BYW82_10

BYW82, BYW83, BYW84, BYW85, BYW86 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Controlled avalanche characteristics • Low reverse current • High surge current loading 949588 • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: SOD-64 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 858 mg APPLICATIONS • Rectification, general purpose PARTS TABLE PART BYW82 BYW83 BYW84 BYW85 BYW86 TYPE DIFFERENTIATION VR = 200 V; IFAV = 3 A VR = 400 V; IFAV = 3 A VR = 600 V; IFAV = 3 A VR = 800 V; IFAV = 3 A VR = 1000 V; IFAV = 3 A PACKAGE SOD-64 SOD-64 SOD-64 SOD-64 SOD-64 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART BYW82 BYW83 Reverse voltage = repetitive peak reverse voltage See electrical characteristics BYW84 BYW85 BYW86 Peak forward surge current Repetitive peak forward current Average forward current Pulse avalanche peak power Pulse energy in avalanche mode, non repetitive (inductive load switch off) i2t-rating Junction and storage temperature range tp = 20 μs, half sine wave, Tj = 175 °C I(BR)R = 1 A, Tj = 175 °C tp = 10 ms, half sine wave SYMBOL VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR = VRRM IFSM IFRM IFAV PR ER i2t Tj = Tstg VALUE 200 400 600 800 1000 100 18 3 1000 20 40 - 55 to + 175 UNIT V V V V V A A A W mJ A2s °C MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified) PARAMETER Junction ambient TEST CONDITION Lead length l = 10 mm, TL = constant On PC board with spacing 25 mm SYMBOL RthJA RthJA VALUE 25 70 UNIT K/W K/W Document Number: 86051 Rev. 1.7, 25-Aug-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 161 BYW82, BYW83, BYW84, BYW85, BYW86 Vishay Semiconductors Standard Avalanche Sinterglass Diode ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Forward voltage Reverse current Breakdown voltage Diode capacitance Reverse recovery time Reverse recovery charge TEST CONDITION IF = 3 A VR = VRRM VR = VRRM, Tj = 100 °C IR = 100 μA, tp/T = 0.01, tp = 0.3 ms VR = 4 V, f = 1 MHz IF = 0.5 A, IR = 1 A, iR = 0.25 A IF = 1 A, dI/dt = 5 A/μs, VR = 50 V lF = 1 A, dI/dt = 5 A/μs SYMBOL VF IR IR V(BR) CD trr trr Qrr MIN. TYP. 0.1 5 40 3.5 4.5 8 MAX 1 1 10 1600 60 5 7.5 12 UNIT V μA μA V pF μs μs μC TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 40 100 RthJA - Therm. Resist. Junction/Ambient (K/W) 30 IF - Forward Current (A) 10 Tj = 175 °C 1 Tj = 25 °C 0.1 20 l 10 l 0.01 0 0 94 9563 TL = constant 5 10 15 20 25 30 0.001 0 16360 0.4 0.8 1.2 1.6 2.0 I - Lead Length (mm) VF - Forward Voltage (V) Fig. 1 - Max. Thermal Resistance vs. Lead Length Fig. 3 - Forward Current vs. Forward Voltage IFAV - Average Forward Current (A) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 20 40 60 80 100 120 140 160 180 RthJA = 70 K/W PCB: d = 25 mm VR = VRRM half sinewave RthJA = 25 K/W I = 10 mm PR - Reverse Power Dissipation (mW) 350 VR = VRRM 300 250 200 150 100 50 0 25 50 75 100 125 150 175 PR-Limit at 80 % VR PR-Limit at 100 % VR 16361 Tamb - Ambient Temperature (°C) 16363 Tj - Junction Temperature (°C) Fig. 2 - Max. Average Forward Current vs. Ambient Temperature Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature www.vishay.com 162 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 86051 Rev. 1.7, 25-Aug-10 BYW82, BYW83, BYW84, BYW85, BYW86 Standard Avalanche Sinterglass Diode 1000 100 Vishay Semiconductors CD - Diode Capacitance (pF) VR = VRRM f = 1 MHz 80 IR - Reverse Current (A) 100 60 40 10 20 1 25 16362 0 50 75 100 125 150 175 16364 0.1 1 10 100 Tj - Junction Temperature (°C) VR - Reverse Voltage (V) Fig. 5 - Reverse Current vs. Junction Temperature Zthp - Thermal Resistance for Pulse Cond. (K/W) Fig. 6 - Diode Capacitance vs. Reverse Voltage 1000 100 tp/T = 0.5 tp/T = 0.2 10 tp/T = 0.1 tp/T = 0.05 tp/T = 0.02 1 10 -4 94 9568 V RRM = 1000 V RthJA = 70 K/W Tamb = 25°C 45 °C tp/T = 0.01 70°C 100°C 60 °C 10 -3 10 -2 10 -1 10 0 10 1 10 -1 tp - Pulse Length (s) 10 0 10 1 IFRM - Repetitive Peak Forward Current (A) Fig. 7 - Thermal Response PACKAGE DIMENSIONS in millimeters (inches): SOD-64 Sintered Glass Case SOD-64 Cathode Identification 4.3 (0.168) max. 1.35 (0.053) max. 26(1.014) min. 4 (0.156) max. 26 (1.014) min. Document-No.: 6.563-5006.4-4 Rev. 3 - Date: 09.February.2005 94 9587 Document Number: 86051 Rev. 1.7, 25-Aug-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 163 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1