM IFAV Tj = Tstg ER VALUE 50 100 150 200 70 4 - 55 to + 175 20 UNIT V V V V A A °C mJ MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified) PARAMETER Junction ambient TEST CONDITION Lead length l = 10 mm, TL = constant SYMBOL RthJA VALUE 25 UNIT K/W Document Number: 86046 Rev. 1.7, 04-Aug-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 BYV98-50, BYV98-100, BYV98-150, BYV98-200 Vishay Semiconductors Ultra Fast Avalanche Sinterglass Diode ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Reverse current TEST CONDITION IF = 5 A VR = VRRM VR = VRRM, Tj = 150 °C BYV98-50 Reverse breakdown voltage IR = 100 μA BYV98-100 BYV98-150 BYV98-200 Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A PART SYMBOL VF IR IR V(BR)R V(BR)R V(BR)R V(BR)R trr MIN. 60 120 170 220 TYP. MAX. 1.1 10 200 35 UNIT V μA μA V V V V ns TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 120 180 P – Reverse Power Dissipation ( mW) R CD – Diode Capacitance ( pF ) V R = VRRM 100 80 60 40 BYV98–50 20 0 25 50 75 100 125 150 175 Tj – Junction Temperature ( °C ) RthJA = 25 K/W 70 K/W 150 K/W BYV98–150 BYV98–100 BYV98–200 160 140 120 100 80 60 40 20 0 0.1 1.0 10.0 V R – Reverse Voltage ( V ) 100.0 15784 17194 Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 3 - Diode Capacitance vs. Reverse Voltage 1000 V R = VRRM I R – Reverse Current (A) I FAV –Average Forward Current( A ) 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 15783 V R = VRRM half sinewave R thJA = 25 K/W l = 10 mm 100 10 R thJA = 70 K/W PCB: d = 25 mm 20 40 60 80 100 120 140 160 180 Tamb – Ambient Temperature ( °C ) 1 25 15785 50 75 100 125 150 175 Tj – Junction Temperature ( °C ) Fig. 2 - Max. Reverse Current vs. Junction Temperature Fig. 4 - Max. Average Forward Current vs. Ambient Temperature www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 86046 Rev. 1.7, 04-Aug-10 BYV98-50, BYV98-100, BYV98-150, BYV98-200 Ultra Fast Avalanche Sinterglass Diode Vishay Semiconductors 100.00 T j = 175°C IF – Forward Current (A) 10.00 Tj = 25 °C 1.00 0.10 0.01 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V F – Forward Voltage ( V ) 15782 Fig. 5 - Max. Forward Current vs. Forward Voltage PACKAGE DIMENSIONS in millimeters (inches): SOD-64 Sintered Glass Case SOD-64 Cathode Identification 4.3 (0.168) max. 1.35 (0.053) max. 26(1.014) min. 4 (0.156) max. 26 (1.014) min. Document-No.: 6.563-5006.4-4 Rev. 3 - Date: 09.February.2005 94 9587 Document Number: 86046 Rev. 1.7, 04-Aug-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1