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BZT03D9V1

BZT03D9V1

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    BZT03D9V1 - Silicon Z-Diodes and Transient Voltage Suppressors - Vishay Siliconix

  • 数据手册
  • 价格&库存
BZT03D9V1 数据手册
BZT03D... Vishay Telefunken Silicon Z–Diodes and Transient Voltage Suppressors Features D Glass passivated junction D Hermetically sealed package D Clamping time in picoseconds Applications Medium power voltage regulators and medium power transient suppression circuits 94 9539 Absolute Maximum Ratings Tj = 25_C Parameter Power dissipation Repetitive peak reverse power dissipation Non repetitive peak surge power dissipation Junction temperature Storage temperature range Test Conditions l=10mm, TL=25°C Tamb=25°C tp=100ms, Tj=25°C Type Symbol PV PV PZRM PZSM Tj Tstg Value 3.25 1.3 10 600 175 –65...+175 Unit W W W W °C °C Maximum Thermal Resistance Tj = 25_C Parameter Test Conditions Junction ambient l=10mm, TL=constant on PC board with spacing 25mm Symbol RthJA RthJA Value 46 100 Unit K/W K/W Electrical Characteristics Tj = 25_C Parameter Forward voltage Test Conditions IF=0.5A Type Symbol VF Min Typ Max 1.2 Unit V Document Number 85600 Rev. 2, 01-Apr-99 www.vishay.de • FaxBack +1-408-970-5600 1 (5) BZT03D... Vishay Telefunken Type BZT03D... 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 130 150 160 180 200 220 240 270 Min. 5.6 6.1 6.75 7.4 8.2 9.0 9.9 10.8 11.7 13.5 14.4 16.2 18.0 29.8 21.6 24.3 27 29.7 32.4 35.1 38.7 42.3 45.9 50.4 55.8 61.2 67.5 73.8 81.9 90 99 108 117 135 144 162 180 198 216 243 VZ V Typ. 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 130 150 160 180 200 220 240 270 rzj Max. 6.8 7.5 8.25 9.0 10.0 11.0 12.1 13.2 14.3 16.5 17.6 19.8 22.0 24.2 26.4 29.7 33 36.3 39.6 42.9 47.3 51.7 56.1 61.6 68.2 74.8 82.5 90.2 100 110 121 132 143 165 176 198 220 242 264 297 Typ. 1 1 1 1 2 2 4 4 5 5 6 6 6 6 7 7 8 8 21 21 24 24 25 25 25 25 30 30 60 60 80 80 110 130 150 180 200 350 400 450 and Max. 2 2 2 2 4 4 7 7 10 10 15 15 15 15 15 15 15 15 40 40 45 45 60 60 80 80 100 100 200 200 250 250 300 300 350 400 500 750 850 1000 TKVZ at %/K Min. Max. 0 0.07 0 0.07 0 0.07 0.03 0.08 0.03 0.08 0.05 0.09 0.05 0.10 0.05 0.10 0.05 0.10 0.05 0.10 0.06 0.11 0.06 0.11 0.06 0.11 0.06 0.11 0.06 0.11 0.06 0.11 0.06 0.11 0.06 0.11 0.06 0.11 0.06 0.11 0.07 0.12 0.07 0.12 0.07 0.12 0.07 0.12 0.08 0.13 0.08 0.13 0.08 0.13 0.08 0.13 0.09 0.13 0.09 0.13 0.09 0.13 0.09 0.13 0.09 0.13 0.09 0.13 0.09 0.13 0.09 0.13 0.09 0.13 0.09 0.13 0.09 0.13 0.09 0.13 IZ mA 100 100 100 100 50 50 50 50 50 50 25 25 25 25 25 25 25 25 10 10 10 10 10 10 10 10 10 10 5 5 5 5 5 5 5 5 5 2 2 2 IR at mA Max. 1500 1000 750 600 20 10 4 3 2 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 VR W 4.4 4.8 5.3 5.9 6.5 7.1 7.9 8.6 9.3 10.6 11.6 12.6 14.4 15.8 17.2 19.4 21.5 23.5 25.8 28 31 33.5 36.5 40 44.5 49 54 59 65 71 79 86 93 106 116 126 144 158 172 194 www.vishay.de • FaxBack +1-408-970-5600 2 (5) Document Number 85600 Rev. 2, 01-Apr-99 BZT03D... Vishay Telefunken Type BZT03D... 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 130 150 160 180 200 220 240 270 1) Clamping at V(CL)R 1) IRSM V A Max. 9.5 34.0 10.5 31.0 11.6 26.5 12.6 24.4 13.7 22.7 15.2 20.3 16.2 19.1 17.5 17.7 19.1 15.9 21.8 14.4 23.4 13.1 26.3 11.7 29.2 10.6 31.9 9.7 34.6 8.9 39 7.9 43.5 7.1 47.5 6.5 51.5 6.0 56 5.5 62 4.9 67.5 4.6 73 4.2 81 3.8 89 3.5 97 3.2 107 2.9 117 2.6 130 2.4 143 2.2 157 2.0 172 1.8 187 1.6 213 1.5 229 1.3 256 1.2 284 1.1 314 1.0 364 0.9 388 0.8 Stand–off at IR VR 2) mA V Max. 3000 4.8 2000 5.3 1500 5.9 1200 6.5 50 7.1 20 7.9 5 8.6 5 9.3 5 10.6 5 11.6 5 12.6 5 14.4 5 15.8 5 17.2 5 19.4 5 21.5 5 23.5 5 25.8 5 28 5 31 5 33.5 5 36.5 5 40 5 44.5 5 49 5 54 5 59 5 65 5 71 5 79 5 86 5 93 5 106 5 116 5 126 5 144 5 158 5 172 5 194 5 215 10/1000 exp. falling pulse tp = 1000 ms down to 50% Document Number 85600 Rev. 2, 01-Apr-99 www.vishay.de • FaxBack +1-408-970-5600 3 (5) BZT03D... Vishay Telefunken Characteristics (Tj = 25_C unless otherwise specified) 50 3 I F – Forward Current ( A ) 3.0 2.5 2.0 Tj = 25°C 1.5 1.0 0.5 0 7 2 94 9086a 94 9585 25 50 0 0.5 1.0 1.5 2.0 VF – Forward Voltage ( V ) Figure 1. Epoxy glass hard tissue, board thickness 1.5 mm, RthJA 100 K/W x Figure 3. Forward Current vs. Forward Voltage 10000 4 Ptot – Total Power Dissipation ( W ) l=10mm 3 15mm 2 20mm 1 see Fig.1 0 0 94 9584 PZSM – Non-Repetitive Surge Power Dissipation ( W ) l l Tj = 25°C 1000 TL=constant 100 40 80 120 160 200 94 9586 10 0.01 0.1 1 10 100 Tamb – Ambient Temperature ( °C ) tp – Pulse Length ( ms ) Figure 2. Total Power Dissipation vs. Ambient Temperature Figure 4. Non Repetitive Surge Power Dissipation vs. Pulse Length Dimensions in mm ∅ 3.6 max. Sintered Glass Case SOD 57 Weight max. 0.5 g Cathode Identification technical drawings according to DIN specifications 94 9538 ∅ 0.82 max. 26 min. 4.2 max. 26 min. www.vishay.de • FaxBack +1-408-970-5600 4 (5) Document Number 85600 Rev. 2, 01-Apr-99 BZT03D... Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 85600 Rev. 2, 01-Apr-99 www.vishay.de • FaxBack +1-408-970-5600 5 (5)
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