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BZX84C3V3-V

BZX84C3V3-V

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    BZX84C3V3-V - Small Signal Zener Diodes - Vishay Siliconix

  • 数据手册
  • 价格&库存
BZX84C3V3-V 数据手册
BZX84-V-Series Vishay Semiconductors Small Signal Zener Diodes Features • These diodes are also available in other case styles and other configurations including: the SOD-123 case with type e3 designation BZT52 series, the dual zener diode common anode configuration in the SOT-23 case with type designation AZ23 series and the dual zener diode common cathode configuration in the SOT-23 case with type designation DZ23 series. • The Zener voltages are graded according to the international E 24 standard. Standard Zener voltage tolerance is ± 5 %. Replace "C" with "B" for ± 2 % tolerance. • Silicon Planar Power Zener Diodes • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 1 2 18078 Mechanical Data Case: SOT-23 Plastic case Weight: approx. 8.8 mg Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Power dissipation 1) Test condition Symbol Ptot Value 300 1) Unit mW Device on fiberglass substrate, see layout. Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Thermal resistance junction to ambient air Junction temperature Storage temperature range 1) Test condition Symbol RthJA Tj TS Value 420 1) 150 - 65 to + 150 Unit °C/W °C °C Device on fiberglass substrate, see layout. Document Number 85763 Rev. 1.7, 14-Jul-05 www.vishay.com 1 BZX84-V-Series Vishay Semiconductors Electrical Characteristics Partnumber Marking Code Zener Voltage Range VZ @ IZT1 V min BZX84C2V4-V BZX84C2V7-V BZX84C3V0-V BZX84C3V3-V BZX84C3V6-V BZX84C3V9-V BZX84C4V3-V BZX84C4V7-V BZX84C5V1-V BZX84C5V6-V BZX84C6V2-V BZX84C6V8-V BZX84C7V5-V BZX84C8V2-V BZX84C9V1-V BZX84C10-V BZX84C11-V BZX84C12-V BZX84C13-V BZX84C15-V BZX84C16-V BZX84C18-V BZX84C20-V BZX84C22-V BZX84C24-V BZX84C27-V BZX84C30-V BZX84C33-V BZX84C36-V BZX84C39-V BZX84C43-V BZX84C47-V BZX84C51-V BZX84C56-V BZX84C62-V BZX84C68-V BZX84C75-V Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Y1 Y2 Y3 Y4 Y5 Y6 Y7 Y8 Y9 Y10 Y11 Y12 Y13 Y14 Y15 Y16 Y17 Y18 Y19 Y20 Y21 2.2 2.5 2.8 3.1 3.4 3.7 4 4.4 4.8 5.2 5.8 6.4 7 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 25.1 28 31 34 37 40 44 48 52 58 64 70 max 2.6 2.9 3.2 3.5 3.8 4.1 4.6 5 5.4 6 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 28.9 32 35 38 41 46 50 54 60 66 72 79 70 (≤100) 75 (≤100) 80 (≤95) 85 (≤95) 85 (≤90) 85 (≤90) 80 (≤90) 50 (≤80) 40 (≤60) 15 (≤40) 6.0 (≤10) 6.0 (≤15) 6.0 (≤15) 6.0 (≤15) 6.0 (≤15) 8.0 (≤20) 10 (≤20) 10 (≤25) 10 (≤30) 10 (≤30) 10 (≤40) 10 (≤45) 15 (≤55) 20 (≤55) 25 (≤70) 25 (≤80) 30 (≤80) 35 (≤80) 35 (≤90) 40 (≤130) 45 (≤150) 50 (≤170) 60 (≤180) 70 (≤200) 80 (≤215) 90 (≤240) 95 (≤255) 275 300 (≤600) 325 (≤600) 350 (≤600) 375 (≤600) 400 (≤600) 410 (≤600) 425 (≤500) 400 (≤480) 80 (≤400) 40 (≤150) 30 (≤80) 30 (≤80) 40 (≤80) 40 (≤100) 50 (≤150) 50 (≤150) 50 (≤150) 50 (≤170) 50 (≤200) 50 (≤200) 50 (≤225) 60 (≤225) 60 (≤250) 60 (≤250) 65 (≤300) 70 (≤300) 75 (≤325) 80 (≤350) 80 (≤350) 85 (≤375) 85 (≤375) 85 (≤400) 100 (≤425) 100 (≤450) 150 (≤475) 170 (≤500) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2 2 2 2 2 2 2 2 2 2 2 2 Dynamic Resistance Test Current Temp. Coefficient of Zener Voltage αVZ @ IZT1 10-4/°C min -9.0 -9.0 -9.0 -8.0 -8.0 -7.0 -6.0 -5.0 -3.0 -2.0 -1.0 +2.0 +3.0 +4.0 +5.0 +5.0 +5.0 +6.0 +7.0 +7.0 +8.0 +8.0 +8.0 +8.0 +8.0 +8.0 +8.0 +8.0 +8.0 +10 +10 +10 +10 +9.0 +9.0 +10 +10 max -4.0 -4.0 -3.0 -3.0 -3.0 -3.0 -1.0 +2.0 +4.0 +6.0 +7.0 +7.0 +7.0 +7.0 +8.0 +8.0 +9.0 +9.0 +9.0 +9.0 +9.5 +9.5 +10 +10 +10 +10 +10 +10 +10 +12 +12 +12 +12 +11 +12 +12 +12 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 50 20 10 5 5 3 3 3 2 1 3 2 1 0.7 0.5 0.2 0.1 0.1 0.1 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 1 1 1 1 1 1 1 2 2 2 4 4 5 5 6 7 8 8 8 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. Test Current Reverse Leakage Current rzj @ IZT1 Ω rzj @ IZT2 IZT1 mA IZT2 mA IR µA @ VR V www.vishay.com 2 Document Number 85763 Rev. 1.7, 14-Jul-05 BZX84-V-Series Vishay Semiconductors Electrical Characteristics Partnumber Marking Code Zener Voltage Range VZ @ IZT1 V min BZX84B2V4-V BZX84B2V7-V BZX84B3V0-V BZX84B3V3-V BZX84B3V6-V BZX84B3V9-V BZX84B4V3-V BZX84B4V7-V BZX84B5V1-V BZX84B5V6-V BZX84B6V2-V BZX84B6V8-V BZX84B7V5-V BZX84B8V2-V BZX84B9V1-V BZX84B10-V BZX84B11-V BZX84B12-V BZX84B13-V BZX84B15-V BZX84B16-V BZX84B18-V BZX84B20-V BZX84B22-V BZX84B24-V BZX84B27-V BZX84B30-V BZX84B33-V BZX84B36-V BZX84B39-V BZX84B43-V BZX84B47-V BZX84B51-V BZX84B56-V BZX84B62-V BZX84B68-V BZX84B75-V Z50 Z51 Z52 Z53 Z54 Z55 Z56 Z57 Z58 Z59 Z60 Z61 Z62 Z63 Z64 Z65 Z66 Z67 Z68 Z69 Z70 Z71 Z72 Z73 Z74 Z75 Z76 Z77 Z78 Z79 Z80 Z81 Z82 Z83 Z84 Z85 Z86 2.35 2.65 2.94 3.23 3.53 3.82 4.21 4.61 5 5.49 6.08 6.66 7.35 8.04 8.92 9.8 10.8 11.8 12.7 14.7 15.7 17.6 19.6 21.6 23.5 26.5 29.4 32.3 35.3 38.2 42.1 46.1 50 54.9 60.8 66.6 73.5 max 2.45 2.75 3.06 3.37 3.67 3.98 4.39 4.79 5.2 5.71 6.32 6.94 7.65 8.36 9.28 10.2 11.2 12.2 13.3 15.3 16.3 18.4 20.4 22.4 24.5 27.5 30.6 33.7 36.7 39.8 43.9 47.9 52 57.1 63.2 69.4 76.5 70 (≤100) 75 (≤100) 80 (≤95) 85 (≤95) 85 (≤90) 85 (≤90) 80 (≤90) 50 (≤80) 40 (≤60) 15 (≤40) 6.0 (≤10) 6.0 (≤15) 6.0 (≤15) 6.0 (≤15) 6.0 (≤15) 8.0 (≤20) 10 (≤20) 10 (≤25) 10 (≤30) 10 (≤30) 10 (≤40) 10 (≤45) 15 (≤55) 20 (≤55) 25 (≤70) 25 (≤80) 30 (≤80) 35 (≤80) 35 (≤90) 40 (≤130) 45 (≤150) 50 (≤170) 60 (≤180) 70 (≤200) 80 (≤215) 90 (≤240) 95 (≤255) 275 300 (≤600) 325 (≤600) 350 (≤600) 375 (≤600) 400 (≤600) 410 (≤600) 425 (≤500) 400 (≤480) 80 (≤400) 40 (≤150) 30 (≤80) 30 (≤80) 40 (≤80) 40 (≤100) 50 (≤150) 50 (≤150) 50 (≤150) 50 (≤170) 50 (≤200) 50 (≤200) 50 (≤225) 60 (≤225) 60 (≤250) 60 (≤250) 65 (≤300) 70 (≤300) 75 (≤325) 80 (≤350) 80 (≤350) 85 (≤375) 85 (≤375) 85 (≤400) 100 (≤425) 100 (≤450) 150 (≤475) 170 (≤500) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2 2 2 2 2 2 2 2 2 2 2 2 Dynamic Resistance Test Current Temp. Coefficient of Zener Voltage αVZ @ IZT1 10-4/°C min -9 -9 -9 -8 -8 -7 -6 -5 -3 -2 -1 2 3 4 5 5 5 6 7 7 8 8 8 8 8 8 8 8 8 10 10 10 10 9 9 10 10 max -4 -4 -3 -3 -3 -3 -1 2 4 6 7 7 7 7 8 8 9 9 9 9 9.5 9.5 10 10 10 10 10 10 10 12 12 12 12 11 12 12 12 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 50 20 10 5 5 3 3 3 2 1 3 2 1 0.7 0.5 0.2 0.1 0.1 0.1 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 1 1 1 1 1 1 1 2 2 2 4 4 5 5 6 7 8 8 8 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. 0.7 VZnom. Test Current Reverse Leakage Current rzj @ IZT1 Ω rzj @ IZT2 IZT1 mA IZT2 mA IR µA @ VR V Document Number 85763 Rev. 1.7, 14-Jul-05 www.vishay.com 3 BZX84-V-Series Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) 18114 18117 Figure 1. Forward characteristics Figure 4. Dynamic Resistance vs. Zener Current 18115 18118 Figure 2. Admissible Power Dissipation vs. Ambient Temperature Figure 5. Capacitance vs. Zener Voltage °C 18116 18119 Figure 3. Pulse Thermal Resistance vs. Pulse Duration Figure 6. Dynamic Resistance vs. Zener Current www.vishay.com 4 Document Number 85763 Rev. 1.7, 14-Jul-05 BZX84-V-Series Vishay Semiconductors °C 18120 18135 ,= Figure 7. Dynamic Resistance vs. Zener Current Figure 10. Temperature Dependence of Zener Voltage vs. Zener Voltage °C/W 18121 18124 Figure 8. Thermal Differential Resistance vs. Zener Voltage Figure 11. Change of Zener Voltage vs. Junction Temperature °C 18122 18136 Figure 9. Dynamic Resistance vs. Zener Voltage Figure 12. Temperature Dependence of Zener Voltage vs. Zener Voltage Document Number 85763 Rev. 1.7, 14-Jul-05 www.vishay.com 5 BZX84-V-Series Vishay Semiconductors 18126 Figure 13. Change of Zener Voltage vs. Junction Temperature 18137 Figure 14. Change of Zener voltage from turn-on up to the point of thermal equilibrium vs. Zener voltage 18138 Figure 15. Change of Zener voltage from turn-on up to the point of thermal equilibrium vs. Zener voltage www.vishay.com 6 Document Number 85763 Rev. 1.7, 14-Jul-05 BZX84-V-Series Vishay Semiconductors 18111 Figure 16. Breakdown Characteristics 18112 Figure 17. Breakdown Characteristics Document Number 85763 Rev. 1.7, 14-Jul-05 www.vishay.com 7 BZX84-V-Series Vishay Semiconductors 18113 Figure 18. Breakdown Characteristics Layout for RTheta;JA test Thickness: Fiberglass 0.059 in. (1.5 mm) Copper leads 0.012 in. (0.3 mm) 7.5 (0.3) 3 (0.12) 1 (0.4) 12 (0.47) 15 (0.59) 0.8 (0.03) 2 (0.8) 1 (0.4) 2 (0.8) 5 (0.2) 1.5 (0.06) 5.1 (0.2) 17451 www.vishay.com 8 Document Number 85763 Rev. 1.7, 14-Jul-05 BZX84-V-Series Vishay Semiconductors Package Dimensions in mm (Inches) 1.15 (.045) 2.6 (.102) 2.35 (.092) ISO Method E 0.175 (.007) 0.098 (.005) 0.1 (.004) max. 0.4 (.016) 0.4 (.016) 3.1 (.122) 2.8 (.110) 0.4 (.016) Mounting Pad Layout 0.52 (0.020) 0.9 (0.035) 1.43 (.056) 1.20(.047) 2.0 (0.079) 0.95 (.037) 0.95 (.037) 0.95 (0.037) 0.95 (0.037) 17418 Document Number 85763 Rev. 1.7, 14-Jul-05 0.95 (.037) www.vishay.com 9 BZX84-V-Series Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 10 Document Number 85763 Rev. 1.7, 14-Jul-05
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