BYW172F

BYW172D, BYW172F, BYW172G Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • Soft recovery characteristics • Low forward voltage drop 949588 • High pulse current capability • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: SOD-64 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 858 mg APPLICATIONS • Fast rectification diode in S.M.P.S PARTS TABLE PART BYW172D BYW172F BYW172G TYPE DIFFERENTIATION VR = 200 V; IFAV = 3 A VR = 300 V; IFAV = 3 A VR = 400 V; IFAV = 3 A PACKAGE SOD-64 SOD-64 SOD-64 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Reverse voltage = repetitive peak reverse voltage Peak forward surge current Average forward current Non repetitive reverse avalanche energy Junction and storage temperature range I(BR)R = 1 A TEST CONDITION See electrical characteristics tp = 10 ms, half sine wave PART BYW172D BYW172F BYW172G SYMBOL VR = VRRM VR = VRRM VR = VRRM IFSM IFAV ER Tj = Tstg VALUE 200 300 400 100 3 20 - 55 to + 175 UNIT V V V A A mJ °C MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified) PARAMETER Junction ambient TEST CONDITION Lead length l = 10 mm, TL = constant On PC board with spacing 25 mm SYMBOL RthJA RthJA VALUE 25 70 UNIT K/W K/W ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Reverse current Reverse recovery time TEST CONDITION IF = 3 A IF = 9 A VR = VRRM VR = VRRM, Tj = 100 °C IF = 0.5 A, IR = 1 A, iR = 0.25 A PART SYMBOL VF VF IR IR trr MIN. TYP. 75 MAX. 1.1 1.5 1 20 100 UNIT V V μA μA ns Document Number: 86096 Rev. 1.3, 30-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 BYW172D, BYW172F, BYW172G Vishay Semiconductors Fast Avalanche Sinterglass Diode TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) RthJA - Ther. Resist. Junction/Ambient (K/W) 40 1000 VR = VRRM 30 IR - Reverse Current (μA) 25 30 100 20 l l 10 10 TL = constant 0 0 949466 5 10 15 20 1 25 16389 50 75 100 125 150 175 l - Lead Length (mm) Tj - Junction Temperature (°C) Fig. 1 - Max. Thermal Resistance vs. Lead Length Fig. 4 - Max. Reverse Current vs. Junction Temperature PR - Reverse Power Dissipation (mW) 100 180 160 140 120 100 80 60 40 20 0 25 50 75 100 125 150 175 PR-Limit at 80 % VR PR-Limit at 100 % VR VR = VRRM IF - Forward Current (A) 10 Tj = 175 °C Tj = 25 °C 1 0.1 0.01 0.001 0 16387 0.5 1.0 1.5 2.0 2.5 16390 VF - Forward Voltage (V) Tj - Junction Temperature (°C) Fig. 2 - Max. Forward Current vs. Forward Voltage Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature 3.5 120 IFAV - Average Forward Current (A) 3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 RthJA = 70 K/W PCB: d = 25 mm CD - Diode Capacitance (pF) VR = VRRM half sinewave RthJA = 25 K/W I = 10 mm f = 1 MHz 100 80 60 40 20 0 0.1 16391 80 100 120 140 160 180 1 10 100 16388 Tamb - Ambient Temperature (°C) VR - Reverse Voltage (V) Fig. 3 - Max. Average Forward Current vs. Ambient Temperature Fig. 6 - Diode Capacitance vs. Reverse Voltage www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 86096 Rev. 1.3, 30-Jul-10 BYW172D, BYW172F, BYW172G Fast Avalanche Sinterglass Diode Vishay Semiconductors Zthp - Thermal Resist. for Pulse Cond. (K/W) 1000 VRRM = 600 V RthJA = 70 K/W 100 tp/T = 0.5 0.2 10 0.1 0.05 0.02 0.01 1 10-4 949562 Tamb = 25 °C 100 °C 45 °C 70 °C 10-3 10-2 10-1 10-0 101 102 100 101 102 tp - Pulse Length (s) IFRM - Repetitive Peak Forward Current (A) Fig. 7 - Thermal Response PACKAGE DIMENSIONS in millimeters (inches): SOD-64 Sintered Glass Case SOD-64 Cathode Identification 4.3 (0.168) max. 1.35 (0.053) max. 26(1.014) min. 4 (0.156) max. 26 (1.014) min. Document-No.: 6.563-5006.4-4 Rev. 3 - Date: 09.February.2005 94 9587 Document Number: 86096 Rev. 1.3, 30-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1