BYW32

BYW32, BYW33, BYW34, BYW35, BYW36 Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Low reverse current • Soft recovery characteristics • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 949539 • Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: SOD-57 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg APPLICATIONS • Fast rectification an switching diode for example for TV-line output circuits and switch mode power supply PARTS TABLE PART BYW32 BYW33 BYW34 BYW35 BYW36 TYPE DIFFERENTIATION VR = 200 V; IFAV = 2 A VR = 300 V; IFAV = 2 A VR = 400 V; IFAV = 2 A VR = 500 V; IFAV = 2 A VR = 600 V; IFAV = 2 A PACKAGE SOD-57 SOD-57 SOD-57 SOD-57 SOD-57 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART BYW32 BYW33 Reverse voltage = repetitive peak reverse voltage See electrical characteristics BYW34 BYW35 BYW36 Peak forward surge current Repetitive peak forward current Average forward current Non repetitive reverse avalanche energy Junction and storage temperature range ϕ = 180° I(BR)R = 0.4 A tp = 10 ms, half sine wave SYMBOL VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR = VRRM IFSM IFRM IFAV ER Tj = Tstg VALUE 200 300 400 500 600 50 12 2 10 - 55 to + 175 UNIT V V V V V A A A mJ °C MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified) PARAMETER Junction ambient TEST CONDITION Lead length l = 10 mm, TL = constant On PC board with spacing 25 mm SYMBOL RthJA RthJA VALUE 45 100 UNIT K/W K/W Document Number: 86048 Rev. 1.7, 30-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 BYW32, BYW33, BYW34, BYW35, BYW36 Vishay Semiconductors Fast Avalanche Sinterglass Diode ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Reverse current Reverse recovery time TEST CONDITION IF = 1 A VR = VRRM VR = VRRM, Tj = 150 °C IF = 0.5 A, IR = 1 A, iR = 0.25 A PART SYMBOL VF IR IR trr MIN. TYP. 0.95 1 60 MAX. 1.1 5 150 200 UNIT V μA μA ns TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 2.5 RthJA - Ther. Resist. Junction/Ambient (K/W) 120 100 80 60 l 40 20 TL = constant 0 0 949552 IFAV - Average Forward Current (A) VR = VRRM half sinewave 2.0 1.5 RthJA = 45 K/W I = 10 mm l 1.0 RthJA = 100 K/W PCB: d = 25 mm 0.5 0 30 16346 5 10 15 20 25 0 20 40 60 80 100 120 140 160 180 l - Lead Length (mm) Tamb - Ambient Temperature (°C) Fig. 1 - Max. Thermal Resistance vs. Lead Length Fig. 3 - Max. Average Forward Current vs. Ambient Temperature 100 1000 VR = VRRM IF - Forward Current (A) Tj = 175 °C Tj = 25 °C IR - Reverse Current (A) 10 100 1 0.1 10 0.01 0.001 0 16345 0.5 1.0 1.5 2.0 2.5 3.0 16347 1 25 50 75 100 125 150 175 VF - Forward Voltage (V) Tj - Junction Temperature (°C) Fig. 2 - Forward Current vs. Forward Voltage Fig. 4 - Reverse Current vs. Junction Temperature (°C) www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 86048 Rev. 1.7, 30-Jul-10 BYW32, BYW33, BYW34, BYW35, BYW36 Fast Avalanche Sinterglass Diode Vishay Semiconductors PR - Reverse Power Dissipation (mW) 300 VR = VRRM 250 200 150 100 50 0 25 50 75 100 125 150 175 PR-Limit at 80 % VR PR-Limit at 100 % VR 40 f = 1 MHz CD - Diode Capacitance (pF) 35 30 25 20 15 10 5 0 0.1 1 10 100 16348 Tj - Junction Temperature (°C) 16349 VR - Reverse Voltage (V) Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 6 - Diode Capacitance vs. Reverse Voltage Zthp - Thermal Resist. for Pulse Cond. (K/W) 1000 VRRM = 600 V RthJA = 100 K/W 100 tp/T = 0.5 0.2 0.1 10 0.02 70 °C 0.01 1 10-5 949561 Tamb = 25 °C 45 °C 100 °C 50 °C Single pulse 10-3 10-2 10-1 100 101 100 101 10-4 tp - Pulse Length (s) IFRM - Repetitive Peak Forward Current (A) Fig. 7 - Thermal Response PACKAGE DIMENSIONS in millimeters (inches): SOD-57 0.82 (0.032) max. 26 (1.024) min. 4 (0.157) max. 26 (1.024) min. Document Number: 86048 Rev. 1.7, 30-Jul-10 3.6 (0.142) max. 20543 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1