BYX82, BYX83, BYX84, BYX85, BYX86
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction • Hermetically sealed package • Low reverse current • High surge current loading • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC
949539
• Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: SOD-57 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg
APPLICATIONS
• Rectification, general purpose
PARTS TABLE
PART BYX82 BYX83 BYX84 BYX85 BYX86 TYPE DIFFERENTIATION VR = 200 V; IFAV = 2 A VR = 400 V; IFAV = 2 A VR = 600 V; IFAV = 2 A VR = 800 V; IFAV = 2 A VR = 1000 V; IFAV = 2 A PACKAGE SOD-57 SOD-57 SOD-57 SOD-57 SOD-57
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART BYX82 BYX83 Reverse voltage = repetitive peak reverse voltage See electrical characteristics BYX84 BYX85 BYX86 Peak forward surge current Repetitive peak forward current Average forward current i2 * t-rating Junction and storage temperature range Tamb ≤ 45 °C tp = 10 ms, half sine wave SYMBOL VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR = VRRM IFSM IFRM IFAV i2 * t Tj = Tstg VALUE 200 400 600 800 1000 50 10 2 8 - 55 to + 175 UNIT V V V V V A A A A2 * s °C
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER Junction ambient TEST CONDITION Lead length l = 10 mm, TL = constant On PC board with spacing 25 mm SYMBOL RthJA RthJA VALUE 45 100 UNIT K/W K/W
Document Number: 86052 Rev. 1.6, 09-Aug-10
For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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BYX82, BYX83, BYX84, BYX85, BYX86
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER Forward voltage Reverse current Diode capacitance Reverse recovery time Reverse recovery charge TEST CONDITION IF = 1 A VR = VRRM VR = VRRM, Tj = 100 °C VR = 4 V, f = 1 MHz IF = 0.5 A, IR = 1 A, iR = 0.25 A IF = IR = 1 A, dI/dt = 5 A/μs SYMBOL VF IR IR CD trr Qrr MIN. TYP. 0.9 0.1 10 20 2 3 MAX 1 1 25 4 6 UNIT V μA μA pF μs μC
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
RthJA –Therm. Resist. Junction/ Ambient ( K/W) 120 l 100 80 60 40 20 TL= constant l IF – Forward Current (A )
10
1
Tj = 175°C
Tj = 25°C 0.1
Scattering Limits
0 0 5 10 15 20 25 30
94 9573
0.01 0 0.6 1.2 1.8 2.4 3.0
l – Lead Length ( mm )
94 9572
V F – Forward Voltage ( V )
Fig. 1 - Max. Thermal Resistance vs. Lead Length
Fig. 3 - Forward Current vs. Forward Voltage
240
30
RthJA ≤ 57 K/W RthJA ≤ 100 K/W V RRM VR BYX 82 BYX 83 BYX 84 BYX 85 BYX 86 CD – Diode Capacitance ( pF ) RthJA ≤ 35 K/W
Tj – Junction Temperature ( °C )
200 160 120 80 40 0
24
18
12 6 0 0.1 1 f = 1 MHz Tj = 25°C 10 100
94 9579
1600 0 400 800 1200 Reverse / Repetitive Peak Reverse Voltage ( V )
94 9574
V R – Reverse Voltage ( V )
Fig. 2 - Junction Temperature vs. Reverse/Repetitive Peak Reverse Voltage
Fig. 4 - Typ. Diode Capacitance vs. Reverse Voltage
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For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 86052 Rev. 1.6, 09-Aug-10
BYX82, BYX83, BYX84, BYX85, BYX86
Standard Avalanche Sinterglass Diode
Vishay Semiconductors
Zthp–Thermal Resistance for PulseCond.(K/W)
1000 V RRM ≤ 200 V RthJA ≤ 100 K/W 100 tp/T = 0.5 tp/T = 0.2 tp/T = 0.1 tp/T = 0.05 0.02 0.01 1 10–3 Single Pulse 10–2 10–1 100 101 10 0 101 102 I FRM – Repetitive Peak Forward Current ( A ) Tamb = 25°C Tamb =100 °C Tamb = 125 °C Tamb = 150 °C Tamb = 45 ° C Tamb = 70°C
10
94 9575
tp – Pulse Length ( s )
Fig. 5 - Thermal Response
Zthp– Thermal Resistance for PulseCond.(K/W)
1000 V RRM ≤ 1000 V t ≤ 10 μs 100 tp/T = 0.5 tp/T = 0.2 tp/T = 0.1 tp/T = 0.05 0.02 0.01 1 10–3 Single Pulse 10–2 10–1 100 101 10–1 100 101 I FRM – Repetitive Peak Forward Current ( A ) Tamb =100°C RthJA ≤ 100 K/W Tamb = 45°C Tamb = 60°C Tamb = 70°C Tamb = 25°C
10
94 9578
tp – Pulse Length ( s )
Fig. 6 - Thermal Response
Zthp– Thermal Resistance for Pulse Cond.(K/W)
1000 V RRM ≤ 200 V RthJA ≤ 57 K/W Tamb = 25°C Tamb = 70°C Tamb = 100°C Tamb = 125°C Tamb = 150°C Single Pulse 10–2 10–1 100 100 101 I FRM – Repetitive Peak Forward Current ( A ) Tamb = 45°C
100 tp/T = 0.5 10 tp/T = 0.2 tp/T = 0.1 tp/T = 0.05 tp/T = 0.02 tp/T = 0.01 10–3
1 10–4
94 9577
tp – Pulse Length ( s )
Fig. 7 - Thermal Response
Document Number: 86052 Rev. 1.6, 09-Aug-10
For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com 3
BYX82, BYX83, BYX84, BYX85, BYX86
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
Zthp–Thermal Resistance for Pulse Cond.(K/W)
1000 V RRM ≤ 1000 V t ≤ 10 μs RthJA ≤ 57 K/W tp/T = 0.5 10 tp/T = 0.2 tp/T = 0.1 tp/T = 0.05 tp/T = 0.02 tp/T = 0.01 1 –4 10 10–3 Single Pulse 10–2 10–1 100 Tamb = 125°C 100 101 I FRM – Repetitive Peak Forward Current ( A ) 100°C
100
Tamb = 25 °C Tamb = 45 °C 70°C
94 9576
tp – Pulse Length ( s )
Fig. 8 - Thermal Response
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
0.82 (0.032) max. 26 (1.024) min. 4 (0.157) max. 26 (1.024) min.
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3.6 (0.142) max. 20543
For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 86052 Rev. 1.6, 09-Aug-10
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Document Number: 91000 Revision: 11-Mar-11
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