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BYW178

BYW178

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    BYW178 - Very Fast Silicon Mesa Rectifier - Vishay Siliconix

  • 数据手册
  • 价格&库存
BYW178 数据手册
BYW178 Vishay Telefunken Very Fast Silicon Mesa Rectifier Features D D D D D D Glass passivated junction Hermetically sealed package Low reverse current Soft recovery characteristics Very fast reverse recovery time Low reverse recovery peak current Applications Ultra fast rectifier for switching mode power supplies 94 9588 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage =Repetitive peak reverse voltage Peak forward surge current Repetitive peak forward current Average forward current Junction and storage temperature range Test Conditions Type Symbol VR=VRRM IFSM IFRM IFAV Tj=Tstg Value 800 80 15 3 –55...+175 Unit V A A A °C tp=10ms, half sinewave Maximum Thermal Resistance Tj = 25_C Parameter Junction lead Junction ambient Tj = 25_C Parameter Forward voltage Reverse current Test Conditions IF=3A VR=VRRM VR=VRRM, Tj=100°C Reverse recovery current IF=1A, diF/dt –50A/ms, VBatt=200V Reverse recovery time IF=1A, diF/dt –50A/ms, VBatt=200V,iR=0.25xIRM Reverse recovery time (JEDEC) IF=0.5A, IR=1A, iR=0.25A Type Symbol VF IR IR IRM trr trr Min Typ Max 1.9 1 20 Unit V mA mA A ns 60 ns Test Conditions l=10mm, TL=constant on PC board with spacing 37.5mm Symbol RthJL RthJA Value 25 70 Unit K/W K/W Electrical Characteristics x x 2.2 50 Document Number 86047 Rev. 2, 24-Jun-98 www.vishay.de • FaxBack +1-408-970-5600 1 (4) BYW178 Vishay Telefunken Characteristics (Tj = 25_C unless otherwise specified) R thJA – Therm. Resist. Junction / Ambient ( K/W ) 40 I FAV– Average Forward Current ( A ) 4 30 3 20 l 10 l 2 1 f 20kHz 0 RthJA=25K/W 0 40 80 L=10mm 120 160 200 v 0 0 5 10 15 TL=constant 20 25 30 94 9471 94 9570 l – Lead Length ( mm ) Tamb – Ambient Temperature ( °C ) Figure 1. Typ. Thermal Resistance vs. Lead Length Figure 3. Max. Average Forward Current vs. Ambient Temperature 5 2.0 1.6 1.2 0.8 0.4 0 0 40 80 120 160 200 f 20kHz RthJA=70K/W PCB I RM– Reverse Recovery Current ( A ) I FAV– Average Forward Current ( A ) dIF/dt=50A/ms 4 3 2 1 0 0.1 1 IF – Forward Current ( A ) 10 v 94 9468 Tamb – Ambient Temperature ( °C ) 94 9571 Figure 2. Max. Average Forward Current vs. Ambient Temperature Figure 4. Typ. Reverse Recovery Current vs. Forward Current www.vishay.de • FaxBack +1-408-970-5600 2 (4) Document Number 86047 Rev. 2, 24-Jun-98 BYW178 Vishay Telefunken Z thp – Thermal Resistance for Pulse Cond. (K/W) 1000 VR RM=600V RthJA=70K/W 100 tp/T=0.5 tp/T=0.2 10 tp/T=0.1 tp/T=0.05 0.02 1 10–4 tp/T=0.01 10–3 10–2 10–1 100 101 102 100 101 IFRM – Repetitive Peak Forward Current ( A ) 102 100°C 45°C 70°C Tamb= 25°C 94 9562 tp – Pulse Length ( s ) Figure 5. Thermal Response Dimensions in mm Sintered Glass Case SOD 64 Weight max. 1.0 g Cathode Identification ∅ 4.3 max. technical drawings according to DIN specifications ∅ 1.35 max. 26 min. 4.2 max. 26 min. 94 9587 Document Number 86047 Rev. 2, 24-Jun-98 www.vishay.de • FaxBack +1-408-970-5600 3 (4) BYW178 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.de • FaxBack +1-408-970-5600 4 (4) Document Number 86047 Rev. 2, 24-Jun-98
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