BZD27C110P-M

BZD27C3V6P-M to BZD27C200P-M www.vishay.com Vishay Semiconductors Zener Diodes with Surge Current Specification FEATURES • Sillicon planar Zener diodes • Low profile surface-mount package • Zener and surge current specification • Low leakage current • Excellent stability • High temperature soldering: 260 °C/10 s at terminals • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC UNIT V mA PRIMARY CHARACTERISTICS PARAMETER VZ range nom. Test current IZT VZ specification Int. construction VALUE 3.6 to 200 5 to 100 Pulse current Single • Halogen-free according to IEC 61249-2-21 definition ORDERING INFORMATION DEVICE NAME BZD27C3V6P-M to BZD27C200P-M BZD27C3V6P-M to BZD27C200P-M ORDERING CODE BZD27C3V6P-M to BZD27C200P-M-series-08 BZD27C3V6P-M to BZD27C200P-M-series-18 TAPED UNITS PER REEL 3000 per 7" reel (8mm tape) 10 000 per 13" reel (8 mm tape) MINIMUM ORDER QUANTITY 15 000/box 10 000/box PACKAGE PACKAGE NAME DO-219AB (SMF) WEIGHT 15 mg MOLDING COMPOUND MOISTURE SENSITIVITY FLAMMABILITY RATING LEVEL UL 94 V-0 MSL level 1 (according J-STD-020) SOLDERING CONDITIONS 260 °C/10 s at terminals ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Power dissipation TEST CONDITION TL = 80 °C TA = 25 °C (1) 100 μs square pulse Non repetitive peak surge power dissipation (2) 10/1000 μs waveform (BZD27-C7V5P-M to BZD27-C100P-M) 10/1000 μs waveform (BZD27-C110P-M to BZD27-C200P-M) Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads ( 40 μm thick) SYMBOL Ptot Ptot PZSM PRSM PRSM RthJL RthJA Tj Tstg VALUE 2300 800 300 150 100 30 180 150 - 55 to + 150 UNIT mW mW W W W K/W K/W °C °C Junction to lead Junction to ambient air Junction temperature Storage temperature range Notes (1) Mounted on epoxy-glass PCB with 3 mm x 3 mm Cu pads ( 40 μm thick) (2) T = 25 °C prior to surge J Rev. 1.2, 29-Nov-11 Document Number: 83307 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZD27C3V6P-M to BZD27C200P-M www.vishay.com Vishay Semiconductors ZENER VOLTAGE RANGE (1) TEST CURRENT IZT1 mA MAX. 3.8 4.1 4.6 5 5.4 6 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 28.9 32 35 38 41 46 50 54 60 66 72 79 87 96 106 116 127 141 156 171 191 212 100 100 100 100 100 100 100 100 100 100 50 50 50 50 50 50 25 25 25 25 25 25 25 25 10 10 10 10 10 10 10 10 10 10 5 5 5 5 5 5 5 5 5 REVERSE CURRENT I R at V R μA MAX. 100 50 25 10 5 10 5 10 50 10 10 7 4 3 2 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 2 2 3 3 3 5 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 130 150 V TYP. 4 4 4 3 3 2 2 1 1 1 2 2 4 4 5 5 6 6 6 6 7 7 8 8 21 21 24 24 25 25 25 25 30 30 60 60 80 80 110 130 150 180 200 DYNAMIC RESISTANCE ZZ at IZT1  MAX. 8 8 7 7 6 4 3 3 2 2 4 4 7 7 10 10 15 15 15 15 15 15 15 15 40 40 45 45 60 60 80 80 100 100 200 200 250 250 300 300 350 400 500 MIN. - 0.14 - 0.14 - 0.12 - 0.1 - 0.08 - 0.04 - 0.01 0 0 0.03 0.03 0.05 0.05 0.05 0.05 0.05 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.07 0.07 0.07 0.07 0.08 0.08 0.08 0.08 0.08 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 TEMPERATURE COEFFICIENT VZ at IZT1 %/°C MAX. - 0.04 - 0.04 - 0.02 0 0.02 0.04 0.06 0.07 0.07 0.08 0.08 0.09 0.1 0.1 0.1 0.1 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.12 0.12 0.12 0.12 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) MARKING CODE MIN. BZD27C3V6P-M BZD27C3V9P-M BZD27C4V3P-M BZD27C4V7P-M BZD27C5V1P-M BZD27C5V6P-M BZD27C6V2P-M BZD27C6V8P-M BZD27C7V5P-M BZD27C8V2P-M BZD27C9V1P-M BZD27C10P-M BZD27C11P-M BZD27C12P-M BZD27C13P-M BZD27C15P-M BZD27C16P-M BZD27C18P-M BZD27C20P-M BZD27C22P-M BZD27C24P-M BZD27C27P-M BZD27C30P-M BZD27C33P-M BZD27C36P-M BZD27C39P-M BZD27C43P-M BZD27C47P-M BZD27C51P-M BZD27C56P-M BZD27C62P-M BZD27C68P-M BZD27C75P-M BZD27C82P-M BZD27C91P-M BZD27C100P-M BZD27C110P-M BZD27C120P-M BZD27C130P-M BZD27C150P-M BZD27C160P-M BZD27C180P-M BZD27C200P-M N0 N1 N2 N3 N4 N5 N6 N7 N8 N9 O0 O1 O2 O3 O4 O5 O6 O7 O8 O9 P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 Q0 Q1 Q2 Q3 Q4 Q5 Q6 Q7 Q8 Q9 R0 R1 R2 3.4 3.7 4 4.4 4.8 5.2 5.8 6.4 7 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 25.1 28 31 34 37 40 44 48 52 58 64 70 77 85 94 104 114 124 138 153 168 188 PART NUMBER VZ at IZT1 V NOM. 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 130 150 160 180 200 Notes • Electrical characteristics when used as regulator diodes • Maximum VF = 1.2 V, at IF = 0.2 A (1) Pulse test: t  5 ms p Rev. 1.2, 29-Nov-11 Document Number: 83307 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZD27C3V6P-M to BZD27C200P-M www.vishay.com Vishay Semiconductors TEST CURRENT IZT1 mA MAX. 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 28.9 32 35 38 41 46 50 54 60 66 72 79 87 96 106 116 127 141 156 171 191 212 100 100 50 50 50 50 50 50 25 25 25 25 25 25 25 25 10 10 10 10 10 10 10 10 10 10 5 5 5 5 5 5 5 5 5 REVERSE CURRENT IR at VR μA MAX. 1500 1200 100 20 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 130 150 160 V CLAMPING VOLTAGE VC at IRSM (1) V MAX. 11.3 12.3 13.3 14.8 15.7 17 18.9 20.9 22.9 25.6 28.4 31 33.8 38.1 42.2 46.2 50.1 54.1 60.7 65.5 70.8 78.6 86.5 94.4 103.5 114 126 139 139 152 169 187 205 229 254 13.3 12.2 11.3 10.1 9.6 8.8 7.9 7.2 6.6 5.9 5.3 4.8 4.4 3.9 3.6 3.2 3 2.8 2.5 2.3 2.1 1.9 1.7 1.6 1.5 1.3 1.2 1.1 0.72 0.65 0.59 0.53 0.48 0.43 0.39 A MIN. 0 0.03 0.03 0.05 0.05 0.05 0.05 0.05 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.07 0.07 0.07 0.07 0.08 0.08 0.08 0.08 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 TEMPERATURE COEFFICIENT VZ at IZT1 %/C MAX. 0.07 0.08 0.08 0.09 0.1 0.1 0.1 0.1 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.12 0.12 0.12 0.12 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) ZENER VOLTAGE RANGE PART NUMBER MARKING CODE MIN. BZD27C7V5P-M BZD27C8V2P-M BZD27C9V1P-M BZD27C10P-M BZD27C11P-M BZD27C12P-M BZD27C13P-M BZD27C15P-M BZD27C16P-M BZD27C18P-M BZD27C20P-M BZD27C22P-M BZD27C24P-M BZD27C27P-M BZD27C30P-M BZD27C33P-M BZD27C36P-M BZD27C39P-M BZD27C43P-M BZD27C47P-M BZD27C51P-M BZD27C56P-M BZD27C62P-M BZD27C68P-M BZD27C75P-M BZD27C82P-M BZD27C91P-M BZD27C100P-M BZD27C110P-M BZD27C120P-M BZD27C130P-M BZD27C150P-M BZD27C160P-M BZD27C180P-M BZD27C200P-M N8 N9 O0 O1 O2 O3 O4 O5 O6 O7 O8 O9 P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 Q0 Q1 Q2 Q3 Q4 Q5 Q6 Q7 Q8 Q9 R0 R1 R2 7 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 25.1 28 31 34 37 40 44 48 52 58 64 70 77 85 94 104 114 124 138 153 168 188 VZ at IZT1 V NOM. 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 130 150 160 180 200 Notes • Electrical characteristics when used as protection diodes (1) Non-repetitive peak reverse current in accordance with ”IEC 60-1, section 8” (10/1000 μs pulse); see fig. 5. Rev. 1.2, 29-Nov-11 Document Number: 83307 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZD27C3V6P-M to BZD27C200P-M www.vishay.com BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 10 160 140 120 100 80 60 40 20 0 0 50 100 150 200 Vishay Semiconductors Max. VF Typ. VF 1 0.1 0.6 17411 0.8 1.0 1.2 1.4 1.6 17414 PRSM - Max. Pulse Power Dissipation (W) IF - Forward Current (A) VF - Forward Voltage (V) VZnom - Zener Voltage (V) Fig. 1 - Forward Current vs. Forward Voltage Fig. 4 - Maximum Pulse Power Dissipation vs. Zener Voltage 10 000 CD - Typ. Junction Capacitance (pF) C5V1P 1000 C6V8P C12P C18P IRSM (%) 100 90 t1 = 10 µs t2 = 1000 µs 50 100 C27P C200P 10 0 0.5 1.0 1.5 2.0 2.5 3.0 17415 C51P 10 t1 t2 t 17412 VR - Reverse Voltage (V) Fig. 2 - Typ. Diode Capacitance vs. Reverse Voltage Fig. 5 - Non-Repetitive Peak Reverse Current Pulse Definition 3.0 Ptot - Power Dissipation (W) 2.5 2.0 1.5 1.0 0.5 0 17413 Tie point temperature Ambient temperature 0 25 50 75 100 125 150 Tamb - Ambient Temperature (°C) Fig. 3 - Power Dissipation vs. Ambient Temperature Rev. 1.2, 29-Nov-11 Document Number: 83307 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BZD27C3V6P-M to BZD27C200P-M www.vishay.com PACKAGE DIMENSIONS in millimeters (inches): DO219-AB (SMF) Vishay Semiconductors 0.85 (0.033) 0.35 (0.014) 0.25 (0.010) 0.05 (0.002) 0.1 (0.004) 5 1.9 (0.075) 1.7 (0.067) 1.2 (0.047) 0.8 (0.031) 0 (0.000) Detail Z enlarged 1.08 (0.043) 2.9 (0.114) 2.7 (0.106) 3.9 (0.154) 3.5 (0.138) 0.88 (0.035) Foot print recommendation: 1.3 (0.051) 1.3 (0.051) Created - Date: 15. February 2005 Rev. 3 - Date: 13. March 2007 Document no.:S8-V-3915.01-001 (4) 17247 1.4 (0.055) 2.9 (0.114) Rev. 1.2, 29-Nov-11 Document Number: 83307 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 5 BZD27C3V6P-M to BZD27C200P-M www.vishay.com Blistertape Dimensions for SMF in millimeters Vishay Semiconductors PS Document-No.: S8-V-3717.02-001 (3) 18513 Rev. 1.2, 29-Nov-11 Document Number: 83307 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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