BZW03C68

BZW03-Series Vishay Semiconductors Zener Diodes with Surge Current Specification Features • • • • Glass passivated junction Hermetically sealed package Clamping time in picoseconds Lead (Pb)-free component e2 949588 • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications Voltage regulators and transient suppression circuits Mechanical Data Case: SOD-64 Sintered glass case Weight: approx. 858 mg Packaging Codes/Options: TAP / 2.5 k Ammopack (52 mm tape), 12.5 k/box TR / 2.5 k 10 " reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Power dissipation Repetitive peak reverse power dissipation Non repetitive peak surge power tp = 100 µs, Tj = 25 °C dissipation Junction temperature Storage temperature range Test condition l = 10 mm, TL = 25 °C Tamb = 45 °C Symbol Pdiss Pdiss PZRM PZSM Tj Tstg Value 6.0 1.85 20 1000 175 - 65 to + 175 Unit W W W W °C °C Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Junction ambient Test condition l = 25 mm, TL = constant on PC board with spacing 37.5 mm Symbol RthJA RthJA Value 30 70 Unit K/W K/W Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage IF = 1 A Test condition Symbol VF Min Typ. Max 1.2 Unit V Document Number 85602 Rev. 1.4, 13-Apr-05 www.vishay.com 1 BZW03-Series Vishay Semiconductors Electrical Characteristics BZW03C... Partnumber Zener Voltage Range Dynamic Resistance Test Curre nt V Z @ IZ V min BZW03C6V8 BZW03C7V5 BZW03C8V2 BZW03C9V1 BZW03C10 BZW03C11 BZW03C12 BZW03C13 BZW03C15 BZW03C16 BZW03C18 BZW03C20 BZW03C22 BZW03C24 BZW03C27 BZW03C30 BZW03C33 BZW03C36 BZW03C39 BZW03C43 BZW03C47 BZW03C51 BZW03C56 BZW03C62 BZW03C68 BZW03C75 BZW03C82 BZW03C91 BZW03C100 BZW03C110 BZW03C120 BZW03C130 BZW03C150 BZW03C160 BZW03C180 BZW03C200 BZW03C220 BZW03C240 BZW03C270 1) 2) Temperature Coefficient of Zener Voltage TCVZ @ IZT %/K min max 0.07 0.07 0.08 0.08 0.09 0.1 0.1 0.1 0.1 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.12 0.12 0.12 0.12 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0 0 0.03 0.03 0.05 0.05 0.05 0.05 0.05 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.07 0.07 0.07 0.07 0.08 0.08 0.08 0.08 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 Reverse Leakage Current IR @ V R µA max 2000 1500 1200 40 20 15 10 4 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 130 150 160 180 200 V Clamping Stand off rzj and TKVZ@IZ Ω max 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 28.9 32 35 38 41 46 50 54 60 66 72 79 87 96 106 116 127 141 156 171 191 212 233 256 289 typ 0.7 0.7 0.8 0.9 1 1.1 1.1 1.2 1.2 1.3 1.3 1.5 1.6 1.8 2.5 4 5 6 7 10 12 14 18 20 22 25 30 40 45 65 90 100 150 180 210 250 350 450 600 max 1.5 1.5 1.5 2 2 2.5 2.5 2.5 2.5 2.5 2.5 3 3.5 3.5 5 8 10 11 14 20 25 27 35 42 44 45 65 75 90 125 170 190 330 350 430 500 700 900 1200 IZ mA 175 175 150 150 125 125 100 100 75 75 65 65 50 50 50 40 40 30 30 30 25 25 20 20 20 20 15 15 12 12 10 10 8 8 5 5 5 5 5 V(CL)R1) @ IRMS V max 10.3 11.3 12.3 13.3 14.8 15.7 17.0 18.9 20.9 22.9 25.6 28.4 31.0 33.8 38.1 42.2 46.2 50.1 54.1 60.7 65.5 70.8 78.6 86.5 94.4 103.5 114 126 139 152 167 185 204 224 249 276 305 336 380 48.5 44.2 40.6 37.6 34 31.8 29.4 26.4 23.9 21.8 19.5 17.6 16.1 14.8 13.1 11.8 10.8 10 9.2 8.2 7.6 7.0 6.3 5.8 5.3 4.8 4.3 3.9 3.6 3.3 3.0 2.7 2.4 2.2 2.0 1.8 1.6 1.5 1.3 A IR @ VR2) µA max 4000 3000 2400 100 40 30 20 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 130 150 160 180 200 220 V typ 6.8 7.5 8.2 9.1 10 11 12 14 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 130 150 160 180 200 220 240 270 6.4 7.0 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 25.1 28 31 34 37 40 44 48 52 58 64 70 77 85 94 104 114 124 138 153 168 188 208 228 251 Exp. falling pulse, tp = 500 µs down to 37 % Stand-off reverse voltage = recommended supply voltage www.vishay.com 2 Document Number 85602 Rev. 1.4, 13-Apr-05 BZW03-Series Vishay Semiconductors Electrical Characteristics BZW03D... Partnumber Zener Voltage Range Dynamic Resistance Test Curre nt V Z @ IZ V min BZW03D6V8 BZW03D7V5 BZW03D8V2 BZW03D9V1 BZW03D10 BZW03D11 BZW03D12 BZW03D13 BZW03D15 BZW03D16 BZW03D18 BZW03D20 BZW03D22 BZW03D24 BZW03D27 BZW03D30 BZW03D33 BZW03D36 BZW03D39 BZW03D43 BZW03D47 BZW03D51 BZW03D56 BZW03D62 BZW03D68 BZW03D75 BZW03D82 BZW03D91 BZW03D100 BZW03D110 BZW03D120 BZW03D130 BZW03D150 BZW03D160 BZW03D180 BZW03D200 BZW03D220 BZW03D240 BZW03D270 1) 2) Temperature Coefficient of Zener Voltage @ IZT, TCVZ %/K min max 0.07 0.07 0.08 0.08 0.09 0.1 0.1 0.1 0.1 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.11 0.12 0.12 0.12 0.12 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0.13 0 0 0.03 0.03 0.05 0.05 0.05 0.05 0.05 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.06 0.07 0.07 0.07 0.07 0.08 0.08 0.08 0.08 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 0.09 Reverse Leakage Current IR @ V R µA max 2000 1500 1200 40 20 15 10 4 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 4.8 5.3 5.8 6.5 7.1 7.9 8.6 9.3 10.6 11.6 12.6 14.4 15.8 17.2 19.4 21.5 23.5 25.8 28 31 33.5 36.5 40 44.5 49 54 59 65 71 79 86 93 106 116 126 144 158 172 194 V Clamping Stand off rzj and TKVZ@IZ Ω max 7.5 8.25 9 10 11 12.1 13.2 14.3 16.5 17.6 19.8 22 24.2 26.4 29.7 33 36.3 39.6 42.9 47.3 51.7 56.1 61.6 68.2 74.8 82.5 90.2 100 110 121 132 143 165 176 198 220 242 264 297 typ 0.7 0.7 0.8 0.9 1 1.1 1.1 1.2 1.2 1.3 1.3 1.5 1.6 1.8 2.5 4 5 6 7 10 12 14 18 20 22 25 30 40 45 65 90 100 150 180 210 250 350 450 600 typ 1.5 1.5 1.5 2 2 2.5 2.5 2.5 2.5 2.5 2.5 3 3.5 3.5 5 8 10 11 14 20 25 27 35 42 44 45 65 75 90 125 170 190 330 350 430 500 700 900 1200 IZT mA 175 175 150 150 125 125 100 100 75 75 65 65 50 50 50 40 40 30 30 30 25 25 20 20 20 20 15 15 12 12 10 10 8 8 5 5 5 5 5 V(CL)R1) @ IRMS V max 10.6 11.7 12.6 13.6 15.2 16.2 17.5 19.1 21.8 23.4 26.3 29.2 32 34.6 39 43.2 47 51.7 56 62 66.7 73 80.2 88.7 97.2 107 117 130 143 157 172 187 213 229 256 284 314 344 388 48.5 44.2 40.6 37.6 34 31.8 29.4 26.4 23.9 21.8 19.5 17.6 16.1 14.8 13.1 11.8 10.8 10 9.2 8.2 7.6 7.0 6.3 5.8 5.3 4.8 4.3 3.9 3.6 3.3 3.0 2.7 2.4 2.2 2.0 1.8 1.6 1.5 1.3 A IR @ VR 2) µA max 4000 3000 2400 100 40 30 20 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 5.3 5.8 6.5 7.1 7.9 8.6 9.3 10.6 11.6 12.6 14.4 15.8 17.2 19.4 21.5 23.5 25.8 28 31 33.5 36.5 40 44.5 49 54 59 65 71 79 86 93 106 116 126 144 158 172 194 215 V typ 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 130 150 160 180 200 220 240 270 6.1 6.75 7.4 8.2 9 9.9 10.8 11.7 13.5 14.4 16.2 18 20.8 21.6 24.3 27 29.7 32.4 25.1 38.7 42.3 45.9 50.4 55.8 61.2 67.5 73.8 81.9 90 99 108 117 135 144 162 180 198 216 243 Exp. falling pulse, tp = 500 µs down to 37 % Stand-off reverse voltage = recommended supply voltage Document Number 85602 Rev. 1.4, 13-Apr-05 www.vishay.com 3 BZW03-Series Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) 50 3 I F – Forward Current ( A ) 6 5 4 Tj =25°C 3 2 1 0 37.5 50 7 2 94 9087 95 9609 0 0.5 1.0 1.5 2.0 V F – Forward Voltage ( V ) Figure 1. Epoxy Glass Hard Tissue, Board Thickness 1.5 mm, RthJA≤70 K/W PZSM – Non-Repetitive Surge Power Dissipation (W ) Figure 3. Forward Current vs. Forward Voltage 8 Ptot –Total Power Dissipation ( W ) 10000 l l=10mm 6 15mm 4 20mm 2 see Fig.1 0 0 40 80 120 l tp 1000 TL=constant 100 Tj =25°C 10 0.01 0.1 1 10 100 160 200 95 9610 95 9608 Tamb – Ambient Temperature ( °C ) tp – Pulse Length ( ms ) Figure 2. Total Power Dissipation vs. Ambient Temperature Figure 4. Non Repetitive Surge Power Dissipation vs. Pulse Length Package Dimensions in mm (Inches) Sintered Glass Case SOD-64 Cathode Identification 4.3 (0.168) max. ISO Method E 1.35 (0.053) max. 26(1.014) min. 4.0 (0.156) max. 26 (1.014) min. 94 9587 www.vishay.com 4 Document Number 85602 Rev. 1.4, 13-Apr-05 BZW03-Series Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 85602 Rev. 1.4, 13-Apr-05 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1