BZD27 Series
New Product
Vishay Semiconductors
formerly General Semiconductor
VZ Range 3.6 to 200V TVS VWM Range 6.2 to 160V Power Dissipation 2.3W
Zener Diodes
DO-219AB (SMF)
Cathode Band
Top View
1.8 ± 0.1
1.0 ± 0.2
5° 0.98 ± 0.1 5°
Detail Z enlarged Z
2.8 ± 0.1 0.05 - 0.30
nted ate P
Mounting Pad Layout
1.6 1.2
0.60 ± 0.25
1.2
Dimensions in millimeters
0.00 – 0.10
3.7 ± 0.2
Mechanical Data
Case: JEDEC DO-219 Plastic Case Weight: approx. 0.01g Packaging codes-options: G1-10K per 13” reel (8mm tape), 50K/box G2-3K per 7” reel (8mm tape), 30K/box
Features
• Silicon Planar Power Zener Diodes. • Low profile surface-mount package. • Zener and TVS specification.
Maximum Ratings and Thermal Characteristics
Parameter Power Dissipation at TL = 105°C Power Dissipation at TA = 25°C Non-repetitive peak pulse power dissipation with 100µs square pulse (2) Non-repetitive peak pulse power dissipation with 10/1000µs waveform (BZ027-C7V5 to -C200) (2) Thermal Resistance Junction to Ambient Air (1) Thermal Resistance Junction to Lead Maximum Junction Temperature Storage Temperature Range
Notes: (1) Mounted on epoxy-glass PCB with 3 x 3mm Cu pads (≥ 40µm thick) (2) TJ = 25°C prior to surge
(TA = 25°C unless otherwise noted)
Symbol Ptot Ptot PZSM PRSM RθJA RθJL Tj TS
Value 2.3 0.8
(1)
Unit W W W W °C/W °C/W °C °C
300 150 188 30 175 – 65 to +175
Document Number 88311 06-May-02
www.vishay.com 1
BZD27 Series
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
Total Series (TJ = 25°C unless otherwise noted)
Parameter Forward voltage Symbol VF Conditions IF = 0.2A Minimum – Maximum 1.2 Unit V
When used as voltage regulator diodes (TJ = 25°C unless otherwise noted)
Working Voltage Marking Code D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 F0 F1 F2 F3 F4 F5 F6 F7 VZ (V) @ IZ Nom. Max. 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 3.8 4.1 4.6 5.0 5.4 6.0 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 28.9 32 35 38 41 46 50 Differential Resistance rdif (Ω) @ IZ Typ. Max. 4 4 4 3 3 2 2 1 1 1 2 2 4 4 5 5 6 6 6 6 7 7 8 8 21 21 24 24 8 8 7 7 6 4 3 3 2 2 4 4 7 7 10 10 15 15 15 15 15 15 15 15 40 40 45 45 Temperature Coefficient Test Current Reverse Current at Reverse Voltage VR (V) 1 1 1 1 1 2 2 3 3 3 5 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36
Type BZD27-C3V6P BZD27-C3V9P BZD27-C4V3P BZD27-C4V7P BZD27-C5V1P BZD27-C5V6P BZD27-C6V2P BZD27-C6V8P BZD27-C7V5P BZD27-C8V2P BZD27-C9V1P BZD27-C10P BZD27-C11P BZD27-C12P BZD27-C13P BZD27-C15P BZD27-C16P BZD27-C18P BZD27-C20P BZD27-C22P BZD27-C24P BZD27-C27P BZD27-C30P BZD27-C33P BZD27-C36P BZD27-C39P BZD27-C43P BZD27-C47P
Min. 3.4 3.7 4.0 4.4 4.8 5.2 5.8 6.4 7.0 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 25.1 28 31 34 37 40 44
αZ @ IZ (%/°C) Min. Max.
– 0.14 – 0.14 – 0.12 – 0.10 – 0.08 – 0.04 – 0.01 0.00 0.00 0.03 0.03 0.05 0.05 0.05 0.05 0.05 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.07 0.07 – 0.04 – 0.04 – 0.02 0.00 0.02 0.04 0.06 0.07 0.07 0.08 0.08 0.09 0.10 0.10 0.10 0.10 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.12 0.12
IZT (mA) IR (µA)Max 100 100 100 100 100 100 100 100 100 100 50 50 50 50 50 50 25 25 25 25 25 25 25 25 10 10 10 10 100 50 25 10 5 10 5 10 50 10 10 7 4 3 2 1 1 1 1 1 1 1 1 1 1 1 1 1
www.vishay.com 2
Document Number 88311 06-May-02
BZD27 Series
Vishay Semiconductors
formerly General Semiconductor
When used as voltage regulator diodes (TJ = 25°C unless otherwise noted)
Working Voltage Marking Code F8 F9 G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 H0 H1 H2 VZ (V) @ IZ Nom. Max. 51 56 62 68 75 82 91 100 110 120 130 150 160 180 200 54 60 66 72 79 87 96 106 116 127 141 156 171 191 212 Differential Resistance rdif (Ω) @ IZ Typ. Max. 25 25 25 25 30 30 60 60 80 80 110 130 150 180 200 60 60 80 80 100 100 200 200 250 250 300 300 350 400 500 Temperature Coefficient Test Current Reverse Current at Reverse Voltage VR (V) 39 43 47 51 56 62 68 75 82 91 100 110 120 130 150
Type BZD27-C51P BZD27-C56P BZD27-C62P BZD27-C68P BZD27-C75P BZD27-C82P BZD27-C91P BZD27-C100P BZD27-C110P BZD27-C120P BZD27-C130P BZD27-C150P BZD27-C160P BZD27-C180P BZD27-C200P
Min. 48 52 58 64 70 77 85 94 104 114 124 138 153 168 188
αZ @ IZ (%/°C) Min. Max.
0.07 0.07 0.08 0.08 0.08 0.08 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.12 0.12 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13
IZT (mA) IR (µA)Max 10 10 10 10 10 10 5 5 5 5 5 5 5 5 5 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1
Document Number 88311 06-May-02
www.vishay.com 3
BZD27 Series
Vishay Semiconductors
formerly General Semiconductor
When used as transient suppressor diodes (TJ = 25°C unless otherwise noted)
Rev. Breakdown Voltage Type BZD27-C7V5P BZD27-C8V2P BZD27-C9V1P BZD27-C10P BZD27-C11P BZD27-C12P BZD27-C13P BZD27-C15P BZD27-C16P BZD27-C18P BZD27-C20P BZD27-C22P BZD27-C24P BZD27-C27P BZD27-C30P BZD27-C33P BZD27-C36P BZD27-C39P BZD27-C43P BZD27-C47P BZD27-C51P BZD27-C56P BZD27-C62P BZD27-C68P BZD27-C75P BZD27-C82P BZD27-C91P BZD27-C100P BZD27-C110P BZD27-C120P BZD27-C130P BZD27-C150P BZD27-C160P BZD27-C180P BZD27-C200P V(BR)R (V) at Itest Min. 7.0 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 25.1 28 31 34 37 40 44 48 52 58 64 70 77 85 94 104 114 124 138 153 168 188 Temperature Coefficient Test Current Itest (mA) 100 100 50 50 50 50 50 50 25 25 25 25 25 25 25 25 10 10 10 10 10 10 10 10 10 10 5 5 5 5 5 5 5 5 5 Clamping Voltage VC (V) Max. 11.3 12.3 13.3 14.8 15.7 17.0 18.9 20.9 22.9 25.6 28.4 31.0 33.8 38.1 42.2 46.2 50.1 54.1 60.7 65.5 70.8 78.6 86.5 94.4 103.5 114 126 139 152 167 185 204 224 249 276 at IRSM (A)(1) 13.3 12.2 11.3 10.1 9.6 8.8 7.9 7.2 6.6 5.9 5.3 4.8 4.4 3.9 3.6 3.2 3.0 2.8 2.5 2.3 2.1 1.9 1.7 1.6 1.5 1.3 1.2 1.1 1.0 0.90 0.81 0.73 0.67 0.60 0.54 Reverse Current at Stand-Off Voltage IR (µA) Max. 1500 1200 100 20 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 at VWM (V) 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 130 150 160
αZ @ Itest (%/°C) Min. Max.
0.00 0.03 0.03 0.05 0.05 0.05 0.05 0.05 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.07 0.07 0.07 0.07 0.08 0.08 0.08 0.08 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.07 0.08 0.08 0.09 0.10 0.10 0.10 0.10 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.12 0.12 0.12 0.12 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13
Note: (1) Non-repetitive peak reverse current in accordance with “IEC 60-1, Section 8” (10/1000 µs pulse); see Fig. 8.
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Document Number 88311 06-May-02
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