BZG04-Series
Vishay Semiconductors
Zener Diodes with Surge Current Specification
Features
• • • • • • • Glass passivated junction High reliability e3 Stand-off Voltage range 8.2 V to 220 V Excellent clamping cabability Fast response time (typ. ≤ 1 ps from 0 to VZmin) Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
15811
Applications
Protection from high voltage, high energy transients
Mechanical Data
Case: DO-214AC Weight: approx. 77 mg Packaging Codes/Options: TR / 1.5 k 7 " reel TR3 / 6 k 13 " reel 6 k/box
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified Parameter Power dissipation Test condition RthJA < 25 K/W, Tamb = 100 °C RthJA < 100 K/W, Tamb = 50 °C Non repetitive peak surge power tp = 10/1000 µs sq.pulse, dissipation Tj = 25 °C prior to surge Peak forward surge current Junction temperature Storage temperature range 10 ms single half sine wave Symbol Pdiss Pdiss PZSM IFSM Tj Tstg Value 3 1.25 300 50 150 - 65 to + 150 Unit W W W A °C °C
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified Parameter Junction lead Junction ambient mounted on epoxy-glass hard tissue, Fig. 1a mounted on epoxy-glass hard tissue, Fig. 1b mounted on Al-oxid-ceramic (Al2O3), Fig. 1b Test condition Symbol RthJL RthJA RthJA RthJA Value 25 150 125 100 Unit K/W K/W K/W K/W
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Document Number 85594 Rev. 2.2, 15-Sep-05 Test condition IF = 0.5 A Symbol VF Min Typ. Max 1.2 Unit V www.vishay.com 1
BZG04-Series
Vishay Semiconductors Electrical Characteristics
Partnumber Standoff Voltage VR IR Breakdown Voltage V(BR) @ IR TKVZ @ IR Clamping Voltage VCL(R) @ IPP %/K typ 50 50 50 50 50 25 25 25 25 25 25 25 25 10 10 10 10 10 10 10 10 10 10 5 5 5 5 5 5 5 5 5 2 2 2 0.05 0.05 0.05 0.05 0.05 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.07 0.07 0.07 0.07 0.08 0.08 0.08 0.08 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 max 0.09 0.1 0.1 0.1 0.1 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.12 0.12 0.12 0.12 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 V *) max 14.8 15.7 17 18.9 20.9 22.9 25.6 28.4 31 33.8 38.1 42.2 46.2 50.1 54.1 60.7 65.5 70.8 78.6 86.5 94.4 103.5 114 126 139 152 167 185 204 224 249 276 305 336 380 20.3 19.1 17.7 15.9 14.4 13.1 11.7 10.6 9.7 8.9 7.9 7.1 6.5 6.0 5.5 4.9 4.6 4.2 3.8 3.5 3.2 2.9 2.6 2.4 2.2 2.0 1.8 1.6 1.5 1.3 1.2 1.1 1.0 0.9 0.8 @ IZT Junction Capacitance Cj @ VR = 0 V, f = 1 MHz pF typ 1200 1100 1000 850 815 785 710 655 610 570 545 505 475 450 420 390 370 350 330 310 291 280 275 260 250 243 170 153 150 145 140 135 131 122 120
V BZG04-8V2 BZG04-9V1 BZG04-10 BZG04-11 BZG04-12 BZG04-13 BZG04-15 BZG04-16 BZG04-18 BZG04-20 BZG04-22 BZG04-24 BZG04-27 BZG04-30 BZG04-33 BZG04-36 BZG04-39 BZG04-43 BZG04-47 BZG04-51 BZG04-56 BZG04-62 BZG04-68 BZG04-75 BZG04-82 BZG04-91 BZG04-100 BZG04-110 BZG04-120 BZG04-130 BZG04-150 BZG04-160 BZG04-180 BZG04-200 BZG04-220
*)
µA max 20 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5
V min 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 25.1 28 31 34 37 40 44 48 52 58 64 70 77 85 94 104 114 124 138 153 168 188 208 228 251
mA
A *)
8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 130 150 160 180 200 220
10/1000 µs pulse
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Document Number 85594 Rev. 2.2, 15-Sep-05
BZG04-Series
Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified)
a) b)
I F – Forward Current (A )
3.0 5.0 2.5 2.0 1.5 1.0 0.5
2.0 1.5 10.0
2.0
25.0
94 9313
1.0 25.0
94 9581
0 0 0.5 1.0 1.5 2.0 V F – Forward Voltage ( V )
Figure 1. Boards for RthJA definition (copper overlay 35µ)
Figure 3. Forward Current vs. Forward Voltage
RthJA–Therm. Resist.Junction/ Ambient ( K/W)
30
PZSM – Non-Repetitive Surge Power Dissipation (W)
40
10000
1000
20 l 10 l
100
0 0 5 10 15
TL= constant 20 25 30
94 9582
10 0.01
0.1
1
10
100
94 9570
l – Lead Length ( mm )
tp – Pulse Length ( ms )
Figure 2. Typ. Thermal Resistance vs. Lead Length
Z thp–Thermal Resistance for Pulse Cond.(K/W
Figure 4. Non Repetitive Surge Power Dissipation vs. Pulse Length
1000
100 tp/T=0.5 10 tp/T=0.2 tp/T=0.1 tp/T=0.05 tp/T=0.02 1 10–5 10–4 10–3
tp/T=0.01 10–2 10–1 100 101 102
94 9583
tp – Pulse Length ( s )
Figure 5. Thermal Response
Document Number 85594 Rev. 2.2, 15-Sep-05
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BZG04-Series
Vishay Semiconductors Package Dimensions in mm (Inches)
19628
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Document Number 85594 Rev. 2.2, 15-Sep-05
BZG04-Series
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85594 Rev. 2.2, 15-Sep-05
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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